Manufacturer | Toshiba Semiconductor and Storage |
Packaging | Tape & Reel TR |
Series | |
Part Status | Active |
FET Type | N Channel |
Voltage - Breakdown (V(BR)GSS) | |
Drain to Source Voltage (Vdss) | |
Current - Drain (Idss) @ Vds (Vgs=0) | 6mA @ 10V |
Current Drain (Id) - Max | |
Voltage - Cutoff (VGS off) @ Id | 200mV @ 100nA |
Input Capacitance (Ciss) (Max) @ Vds | 13pF @ 10V |
Resistance - RDS(On) | |
Power - Max | 200mW |
Operating Temperature | 125°C TJ |
Mounting Type | Surface Mount |
Package / Case | 5 TSSOP, SC 70 5, SOT 353 |
Supplier Device Package | USV |
Standard Package | 3,000 |
MOSFET JFET N-CH
JFET N-CH 40V 350MW SOT23
JFET N CH 40V 80MA TO 18
JFET N-CH 40V 400MW TO92-3
JFET N-CH 25V 350MW SSOT3
JFET N-CH 30V 0.3W TO-206AF
JFET N-CH 10MA 200MW MINI-3
JFET N-CH 30V 20MA SOT-23
JFET N-CH 50V 0.1W TO92
JFET N-CH 35V 0.35W TO92
JFET P-CH 30V 0.3W SOT23
JFET P-CH 40V 0.35W TO92