ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
IRF8910PBF
IRF8910PBF
1+0.921569
10+0.827451
100+0.644902
500+0.532745
1000+0.420588
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 20V 10A 8-SOICTubeHEXFET®2 N-Channel (Dual)Logic Level Gate20V10A13.4 mOhm @ 10A, 10V2.55V @ 250µA11nC @ 4.5V960pF @ 10V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7530TRPBF
IRF7530TRPBF
4000+0.292559
8000+0.272382
12000+0.262294
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 20V 5.4A MICRO8Tape & Reel (TR)HEXFET®Active2 N-Channel (Dual)Standard20V5.4A30 mOhm @ 5.4A, 4.5V1.2V @ 250µA26nC @ 4.5V1310pF @ 15V1.3W-55°C ~ 150°C (TJ)Surface Mount8-TSSOP, 8-MSOP (0.118", 3.00mm Width)Micro8™
IRF7509TRPBF
IRF7509TRPBF
4000+0.250765
8000+0.233471
12000+0.224824
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET N/P-CH 30V 2.7A/2A MICRO8Tape & Reel (TR)HEXFET®ActiveN and P-ChannelLogic Level Gate30V2.7A, 2A110 mOhm @ 1.7A, 10V1V @ 250µA12nC @ 10V210pF @ 25V1.25W-55°C ~ 150°C (TJ)Surface Mount8-TSSOP, 8-MSOP (0.118", 3.00mm Width)Micro8™
IRF7504TRPBF
IRF7504TRPBF
4000+0.245392
8000+0.228471
12000+0.22001
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 20V 1.7A MICRO8Tape & Reel (TR)HEXFET®Active2 P-Channel (Dual)Logic Level Gate20V1.7A270 mOhm @ 1.2A, 4.5V700mV @ 250µA8.2nC @ 4.5V240pF @ 15V1.25W-55°C ~ 150°C (TJ)Surface Mount8-TSSOP, 8-MSOP (0.118", 3.00mm Width)Micro8™
IRF7503TRPBF
IRF7503TRPBF
4000+0.213176
8000+0.199422
12000+0.185667
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 30V 2.4A MICRO8Tape & Reel (TR)HEXFET®Active2 N-Channel (Dual)Logic Level Gate30V2.4A135 mOhm @ 1.7A, 10V1V @ 250µA12nC @ 10V210pF @ 25V1.25W-55°C ~ 150°C (TJ)Surface Mount8-TSSOP, 8-MSOP (0.118", 3.00mm Width)Micro8™
IRF7389PBF
IRF7389PBF
1+1.23529
10+1.10392
100+0.860882
500+0.711157
1000+0.561441
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET N/P-CH 30V 8-SOICTubeHEXFET®Not For New DesignsN and P-ChannelLogic Level Gate30V-29 mOhm @ 5.8A, 10V1V @ 250µA33nC @ 10V650pF @ 25V2.5W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7343PBF
IRF7343PBF
1+0.931373
10+0.815686
100+0.625098
500+0.494118
1000+0.395294
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET N/P-CH 55V 8-SOICTubeHEXFET®Not For New DesignsN and P-ChannelStandard55V4.7A, 3.4A50 mOhm @ 4.7A, 10V1V @ 250µA36nC @ 10V740pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7342PBF
IRF7342PBF
1+1.01961
10+0.910784
100+0.710294
500+0.586765
1000+0.463235
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 55V 3.4A 8-SOICTubeHEXFET®Not For New Designs2 P-Channel (Dual)Logic Level Gate55V3.4A105 mOhm @ 3.4A, 10V1V @ 250µA38nC @ 10V690pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7341PBF
IRF7341PBF
1+0.852941
10+0.765686
100+0.596667
500+0.492882
1000+0.389118
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 55V 4.7A 8-SOICTubeHEXFET®Not For New Designs2 N-Channel (Dual)Logic Level Gate55V4.7A50 mOhm @ 4.7A, 10V1V @ 250µA36nC @ 10V740pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7329PBF
IRF7329PBF
1+1.28431
10+1.14412
100+0.892157
500+0.73698
1000+0.581824
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 12V 9.2A 8-SOICTubeHEXFET®Not For New Designs2 P-Channel (Dual)Logic Level Gate12V9.2A17 mOhm @ 9.2A, 4.5V900mV @ 250µA57nC @ 4.5V3450pF @ 10V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7328PBF
IRF7328PBF
3800+0.562059
Increments of 3800
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 30V 8A 8-SOICTubeHEXFET®Not For New Designs2 P-Channel (Dual)Logic Level Gate30V8A21 mOhm @ 8A, 10V2.5V @ 250µA78nC @ 10V2675pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7319PBF
IRF7319PBF
3800+0.380471
Increments of 3800
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET N/P-CH 30V 8SOICTubeHEXFET®Not For New DesignsN and P-ChannelStandard30V-29 mOhm @ 5.8A, 10V1V @ 250µA33nC @ 10V650pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7317PBF
IRF7317PBF
