Manufacturer | Infineon Technologies |
Packaging | Cut Tape (CT) |
Series | HEXFET® |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 14V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 600mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 125nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 8075pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 12 mOhm @ 11A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Standard Package | 1 |
MOSFET N-CH 600V 11A D2PAK
MOSFET N-CH 20V 2.4A MICRO8
MOSFET P-CH 30V 8A 6-TSOP
MOSFET N-CH 30V 50A POLARPAK
MOSFET N-CH 100V 75A TO-220AB
MOSFET N-CH 300V 350MA SC73
MOSFET N-CH 100V 1A SOT-89
MOSFET N-CH 25V 90A TO252-3-11
MOSFET N-CH 100V 1.67A SOT223
MOSFET N-CH 30V 90A TO252-3
MOSFET N-CH 40V 100A TO220AB
MOSFET NCH 135V 129A TO220