ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
IRF7342TRPBF
IRF7342TRPBF
4000+0.432353
8000+0.410735
12000+0.395294
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 55V 3.4A 8-SOICTape & Reel (TR)HEXFET®Active2 P-Channel (Dual)Logic Level Gate55V3.4A105 mOhm @ 3.4A, 10V1V @ 250µA38nC @ 10V690pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7343TRPBF
IRF7343TRPBF
4000+0.358235
8000+0.333529
12000+0.321176
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET N/P-CH 55V 8-SOICTape & Reel (TR)HEXFET®ActiveN and P-ChannelStandard55V4.7A, 3.4A50 mOhm @ 4.7A, 10V1V @ 250µA36nC @ 10V740pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7301TRPBF
IRF7301TRPBF
4000+0.347784
8000+0.323804
12000+0.311814
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 20V 5.2A 8-SOICTape & Reel (TR)HEXFET®Active2 N-Channel (Dual)Logic Level Gate20V5.2A50 mOhm @ 2.6A, 4.5V700mV @ 250µA20nC @ 4.5V660pF @ 15V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7304TRPBF
IRF7304TRPBF
4000+0.348382
8000+0.324363
12000+0.312343
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 20V 4.3A 8-SOICTape & Reel (TR)HEXFET®Active2 P-Channel (Dual)Logic Level Gate20V4.3A90 mOhm @ 2.2A, 4.5V700mV @ 250µA22nC @ 4.5V610pF @ 15V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7380PBF
IRF7380PBF
3800+0.403529
Increments of 3800
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 80V 3.6A 8-SOICTubeHEXFET®Not For New Designs2 N-Channel (Dual)Logic Level Gate80V3.6A73 mOhm @ 2.2A, 10V4V @ 250µA23nC @ 10V660pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
BSS138DW-7-F-Cut
BSS138DW-7-F
1+0.480392
10+0.391176
100+0.266569
500+0.199941
1000+0.149961
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 50V 0.2A SC70-6Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate50V200mA3.5 Ohm @ 220mA, 10V1.5V @ 250µA-50pF @ 10V200mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
BSS138DW-7-F
BSS138DW-7-F
3000+0.133461
6000+0.125373
15000+0.117284
30000+0.107578
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 50V 0.2A SC70-6Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate50V200mA3.5 Ohm @ 220mA, 10V1.5V @ 250µA-50pF @ 10V200mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
ZXMHC10A07T8TA-Cut
ZXMHC10A07T8TA
1+1.71569
10+1.5451
100+1.24216
500+1.02053
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N/2P-CH 100V 1A/0.8A SM8Cut Tape (CT)-Active2 N and 2 P-Channel (H-Bridge)Standard100V1A, 800mA700 mOhm @ 1.5A, 10V4V @ 250µA2.9nC @ 10V138pF @ 60V1.3W-55°C ~ 150°C (TJ)Surface MountSOT-223-8SM8
ZXMHC10A07T8TA
ZXMHC10A07T8TA
1000+0.820961
2000+0.764343
5000+0.736029
Increments of 1000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N/2P-CH 100V 1A/0.8A SM8Tape & Reel (TR)-Active2 N and 2 P-Channel (H-Bridge)Standard100V1A, 800mA700 mOhm @ 1.5A, 10V4V @ 250µA2.9nC @ 10V138pF @ 60V1.3W-55°C ~ 150°C (TJ)Surface MountSOT-223-8SM8
NTQD6968NR2
NTQD6968NR2
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2N-CH 20V 6.2A 8TSSOPTape & Reel (TR)-Obsolete2 N-Channel (Dual)Logic Level Gate20V6.2A22 mOhm @ 7A, 4.5V1.2V @ 250µA17nC @ 4.5V630pF @ 16V1.39W-55°C ~ 150°C (TJ)Surface Mount8-TSSOP (0.173", 4.40mm Width)8-TSSOP
IRF7501TRPBF
IRF7501TRPBF
4000+0.272265
8000+0.25348
12000+0.244098
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 20V 2.4A MICRO8Tape & Reel (TR)HEXFET®Active2 N-Channel (Dual)Logic Level Gate20V2.4A135 mOhm @ 1.7A, 4.5V700mV @ 250µA8nC @ 4.5V260pF @ 15V1.25W-55°C ~ 150°C (TJ)Surface Mount8-TSSOP, 8-MSOP (0.118", 3.00mm Width)Micro8™
ZXMN6A25DN8TA
ZXMN6A25DN8TA
500+0.672824
1000+0.531177
2500+0.495765
5000+0.47098
Increments of 500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 60V 3.8A 8-SOICTape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate60V3.8A50 mOhm @ 3.6A, 10V1V @ 250µA (Min)20.4nC @ 10V1063pF @ 30V1.8W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
2N7002DW-7-F-Cut
