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| Manufacturer | Honeywell Microelectronics & Precision Sensors |
| Packaging | Tube |
| Series | HTMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 28V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tj) |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 100mA, 5V |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 8-CDIP-EP |
| Package / Case | 8-CDIP Exposed Pad |
| Standard Package | 1 |
MOSFET N-CH 600V 11A D2PAK
MOSFET N-CH 20V 2.4A MICRO8
MOSFET P-CH 30V 8A 6-TSOP
MOSFET N-CH 30V 50A POLARPAK
MOSFET N-CH 100V 75A TO-220AB
MOSFET N-CH 300V 350MA SC73
MOSFET N-CH 100V 1A SOT-89
MOSFET N-CH 25V 90A TO252-3-11
MOSFET N-CH 100V 1.67A SOT223
MOSFET N-CH 30V 90A TO252-3
MOSFET N-CH 40V 100A TO220AB
MOSFET NCH 135V 129A TO220
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