Manufacturer | Rohm Semiconductor |
Packaging | Bulk |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 180A |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 4V @ 35.2mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 10V |
Power - Max | 1130W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | - |
Package / Case | Module |
Supplier Device Package | Module |
Standard Package | 12 |
MOSFET 2N-CH 40V 3.4A 8-SOIC
MOSFET 2N 2P-CH 100V 1A 0.8A SM8
MOSFET 2N-CH 30V 4.5A 8-SOIC
MOSFET 2N-CH 10.6V 8DIP
MOSFET 2N-CH 30V 22A 30A 8DFN
MOSFET 2N-CH 30V 22A 36A 8DFN
MOSFET 6N-CH 1200V 17A SP6-P
MOSFET 2P-CH 20V 8.2A 8SOIC
MOSFET N P-CH 20V SOT-563
20V NCH+PCH MIDDLE POWER MOSFET
MOSFET 4N-CH 10.6V 16DIP
MOSFET 2P-CH 20V 0.41A SC70-6