ManufacturerPackagingSeriesPart StatusFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsVgs (Max)FET FeaturePower Dissipation (Max)Rds On (Max) @ Id, VgsOperating TemperatureMounting TypeSupplier Device PackagePackage / Case
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
Technology
Drain to Source Voltage ...
Current - Continuous ...
Drive Voltage (Max ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Vgs (Max)
FET Feature
Power Dissipation ...
Rds On (Max) @ Id, ...
Operating Temperature ...
Mounting Type
Supplier Device Package ...
Package / Case
IPB80P03P405ATMA1
IPB80P03P405ATMA1
1000+0.859471
Increments of 1000
11DESS-HZ-O0MOSFET P-CH 30V 80A TO263-3Tape & Reel TR OptiMOS™ActiveP-ChannelMOSFET Metal Oxide 30V80A Tc -4V @ 253µA130nC @ 10V10300pF @ 25V--137W Tc 4.7 mOhm @ 80A, 10V-55°C ~ 175°C TJ Surface MountPG-TO263-3-2TO-263-3, D²Pak 2 Leads + Tab , TO-263AB
APTM120DA30T1G
APTM120DA30T1G
100+38.2761
Increments of 100
55BDQD-QAFS-M6MOSFET N-CH 1200V 31A SP1Bulk-ActiveN-ChannelMOSFET Metal Oxide 1200V 1.2kV 31A-5V @ 2.5mA560nC @ 10V14560pF @ 25V--657W Tc 360 mOhm @ 25A, 10V-40°C ~ 150°C TJ Chassis MountSP1SP1
IPD80R2K8CEBTMA1
IPD80R2K8CEBTMA1
Leadtime
2-3 weeks
B7-5W-A4MOSFET N-CH 800V 1.9A TO252-3Tape & Reel TR CoolMOS™0N-ChannelMOSFET Metal Oxide 800V1.9A Tc -3.9V @ 120µA12nC @ 10V290pF @ 100V--42W Tc 2.8 Ohm @ 1.1A, 10V-55°C ~ 150°C TJ Surface MountTO-252-3TO-252-3, DPak 2 Leads + Tab , SC-63
VN4012L-G
VN4012L-G
1+1.4902
25+1.24196
100+1.13098
Increments of 1
33W7C-E8I-FNPMOSFET N-CH 400V 0.16A TO92-3Bulk-ActiveN-ChannelMOSFET Metal Oxide 400V160mA Tj 4.5V1.8V @ 1mA-110pF @ 25V±20V-1W Tc 12 Ohm @ 100mA, 4.5V-55°C ~ 150°C TJ Through HoleTO-92-3TO-226-3, TO-92-3 TO-226AA
IXTH96P085T
IXTH96P085T
1+6.28431
10+5.61078
25+5.04941
100+4.60049
250+4.15161
Increments of 1
Leadtime
2-3 weeks
Q477K-8GL3-1XMOSFET P-CH 85V 96A TO-247TubeTrenchP™ActiveP-ChannelMOSFET Metal Oxide 85V96A Tc 10V4V @ 250µA180nC @ 10V13100pF @ 25V±15V-298W Tc 13 mOhm @ 500mA, 10V-55°C ~ 150°C TJ Through HoleTO-247 IXTH TO-247-3
IRF634STRR
IRF634STRR
Leadtime
2-3 weeks
UU-85X-NG4MOSFET N-CH 250V 8.1A D2PAKTape & Reel TR -ObsoleteN-ChannelMOSFET Metal Oxide 250V8.1A Tc -4V @ 250µA41nC @ 10V770pF @ 25V--3.1W Ta , 74W Tc 450 mOhm @ 5.1A, 10V-55°C ~ 150°C TJ Surface MountD2PAKTO-263-3, D²Pak 2 Leads + Tab , TO-263AB
SIA413DJ-T1-GE3-Cut
SIA413DJ-T1-GE3
1+0.941176
10+0.844118
25+0.801569
100+0.658431
250+0.61549
Increments of 1
22WSU-EU83-KAQMOSFET P-CH 12V 12A SC70-6Cut Tape CT TrenchFET®ActiveP-ChannelMOSFET Metal Oxide 12V12A Tc 1.8V, 4.5V1V @ 250µA57nC @ 8V1800pF @ 10V--3.5W Ta , 19W Tc 29 mOhm @ 6.7A, 4.5V-55°C ~ 150°C TJ Surface MountPowerPAK® SC-70-6 SinglePowerPAK® SC-70-6
GP1M006A065FH
