ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
PMWD15UN,518
PMWD15UN,518
Leadtime
2-3 weeks
NXP USA Inc.MOSFET 2N-CH 20V 11.6A 8TSSOPTape & Reel (TR)TrenchMOS™Obsolete2 N-Channel (Dual)Logic Level Gate20V11.6A18.5 mOhm @ 5A, 4.5V700mV @ 1mA22.2nC @ 4.5V1450pF @ 16V4.2W-55°C ~ 150°C (TJ)Surface Mount8-TSSOP (0.173", 4.40mm Width)8-TSSOP
DMN601VK-7-Cut
DMN601VK-7
1+0.431373
10+0.317647
100+0.180098
500+0.119294
1000+0.0914608
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 60V 0.305A SOT-563Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate60V305mA2 Ohm @ 500mA, 10V2.5V @ 250µA-50pF @ 25V250mW-65°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
DMN601DWK-7-Cut
DMN601DWK-7
1+0.490196
10+0.39902
100+0.271471
500+0.203569
1000+0.152686
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 60V 0.305A SOT-363Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate60V305mA2 Ohm @ 500mA, 10V2.5V @ 1mA-50pF @ 25V200mW-65°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
DMN601DMK-7-Cut
DMN601DMK-7
1+0.421569
10+0.357843
100+0.267157
500+0.209941
1000+0.162225
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 60V 0.51A SOT26Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate60V510mA2.4 Ohm @ 200mA, 10V2.5V @ 1mA304nC @ 4.5V50pF @ 25V700mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6SOT-26
DMN601VK-7
DMN601VK-7
3000+0.0772059
6000+0.0694902
15000+0.0617647
30000+0.057902
75000+0.0513431
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 60V 0.305A SOT-563Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate60V305mA2 Ohm @ 500mA, 10V2.5V @ 250µA-50pF @ 25V250mW-65°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
DMN601DWK-7
DMN601DWK-7
3000+0.135882
6000+0.127647
15000+0.119412
30000+0.109529
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 60V 0.305A SOT-363Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate60V305mA2 Ohm @ 500mA, 10V2.5V @ 1mA-50pF @ 25V200mW-65°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
DMN601DMK-7
DMN601DMK-7
3000+0.143608
6000+0.134343
15000+0.125078
30000+0.118588
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 60V 0.51A SOT26Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate60V510mA2.4 Ohm @ 200mA, 10V2.5V @ 1mA304nC @ 4.5V50pF @ 25V700mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6SOT-26
NTTD1P02R2G
NTTD1P02R2G
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2P-CH 20V 1.45A 8MICROTape & Reel (TR)-Obsolete2 P-Channel (Dual)Logic Level Gate20V1.45A160 mOhm @ 1.45A, 4.5V1.4V @ 250µA10nC @ 4.5V265pF @ 16V500mW-55°C ~ 150°C (TJ)Surface Mount8-TSSOP, 8-MSOP (0.118", 3.00mm Width)Micro8™
NTQD6968NR2G
NTQD6968NR2G
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2N-CH 20V 6.2A 8TSSOPTape & Reel (TR)-Obsolete2 N-Channel (Dual)Logic Level Gate20V6.2A22 mOhm @ 7A, 4.5V1.2V @ 250µA17nC @ 4.5V630pF @ 16V1.39W-55°C ~ 150°C (TJ)Surface Mount8-TSSOP (0.173", 4.40mm Width)8-TSSOP
NTQD6866R2G
NTQD6866R2G
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2N-CH 20V 4.7A 8TSSOPTape & Reel (TR)-Obsolete2 N-Channel (Dual)Logic Level Gate20V4.7A32 mOhm @ 6.9A, 4.5V1.2V @ 250µA22nC @ 4.5V1400pF @ 16V940mW-55°C ~ 150°C (TJ)Surface Mount8-TSSOP (0.173", 4.40mm Width)8-TSSOP
NTMD6P02R2G
NTMD6P02R2G
2500+0.373265
5000+0.34752
12500+0.334647
Increments of 2500
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2P-CH 20V 4.8A 8SOICTape & Reel (TR)-Active2 P-Channel (Dual)Logic Level Gate20V4.8A33 mOhm @ 6.2A, 4.5V1.2V @ 250µA35nC @ 4.5V1700pF @ 16V750mW-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
NTMD6N03R2G
NTMD6N03R2G
2500+0.283608
5000+0.264049
12500+0.254265
Increments of 2500
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2N-CH 30V 6A 8SOICTape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate30V6A32 mOhm @ 6A, 10V2.5V @ 250µA30nC @ 10V950pF @ 24V1.29W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