2N7002DW-7-F
1+0.362745
10+0.266667
100+0.15098
500+0.0999804
1000+0.0766471
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 60V 0.23A SOT-363Cut Tape (CT)-Active2 N-Channel (Dual)Standard60V230mA7.5 Ohm @ 50mA, 5V2V @ 250µA-50pF @ 25V310mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
2N7002DW-7-F
2N7002DW-7-F
3000+0.0647059
6000+0.0582353
15000+0.0517647
30000+0.0485294
75000+0.0430294
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 60V 0.23A SOT-363Tape & Reel (TR)-Active2 N-Channel (Dual)Standard60V230mA7.5 Ohm @ 50mA, 5V2V @ 250µA-50pF @ 25V310mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
STS8DNH3LL-Cut
STS8DNH3LL
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2N-CH 30V 8A 8-SOICCut Tape (CT)STripFET™ IIIObsolete2 N-Channel (Dual)Logic Level Gate30V8A22 mOhm @ 4A, 10V1V @ 250µA10nC @ 4.5V857pF @ 25V2W150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
STS8C5H30L-Cut
STS8C5H30L
1+1.60784
10+1.43529
100+1.11931
500+0.924686
1000+0.73001
Increments of 1
Leadtime
2-3 weeks
STMicroelectronicsMOSFET N/P-CH 30V 8A/5.4A 8SOICCut Tape (CT)STripFET™ IIIActiveN and P-ChannelLogic Level Gate30V8A, 5.4A22 mOhm @ 4A, 10V1V @ 250µA10nC @ 5V857pF @ 25V2W150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
STS4C3F60L-Cut
STS4C3F60L
Leadtime
2-3 weeks
STMicroelectronicsMOSFET N/P-CH 60V 4A/3A 8SOICCut Tape (CT)STripFET™ObsoleteN and P-ChannelLogic Level Gate60V4A, 3A55 mOhm @ 2A, 10V1V @ 250µA20.4nC @ 4.5V1030pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
STC5NF30V-Cut
STC5NF30V
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2N-CH 30V 5A 8-TSSOPCut Tape (CT)STripFET™ IIObsolete2 N-Channel (Dual)Logic Level Gate30V5A31 mOhm @ 2.5A, 4.5V600mV @ 250µA11.5nC @ 4.5V460pF @ 15V1.5W-55°C ~ 150°C (TJ)Surface Mount8-TSSOP (0.173", 4.40mm Width)8-TSSOP
STS8C5H30L
STS8C5H30L
2500+0.6615
5000+0.628422
Increments of 2500
Leadtime
2-3 weeks
STMicroelectronicsMOSFET N/P-CH 30V 8A/5.4A 8SOICTape & Reel (TR)STripFET™ IIIActiveN and P-ChannelLogic Level Gate30V8A, 5.4A22 mOhm @ 4A, 10V1V @ 250µA10nC @ 5V857pF @ 25V2W150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
STS4C3F60L
STS4C3F60L
Leadtime
2-3 weeks
STMicroelectronicsMOSFET N/P-CH 60V 4A/3A 8SOICTape & Reel (TR)STripFET™ObsoleteN and P-ChannelLogic Level Gate60V4A, 3A55 mOhm @ 2A, 10V1V @ 250µA20.4nC @ 4.5V1030pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
STS8DNH3LL
STS8DNH3LL
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2N-CH 30V 8A 8-SOICTape & Reel (TR)STripFET™ IIIObsolete2 N-Channel (Dual)Logic Level Gate30V8A22 mOhm @ 4A, 10V1V @ 250µA10nC @ 4.5V857pF @ 25V2W150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
STC5NF30V
STC5NF30V
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2N-CH 30V 5A 8-TSSOPTape & Reel (TR)STripFET™ IIObsolete2 N-Channel (Dual)Logic Level Gate30V5A31 mOhm @ 2.5A, 4.5V600mV @ 250µA11.5nC @ 4.5V460pF @ 15V1.5W-55°C ~ 150°C (TJ)Surface Mount8-TSSOP (0.173", 4.40mm Width)8-TSSOP
US6M2TR-Cut
US6M2TR
1+0.627451
10+0.54902
25+0.486275
100+0.423726
250+0.368784
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 30V/20V TUMT6Cut Tape (CT)-ActiveN and P-ChannelStandard30V, 20V1.5A, 1A240 mOhm @ 1.5A, 4.5V1.5V @ 1mA2.2nC @ 4.5V80pF @ 10V1W150°C (TJ)Surface Mount6-SMD, Flat LeadsTUMT6
US6M1TR-Cut
US6M1TR
1+0.627451
10+0.54902
25+0.486275
100+0.423726
250+0.368784
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 30V/20V TUMT6Cut Tape (CT)-ActiveN and P-ChannelLogic Level Gate30V, 20V1.4A, 1A240 mOhm @ 1.4A, 10V2.5V @ 1mA2nC @ 5V70pF @ 10V1W150°C (TJ)Surface Mount6-SMD, Flat LeadsTUMT6
US6K2TR-Cut
US6K2TR
1+0.715686
10+0.606863
25+0.530588
100+0.454902
250+0.394235
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2N-CH 30V 1.4A TUMT6Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate30V1.4A240 mOhm @ 1.4A, 10V2.5V @ 1mA2nC @ 5V70pF @ 10V1W150°C (TJ)Surface Mount6-SMD, Flat LeadsTUMT6