3800+0.432353
Increments of 3800
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET N/P-CH 20V 8-SOICTubeHEXFET®Not For New DesignsN and P-ChannelLogic Level Gate20V6.6A, 5.3A29 mOhm @ 6A, 4.5V700mV @ 250µA27nC @ 4.5V900pF @ 15V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7316PBF
IRF7316PBF
3800+0.397765
Increments of 3800
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 30V 4.9A 8-SOICTubeHEXFET®Not For New Designs2 P-Channel (Dual)Logic Level Gate30V4.9A58 mOhm @ 4.9A, 10V1V @ 250µA34nC @ 10V710pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7314PBF
IRF7314PBF
3800+0.341176
Increments of 3800
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 20V 5.3A 8-SOICTubeHEXFET®Not For New Designs2 P-Channel (Dual)Logic Level Gate20V5.3A58 mOhm @ 2.9A, 4.5V700mV @ 250µA29nC @ 4.5V780pF @ 15V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7313PBF
IRF7313PBF
1+0.833333
10+0.733333
100+0.562549
500+0.444706
1000+0.355765
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 30V 6.5A 8-SOICTubeHEXFET®Not For New Designs2 N-Channel (Dual)Standard30V6.5A29 mOhm @ 5.8A, 10V1V @ 250µA33nC @ 10V650pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7311PBF
IRF7311PBF
3800+0.406412
Increments of 3800
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 20V 6.6A 8-SOICTubeHEXFET®Not For New Designs2 N-Channel (Dual)Logic Level Gate20V6.6A29 mOhm @ 6A, 4.5V700mV @ 250µA27nC @ 4.5V900pF @ 15V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7309PBF
IRF7309PBF
3800+0.259725
Increments of 3800
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET N/P-CH 30V 4A/3A 8SOICTubeHEXFET®Not For New DesignsN and P-ChannelStandard30V4A, 3A50 mOhm @ 2.4A, 10V1V @ 250µA25nC @ 4.5V520pF @ 15V1.4W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7307PBF
IRF7307PBF
3800+0.345441
Increments of 3800
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET N/P-CH 20V 8-SOICTubeHEXFET®Not For New DesignsN and P-ChannelLogic Level Gate20V5.2A, 4.3A50 mOhm @ 2.6A, 4.5V700mV @ 250µA20nC @ 4.5V660pF @ 15V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7306PBF
IRF7306PBF
3800+0.345441
Increments of 3800
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 30V 3.6A 8-SOICTubeHEXFET®Not For New Designs2 P-Channel (Dual)Logic Level Gate30V3.6A100 mOhm @ 1.8A, 10V1V @ 250µA25nC @ 10V440pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7304PBF
IRF7304PBF
1+0.901961
10+0.793137
100+0.607843
500+0.480529
1000+0.384422
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 20V 4.3A 8-SOICTubeHEXFET®Not For New Designs2 P-Channel (Dual)Logic Level Gate20V4.3A90 mOhm @ 2.2A, 4.5V700mV @ 250µA22nC @ 4.5V610pF @ 15V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7303PBF
IRF7303PBF
1+0.784314
10+0.693137
100+0.531274
500+0.42
1000+0.336
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 30V 4.9A 8-SOICTubeHEXFET®Not For New Designs2 N-Channel (Dual)Standard30V4.9A50 mOhm @ 2.4A, 10V1V @ 250µA25nC @ 10V520pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7301PBF
IRF7301PBF
3800+0.331225
Increments of 3800
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 20V 5.2A 8-SOICTubeHEXFET®Not For New Designs2 N-Channel (Dual)Logic Level Gate20V5.2A50 mOhm @ 2.6A, 4.5V700mV @ 250µA20nC @ 4.5V660pF @ 15V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7105PBF
IRF7105PBF
1+0.607843
10+0.530392
100+0.406765
500+0.321569
1000+0.257255
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET N/P-CH 25V 8-SOICTubeHEXFET®Not For New DesignsN and P-ChannelStandard25V3.5A, 2.3A100 mOhm @ 1A, 10V3V @ 250µA27nC @ 10V330pF @ 15V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7104PBF
IRF7104PBF
3800+0.3045
Increments of 3800
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 20V 2.3A 8-SOICTubeHEXFET®Not For New Designs2 P-Channel (Dual)Logic Level Gate20V2.3A250 mOhm @ 1A, 10V3V @ 250µA25nC @ 10V290pF @ 15V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO