Manufacturer | Infineon Technologies |
Packaging | Tube |
Series | HEXFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 116A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 3290pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 180W (Tc) |
Rds On (Max) @ Id, Vgs | 7 mOhm @ 60A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Standard Package | 50 |
MOSFET N-CH 600V 11A D2PAK
MOSFET N-CH 20V 2.4A MICRO8
MOSFET P-CH 30V 8A 6-TSOP
MOSFET N-CH 30V 50A POLARPAK
MOSFET N-CH 100V 75A TO-220AB
MOSFET N-CH 300V 350MA SC73
MOSFET N-CH 100V 1A SOT-89
MOSFET N-CH 25V 90A TO252-3-11
MOSFET N-CH 100V 1.67A SOT223
MOSFET N-CH 30V 90A TO252-3
MOSFET N-CH 40V 100A TO220AB
MOSFET NCH 135V 129A TO220