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| Manufacturer | EPC |
| Packaging | Tape & Reel (TR) |
| Series | eGaN® |
| Part Status | Active |
| FET Type | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 60V, 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 2.5A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.22nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 22pF @ 30V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Standard Package | 2,500 |
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MOSFET 2P-CH 20V 8.2A 8SOIC
MOSFET N P-CH 20V SOT-563
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MOSFET 2P-CH 20V 0.41A SC70-6
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