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| Manufacturer | Microsemi Corporation |
| Packaging | Bulk |
| Series | POWER MOS 7® |
| Part Status | Active |
| FET Type | 4 N-Channel H-Bridge |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 1000V 1kV |
| Current - Continuous Drain (Id) @ 25°C | 18A |
| Rds On (Max) @ Id, Vgs | 540 mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 154nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4350pF @ 25V |
| Power - Max | 357W |
| Operating Temperature | -40°C ~ 150°C TJ |
| Mounting Type | Chassis Mount |
| Package / Case | SP4 |
| Supplier Device Package | SP4 |
| Standard Package | 1 |
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