GP1M006A065FH
2000+0.672549
Increments of 2000
Leadtime
2-3 weeks
KJJ-B60-DGHMOSFET N-CH 650V 5.5A TO220FTube-ActiveN-ChannelMOSFET Metal Oxide 650V5.5A Tc -4V @ 250µA17nC @ 10V1177pF @ 25V--39W Tc 1.6 Ohm @ 2.75A, 10V-55°C ~ 150°C TJ Through HoleTO-220FTO-220-3 Full Pack
IXTK5N250
IXTK5N250
1+83.402
10+78.3431
25+74.8055
Increments of 1
1919O6-8RM-47DMOSFET N-CH 2500V 5A TO264Tube-ActiveN-ChannelMOSFET Metal Oxide 2500V 2.5kV 5A Tc 10V5V @ 1mA200nC @ 10V8560pF @ 25V±30V-960W Tc 8.8 Ohm @ 2.5A, 10V-55°C ~ 150°C TJ Through HoleTO-264 IXTK TO-264-3, TO-264AA
IXTA76N25T
IXTA76N25T
50+3.61333
Increments of 50
77H-KF-T3MOSFET N-CH 250V 76A TO-263Tube-ActiveN-ChannelMOSFET Metal Oxide 250V76A Tc -5V @ 1mA92nC @ 10V4500pF @ 25V--460W Tc 39 mOhm @ 500mA, 10V-55°C ~ 150°C TJ Surface MountTO-263 IXTA TO-263-3, D²Pak 2 Leads + Tab , TO-263AB
BSC042N03LSGATMA1
BSC042N03LSGATMA1
5000+0.34502
10000+0.332049
Increments of 5000
Leadtime
2-3 weeks
JT7-70Y-LQNMOSFET N-CH 30V 93A TDSON-8Tape & Reel TR OptiMOS™ActiveN-ChannelMOSFET Metal Oxide 30V20A Ta , 93A Tc 4.5V, 10V2.2V @ 250µA42nC @ 10V3500pF @ 15V±20V-2.5W Ta , 57W Tc 4.2 mOhm @ 30A, 10V-55°C ~ 150°C TJ Surface MountPG-TDSON-88-PowerTDFN
DMP2215L-7
DMP2215L-7
3000+0.101912
6000+0.0957353
15000+0.0895588
30000+0.0821471
Increments of 3000
99MF87-54-L0CMOSFET P-CH 20V 2.7A SOT23-3Tape & Reel TR -ActiveP-ChannelMOSFET Metal Oxide 20V2.7A Ta 2.5V, 4.5V1.25V @ 250µA5.3nC @ 4.5V250pF @ 10V±12V-1.08W Ta 100 mOhm @ 2.7A, 4.5V-55°C ~ 150°C TJ Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
FDD5N50FTF_WS
FDD5N50FTF_WS
Leadtime
2-3 weeks
C4KLC-VMGT-EXMOSFET N-CH 500V 3.5A DPAKTape & Reel TR UniFET™ObsoleteN-ChannelMOSFET Metal Oxide 500V3.5A Tc -5V @ 250µA15nC @ 10V650pF @ 25V--40W Tc 1.55 Ohm @ 1.75A, 10V-55°C ~ 150°C TJ Surface MountD-PakTO-252-3, DPak 2 Leads + Tab , SC-63
IPP120N20NFDAKSA1
IPP120N20NFDAKSA1
1+6.0098
10+5.40098
100+4.4252
500+3.7671
1000+3.17708
Increments of 1
Leadtime
2-3 weeks
MWXG-6SQ-HTMOSFET N-CH 200V 84A TO220TubeOptiMOS™ActiveN-ChannelMOSFET Metal Oxide 200V84A Tc 10V4V @ 270µA87nC @ 10V6650pF @ 100V±20V-300W Tc 12 mOhm @ 84A, 10V-55°C ~ 175°C TJ Through HolePG-TO-220-3TO-220-3
IPN50R650CEATMA1
IPN50R650CEATMA1
3000+0.226745
Increments of 3000
Leadtime
2-3 weeks
AOX-X5W-OIZCONSUMER-*Active----------------
PSMN070-200P,127
PSMN070-200P,127
1+2.79412
10+2.5098
100+2.01725
500+1.65735
1000+1.37324
Increments of 1
Leadtime
2-3 weeks
O3-V0Q-97MOSFET N-CH 200V 35A TO220ABTubeTrenchMOS™ActiveN-ChannelMOSFET Metal Oxide 200V35A Tc 10V4V @ 1mA77nC @ 10V4570pF @ 25V±20V-250W Tc 70 mOhm @ 17A, 10V-55°C ~ 175°C TJ Through HoleTO-220ABTO-220-3
SIHB24N65EF-GE3
SIHB24N65EF-GE3
1+5.89216
10+5.29216
25+5.00314
100+4.33588
