ManufacturerPackagingSeriesPart StatusFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsVgs (Max)FET FeaturePower Dissipation (Max)Rds On (Max) @ Id, VgsOperating TemperatureMounting TypeSupplier Device PackagePackage / Case
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
Technology
Drain to Source Voltage ...
Current - Continuous ...
Drive Voltage (Max ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Vgs (Max)
FET Feature
Power Dissipation ...
Rds On (Max) @ Id, ...
Operating Temperature ...
Mounting Type
Supplier Device Package ...
Package / Case
IXFX24N100Q3
IXFX24N100Q3
1+21.5588
10+19.6
25+18.1302
100+16.66
250+15.19
Increments of 1
Leadtime
2-3 weeks		U2-XQZE-ENMMOSFET N-CH 1000V 24A PLUS247TubeHiPerFET™ActiveN-ChannelMOSFET Metal Oxide 1000V 1kV 24A Tc 10V6.5V @ 4mA140nC @ 10V7200pF @ 25V±30V-1000W Tc 440 mOhm @ 12A, 10V-55°C ~ 150°C TJ Through HolePLUS247™-3TO-247-3
SIR470DP-T1-GE3
SIR470DP-T1-GE3
3000+1.26464
Increments of 3000
55P-IM9-OWMOSFET N-CH 40V 60A PPAK SO-8Tape & Reel TR TrenchFET®ActiveN-ChannelMOSFET Metal Oxide 40V60A Tc 4.5V, 10V2.5V @ 250µA155nC @ 10V5660pF @ 20V±20V-6.25W Ta , 104W Tc 2.3 mOhm @ 20A, 10V-55°C ~ 150°C TJ Surface MountPowerPAK® SO-8PowerPAK® SO-8
N0434N-S23-AY
N0434N-S23-AY
1000+0.736088
Increments of 1000
Leadtime
2-3 weeks		0ZV-HHM-UHCMOSFET N-CH 40V 100A TO-262Tape & Reel TR -ActiveN-ChannelMOSFET Metal Oxide 40V100A Ta --100nC @ 10V5550pF @ 25V--1.5W Ta , 119W Tc 3.7 mOhm @ 50A, 10V150°C TJ Through HoleTO-262TO-262-3 Long Leads, I²Pak, TO-262AA
SI1012CR-T1-GE3
SI1012CR-T1-GE3
3000+0.101912
6000+0.0962549
15000+0.0877549
30000+0.082098
Increments of 3000
33N16-S4-2GWMOSFET N-CH 20V 0.63A SC-75ATape & Reel TR TrenchFET®ActiveN-ChannelMOSFET Metal Oxide 20V-1.5V, 4.5V1V @ 250µA2nC @ 8V43pF @ 10V±8V-240mW Ta 396 mOhm @ 600mA, 4.5V-55°C ~ 150°C TJ Surface MountSC-75ASC-75, SOT-416
FDMS86350
FDMS86350
3000+1.62925
Increments of 3000
55CV-8MCC-XUMOSFET N-CH 80V 80A POWER56Tape & Reel TR PowerTrench®ActiveN-ChannelMOSFET Metal Oxide 80V25A Ta , 130A Tc 8V, 10V4.5V @ 250µA155nC @ 10V10680pF @ 40V±20V-2.7W Ta , 156W Tc 2.4 mOhm @ 25A, 10V-55°C ~ 150°C TJ Surface MountPower568-PowerTDFN
IRL3713PBF
IRL3713PBF
1+2.19608
10+1.97059
100+1.58392
500+1.30139
1000+1.07828
Increments of 1
Leadtime
2-3 weeks		YK0D8-S4G-HMMOSFET N-CH 30V 260A TO-220ABTubeHEXFET®ActiveN-ChannelMOSFET Metal Oxide 30V260A Tc 4.5V, 10V2.5V @ 250µA110nC @ 4.5V5890pF @ 15V±20V-330W Tc 3 mOhm @ 38A, 10V-55°C ~ 175°C TJ Through HoleTO-220ABTO-220-3
NTD4804NA-35G
NTD4804NA-35G
Leadtime
2-3 weeks		N6SK-06S-3GMOSFET N-CH 30V 14.5A IPAKTube-ObsoleteN-ChannelMOSFET Metal Oxide 30V14.5A Ta , 124A Tc -2.5V @ 250µA40nC @ 4.5V4490pF @ 12V--1.43W Ta , 93.75W Tc 4 mOhm @ 30A, 10V-55°C ~ 175°C TJ Through HoleI-PakTO-251-3 Stub Leads, IPak
DMG7401SFG-7-Cut
DMG7401SFG-7
1+0.578431
10+0.497059
100+0.371078
500+0.291588
1000+0.225314
Increments of 1
Leadtime
2-3 weeks		V3C-76M-LKUMOSFET P-CH 30V 9.8A POWERDI3333Cut Tape CT -ActiveP-ChannelMOSFET Metal Oxide 30V9.8A Ta 4.5V, 20V3V @ 250µA58nC @ 10V2987pF @ 15V±25V-940mW Ta 11 mOhm @ 12A, 20V-55°C ~ 150°C TJ Surface MountPowerDI3333-88-PowerWDFN
IXFH18N90P
IXFH18N90P
1+9.64706
10+8.68529
25+7.91372
100+7.14157
250+6.56251
Increments of 1
Leadtime
2-3 weeks		XO-V4H-N5MOSFET N-CH TO-247TubeHiPerFET™, PolarP2™ActiveN-ChannelMOSFET Metal Oxide 900V18A Tc 10V6.5V @ 1mA97nC @ 10V5230pF @ 25V±30V-540W Tc 600 mOhm @ 500mA, 10V-55°C ~ 150°C TJ Through HoleTO-247AD IXFH TO-247-3
NTD85N02RT4G-Cut
NTD85N02RT4G
33A-XC-KAMOSFET N-CH 24V 12A DPAKCut Tape CT -ObsoleteN-ChannelMOSFET Metal Oxide 24V12A Ta , 85A Tc -2V @ 250µA17.7nC @ 5V2050pF @ 20V--1.25W Ta , 78.1W Tc 5.2 mOhm @ 20A, 10V-55°C ~ 150°C TJ Surface MountDPAKTO-252-3, DPak 2 Leads + Tab , SC-63
IXFB300N10P
IXFB300N10P
25+20.7024
Increments of 25
Leadtime
2-3 weeks		NZ9Y-I4T9-GX6MOSFET N-CH 100V 300A PLUS264TubeHiPerFET™, PolarP2™ActiveN-ChannelMOSFET Metal Oxide 100V300A Tc -5V @ 8mA279nC @ 10V23000pF @ 25V--1500W Tc 5.5 mOhm @ 50A, 10V-55°C ~ 175°C TJ Through HolePLUS264™TO-264-3, TO-264AA
DMP26M7UFG-7-Cut
DMP26M7UFG-7
1+0.833333
10+0.734314
100+0.563333
500+0.445333
1000+0.356255
Increments of 1
22GNYL-DCY-2JMOSFET P-CH 20V 18A PWRDI3333-8Cut Tape CT -ActiveP-ChannelMOSFET Metal Oxide 20V18A Ta , 40A Tc 1.8V, 4.5V1V @ 250µA156nC @ 10V5940pF @ 10V±10V-2.3W Ta 6.7 mOhm @ 15A, 4.5V-55°C ~ 150°C TJ Surface MountPowerDI3333-88-PowerWDFN
SI3812DV-T1-GE3
SI3812DV-T1-GE3
Leadtime
2-3 weeks		VP-NPM-56WMOSFET N-CH 20V 2A 6-TSOPTape & Reel TR LITTLE FOOT®ObsoleteN-ChannelMOSFET Metal Oxide 20V2A Ta -600mV @ 250µA Min 4nC @ 4.5V--Schottky Diode Isolated 830mW Ta 125 mOhm @ 2.4A, 4.5V-55°C ~ 150°C TJ Surface Mount6-TSOPSOT-23-6 Thin, TSOT-23-6
2SK122800L
2SK122800L
Leadtime
2-3 weeks		FQL2-K5LG-BXAMOSFET N-CH 50V 50MA MINI 3-PINTape & Reel TR -ObsoleteN-ChannelMOSFET Metal Oxide 50V50mA Ta -1.1V @ 100µA-4.5pF @ 5V--150mW Ta 50 Ohm @ 10mA, 2.5V150°C TJ Surface MountMini3-G1TO-236-3, SC-59, SOT-23-3
IPD60R1K0CEATMA1-Cut
IPD60R1K0CEATMA1
1+0.637255
10+0.559804
100+0.429216
500+0.339294
1000+0.271431
Increments of 1
Leadtime
2-3 weeks		Z81FI-QW-SW6MOSFET N-CH 600V TO-252-3Cut Tape CT CoolMOS™ CENot For New DesignsN-ChannelMOSFET Metal Oxide 600V4.3A Tc 10V3.5V @ 130µA13nC @ 10V280pF @ 100V±20V-37W Tc 1 Ohm @ 1.5A, 10V-40°C ~ 150°C TJ Surface MountTO-252-3TO-252-3, DPak 2 Leads + Tab , SC-63
DN2540N3-G-P003
DN2540N3-G-P003
2000+0.585696
Increments of 2000
Leadtime
2-3 weeks		XZ3W-KPGL-YFAMOSFET N-CH 400V 0.12A TO92-3Tape & Reel TR -ActiveN-ChannelMOSFET Metal Oxide 400V120mA Tj ---300pF @ 25V-Depletion Mode1W Tc 25 Ohm @ 120mA, 0V-55°C ~ 150°C TJ Through HoleTO-92 TO-226 TO-226-3, TO-92-3 TO-226AA
IRF6645TR1PBF
IRF6645TR1PBF
Leadtime
2-3 weeks		BD-2ZL-ILWMOSFET N-CH 100V 5.7A DIRECTFETTape & Reel TR HEXFET®ObsoleteN-ChannelMOSFET Metal Oxide 100V5.7A Ta , 25A Tc -4.9V @ 50µA20nC @ 10V890pF @ 25V--2.2W Ta , 42W Tc 35 mOhm @ 5.7A, 10V-40°C ~ 150°C TJ Surface MountDIRECTFET™ SJDirectFET™ Isometric SJ
PHD34NQ10T,118
PHD34NQ10T,118
2424HU-TKX-FBMOSFET N-CH 100V 35A DPAKTape & Reel TR TrenchMOS™ObsoleteN-ChannelMOSFET Metal Oxide 100V35A Tc -4V @ 1mA40nC @ 10V1704pF @ 25V--136W Tc 40 mOhm @ 17A, 10V-55°C ~ 175°C TJ Surface MountDPAKTO-252-3, DPak 2 Leads + Tab , SC-63
LND150N3-G-P003
LND150N3-G-P003
2000+0.383725
Increments of 2000
99VJZ-4C4G-WHTMOSFET N-CH 500V 30MA TO92-3Tape & Reel TR -ActiveN-ChannelMOSFET Metal Oxide 500V30mA Tj ---10pF @ 25V-Depletion Mode740mW Ta 1000 Ohm @ 500µA, 0V-55°C ~ 150°C TJ Through HoleTO-92-3TO-226-3, TO-92-3 TO-226AA
BUK714R1-40BT,118-Cut
BUK714R1-40BT,118
1+2.71569
10+2.4402
100+1.99961
Increments of 1
Leadtime
2-3 weeks		BQG-VEX-36QMOSFET N-CH 40V 75A D2PAKCut Tape CT TrenchPLUSObsoleteN-ChannelMOSFET Metal Oxide 40V75A Tc -4V @ 1mA83nC @ 10V6808pF @ 25V-Temperature Sensing Diode272W Tc 4.1 mOhm @ 50A, 10V-55°C ~ 175°C TJ Surface MountSOT-426TO-263-5, D²Pak 4 Leads + Tab , TO-263BB
PMF63UNEAX
PMF63UNEAX
3000+0.100059
Increments of 3000
Leadtime
2-3 weeks		CM-2UOJ-XSMOSFET N-CH 20V 2A SC70--ActiveN-ChannelMOSFET Metal Oxide 20V2A Ta 1.8V, 4.5V1V @ 250µA5.85nC @ 4.5V289pF @ 10V±8V-395mW Ta 65 mOhm @ 2A, 4.5V-55°C ~ 150°C TJ Surface MountSC-70SC-70, SOT-323
AO6409-Cut
AO6409
1+0.568627
10+0.44902
25+0.378431
100+0.308039
250+0.255216
Increments of 1
Leadtime
2-3 weeks		VK-6W-3KCMOSFET P-CH 20V 5.5A 6TSOPCut Tape CT -ActiveP-ChannelMOSFET Metal Oxide 20V5.5A Ta 1.8V, 4.5V1V @ 250µA17.2nC @ 4.5V1450pF @ 10V±8V-2.1W Ta 45 mOhm @ 5A, 4.5V-55°C ~ 150°C TJ Surface Mount6-TSOPSC-74, SOT-457
RAL025P01TCR
RAL025P01TCR
3000+0.103765
6000+0.098
15000+0.0893529
30000+0.0835882
Increments of 3000
Leadtime
2-3 weeks		EX-56-I1NMOSFET P-CH 12V 2.5A TUMT6Tape & Reel TR -ActiveP-ChannelMOSFET Metal Oxide 12V2.5A Ta 1.5V, 4.5V1V @ 1mA16nC @ 4.5V2000pF @ 6V-8V-320mW Ta 62 mOhm @ 2.5A, 4.5V150°C TJ Surface MountTUMT66-SMD, Flat Leads
IRLU3714TR
IRLU3714TR
Leadtime
2-3 weeks		NL2S0-O8UI-00MOSFET N-CH 20V 36A I-PAKTape & Reel TR -ActiveN-ChannelMOSFET Metal Oxide 20V36A Tc -3V @ 250µA9.7nC @ 4.5V670pF @ 10V--47W Tc 20 mOhm @ 18A, 10V-55°C ~ 175°C TJ Through HoleTO-251AATO-251-3 Short Leads, IPak, TO-251AA
IXTA12N65X2
IXTA12N65X2
1+3.12745
10+2.82451
25+2.52196
100+2.2699
250+2.01765
Increments of 1
88UDV-PUWV-CNMOSFET N-CH 650V 12A TO-263Tube-ActiveN-ChannelMOSFET Metal Oxide 650V12A Tc 10V5V @ 250µA17nC @ 10V1100pF @ 25V±30V-180W Tc 300 mOhm @ 6A, 10V-55°C ~ 150°C TJ Surface MountTO-263AATO-263-3, D²Pak 2 Leads + Tab Variant