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| Manufacturer | IXYS |
| Packaging | Tube |
| Series | HiPerFET™, TrenchT2™ |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 120A |
| Rds On (Max) @ Id, Vgs | 5.8 mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 178nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500pF @ 25V |
| Power - Max | 170W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | i4-Pac™-5 |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Standard Package | 25 |
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MOSFET 2N-CH 30V 22A 36A 8DFN
MOSFET 6N-CH 1200V 17A SP6-P
MOSFET 2P-CH 20V 8.2A 8SOIC
MOSFET N P-CH 20V SOT-563
20V NCH+PCH MIDDLE POWER MOSFET
MOSFET 4N-CH 10.6V 16DIP
MOSFET 2P-CH 20V 0.41A SC70-6
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