250+4.11353
Increments of 1
Leadtime
2-3 weeks
WKM6-4XCU-9B0MOSFET FAST BODY DIODE N-CHAN D2-EActiveN-ChannelMOSFET Metal Oxide 650V24A Tc 10V4V @ 250µA122nC @ 10V2774pF @ 100V±30V-250W Tc 156 mOhm @ 12A, 10V-55°C ~ 150°C TJ Surface MountTO-263 D²Pak TO-263-3, D²Pak 2 Leads + Tab , TO-263AB
FQPF7N10L
FQPF7N10L
Leadtime
2-3 weeks
YG2-IN-97MOSFET N-CH 100V 5.5A TO-220FTubeQFET®ObsoleteN-ChannelMOSFET Metal Oxide 100V5.5A Tc -2V @ 250µA6nC @ 5V290pF @ 25V--23W Tc 350 mOhm @ 2.75A, 10V-55°C ~ 175°C TJ Through HoleTO-220FTO-220-3 Full Pack
DMP1081UCB4-7
DMP1081UCB4-7
3000+0.270618
6000+0.251951
15000+0.242618
Increments of 3000
Leadtime
2-3 weeks
HQNVH-VCTH-85MOSFET P-CH 12V 3.3A U-WLB1010-4Tape & Reel TR -ActiveP-ChannelMOSFET Metal Oxide 12V3A Ta , 3.3A Ta 0.9V, 4.5V650mV @ 250µA5nC @ 4.5V350pF @ 6V-6V-820mW Ta 80 mOhm @ 500mA, 4.5V-55°C ~ 150°C TJ Surface MountU-WLB1010-44-UFBGA, WLBGA
DMG4407SSS-13
DMG4407SSS-13
2500+0.208941
Increments of 2500
Leadtime
2-3 weeks
QJ-ND5-BHMOSFET P-CH 30V 9.9A 8-SOTape & Reel TR -ActiveP-ChannelMOSFET Metal Oxide 30V9.9A Ta -3V @ 250µA20.5nC @ 10V2246pF @ 15V--1.45W Ta 11 mOhm @ 12A, 20V-50°C ~ 150°C TJ Surface Mount8-SO8-SOIC 0.154 , 3.90mm Width
SFP9Z24
SFP9Z24
Leadtime
2-3 weeks
U5MUD-6RB-32MMOSFET P-CH 60V 9.7A TO-220Tube-ObsoleteP-ChannelMOSFET Metal Oxide 60V9.7A Tc -4V @ 250µA19nC @ 10V600pF @ 25V--49W Tc 280 mOhm @ 4.9A, 10V-55°C ~ 175°C TJ Through HoleTO-220-3TO-220-3
SIR436DP-T1-GE3-Cut
SIR436DP-T1-GE3
1+1.29412
10+1.15686
25+1.09843
100+0.902353
250+0.843451
Increments of 1
Leadtime
2-3 weeks
KXDJ-9U-R2MOSFET N-CH 25V 40A PPAK SO-8Cut Tape CT TrenchFET®ActiveN-ChannelMOSFET Metal Oxide 25V40A Tc 4.5V, 10V3V @ 250µA47nC @ 10V1715pF @ 15V±20V-5W Ta , 50W Tc 4.6 mOhm @ 20A, 10V-55°C ~ 150°C TJ Surface MountPowerPAK® SO-8PowerPAK® SO-8
STFV4N150
STFV4N150
Leadtime
2-3 weeks
NIB-XZOW-XUMOSFET N-CH 1500V 4A TO-220FHTubePowerMESH™ObsoleteN-ChannelMOSFET Metal Oxide 1500V 1.5kV 4A Tc -5V @ 250µA50nC @ 10V1300pF @ 25V--40W Tc 7 Ohm @ 2A, 10V150°C TJ Through HoleTO-220TO-220-3 Full Pack, Isolated Tab
IRFU3711PBF
IRFU3711PBF
Leadtime
2-3 weeks
I7-44N-02BMOSFET N-CH 20V 100A I-PAKTubeHEXFET®ObsoleteN-ChannelMOSFET Metal Oxide 20V100A Tc -3V @ 250µA44nC @ 4.5V2980pF @ 10V--2.5W Ta , 120W Tc 6.5 mOhm @ 15A, 10V-55°C ~ 150°C TJ Through HoleIPAK TO-251 TO-251-3 Short Leads, IPak, TO-251AA
OWM6-KS-EJ
OWM6-KS-EJ
1+1.55882
10+1.3951
25+1.32392
100+1.08765
250+1.01671
Increments of 1
Leadtime
2-3 weeks
ZD9XD-3NZ-VBMOSFET P-CH 20V 60A PPAK SO-8Cut Tape CT TrenchFET®ActiveP-ChannelMOSFET Metal Oxide 20V60A Tc 2.5V, 10V1.4V @ 250µA625nC @ 10V22000pF @ 10V±12V-6.25W Ta , 104W Tc 1.6 mOhm @ 25A, 10V-55°C ~ 150°C TJ Surface MountPowerPAK® SO-8PowerPAK® SO-8