Online Electronic Components
Easy Board 
Development Board 
GSM / 3G / LTE / IoT Module 
GNSS Module 
Short Range Module 
GPS / GSM / 3G / Wifi / ISM Antenna 
Memory & Data Acquisition IC 
Clock/Timing & Linear IC 
Power Management IC 
Digital Logic IC 
Interface IC 
Embedded MCU 
Discrete Semiconductor 
Resistors 
Potentiometers, Variable Resistors 
Capacitors 
Optoelectronics 
Crystals, Oscillators, Resonators 
| Manufacturer | Toshiba Semiconductor and Storage |
| Packaging | Tape & Reel TR |
| Series | DTMOSIV |
| Part Status | Active |
| FET Type | N Channel |
| Technology | MOSFET Metal Oxide |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A Ta |
| Drive Voltage (Max Rds On, Min Rds On) | |
| Vgs(th) (Max) @ Id | 3.7V @ 600µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 300V |
| Vgs (Max) | |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 100W Tc |
| Rds On (Max) @ Id, Vgs | 340 mOhm @ 5.8A, 10V |
| Operating Temperature | 150°C TJ |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package / Case | TO 252 3, DPak 2 Leads + Tab , SC 63 |
| Standard Package | 2,000 |
MOSFET N-CH 600V 11A D2PAK
MOSFET N-CH 20V 2.4A MICRO8
MOSFET P-CH 30V 8A 6-TSOP
MOSFET N-CH 30V 50A POLARPAK
MOSFET N-CH 100V 75A TO-220AB
MOSFET N-CH 300V 350MA SC73
MOSFET N-CH 100V 1A SOT-89
MOSFET N-CH 25V 90A TO252-3-11
MOSFET N-CH 100V 1.67A SOT223
MOSFET N-CH 30V 90A TO252-3
MOSFET N-CH 40V 100A TO220AB
MOSFET NCH 135V 129A TO220
English
Vietnam