NTMD6N02R2G
NTMD6N02R2G
2500+0.268676
5000+0.250147
12500+0.240882
Increments of 2500
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2N-CH 20V 3.92A 8SOTape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate20V3.92A35 mOhm @ 6A, 4.5V1.2V @ 250µA20nC @ 4.5V1100pF @ 16V730mW-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
NTMD4N03R2G
NTMD4N03R2G
2500+0.23101
5000+0.216108
12500+0.201206
25000+0.190775
Increments of 2500
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2N-CH 30V 4A 8SOICTape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate30V4A60 mOhm @ 4A, 10V3V @ 250µA16nC @ 10V400pF @ 20V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
NTMD3P03R2G
NTMD3P03R2G
2500+0.39849
5000+0.378559
12500+0.364333
Increments of 2500
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2P-CH 30V 2.34A 8SOICTape & Reel (TR)-Active2 P-Channel (Dual)Logic Level Gate30V2.34A85 mOhm @ 3.05A, 10V2.5V @ 250µA25nC @ 10V750pF @ 24V730mW-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
NTMD2P01R2G
NTMD2P01R2G
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2P-CH 16V 2.3A 8SOICTape & Reel (TR)-Obsolete2 P-Channel (Dual)Logic Level Gate16V2.3A100 mOhm @ 2.4A, 4.5V1.5V @ 250µA18nC @ 4.5V750pF @ 16V710mW-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
NTMD2C02R2G
NTMD2C02R2G
Leadtime
2-3 weeks
ON SemiconductorMOSFET N/P-CH 20V 8SOICTape & Reel (TR)-ObsoleteN and P-ChannelLogic Level Gate20V5.2A, 3.4A43 mOhm @ 4A, 4.5V1.2V @ 250µA20nC @ 4.5V1100pF @ 10V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
NTHD4102PT1G
NTHD4102PT1G
3000+0.16549
6000+0.154814
15000+0.144137
30000+0.136657
Increments of 3000
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2P-CH 20V 2.9A CHIPFETTape & Reel (TR)-Active2 P-Channel (Dual)Logic Level Gate20V2.9A80 mOhm @ 2.9A, 4.5V1.5V @ 250µA8.6nC @ 4.5V750pF @ 16V1.1W-55°C ~ 150°C (TJ)Surface Mount8-SMD, Flat LeadChipFET™
MMDF2N02ER2G
MMDF2N02ER2G
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2N-CH 25V 3.6A 8-SOICTape & Reel (TR)-Obsolete2 N-Channel (Dual)Logic Level Gate25V3.6A100 mOhm @ 2.2A, 10V3V @ 250µA30nC @ 10V532pF @ 16V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
MMDF2P02HDR2G
MMDF2P02HDR2G
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2P-CH 20V 3.3A 8-SOICTape & Reel (TR)-Obsolete2 P-Channel (Dual)Logic Level Gate20V3.3A160 mOhm @ 2A, 10V2V @ 250µA20nC @ 10V588pF @ 16V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
MMDF2C03HDR2G
MMDF2C03HDR2G
Leadtime
2-3 weeks
ON SemiconductorMOSFET N/P-CH 30V 4.1A/3A 8SOICTape & Reel (TR)-ObsoleteN and P-ChannelLogic Level Gate30V4.1A, 3A70 mOhm @ 3A, 10V3V @ 250µA16nC @ 10V630pF @ 24V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
TPCF8201(TE85L,F,M
TPCF8201(TE85L,F,M
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 20V 3A VS-8Tape & Reel (TR)-Obsolete2 N-Channel (Dual)Logic Level Gate20V3A49 mOhm @ 1.5A, 4.5V1.2V @ 200µA7.5nC @ 5V590pF @ 10V330mW150°C (TJ)Surface Mount8-SMD, Flat LeadVS-8 (2.9x1.9)
TPCF8201(TE85L,F,M-Cut
TPCF8201(TE85L,F,M
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 20V 3A VS-8Cut Tape (CT)-Obsolete2 N-Channel (Dual)Logic Level Gate20V3A49 mOhm @ 1.5A, 4.5V1.2V @ 200µA7.5nC @ 5V590pF @ 10V330mW150°C (TJ)Surface Mount8-SMD, Flat LeadVS-8 (2.9x1.9)
TPCF8402(TE85L,F,M
TPCF8402(TE85L,F,M
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET N/P-CH 30V 4A/3.2A VS-8Tape & Reel (TR)-ObsoleteN and P-ChannelLogic Level Gate30V4A, 3.2A50 mOhm @ 2A, 10V2V @ 1mA10nC @ 10V470pF @ 10V330mW150°C (TJ)Surface Mount8-SMD, Flat LeadVS-8 (2.9x1.9)
TPC8207(TE12L,Q)
TPC8207(TE12L,Q)
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 20V 6A 8-SOPTape & Reel (TR)-Obsolete2 N-Channel (Dual)Logic Level Gate20V6A20 mOhm @ 4.8A, 4V1.2V @ 200µA22nC @ 5V2010pF @ 10V450mW150°C (TJ)Surface Mount8-SOIC (0.173", 4.40mm Width)8-SOP (5.5x6.0)