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| Manufacturer | Toshiba Semiconductor and Storage |
| Packaging | Cut Tape (CT) |
| Series | - |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Rds On (Max) @ Id, Vgs | 46 mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 10V |
| Power - Max | 1W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Supplier Device Package | 6-µDFN(2x2) |
| Standard Package | 1 |
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