ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
SSM6N44FE,LM
SSM6N44FE,LM
4000+0.0782353
8000+0.0704118
12000+0.0625882
28000+0.0586765
Increments of 4000
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 30V 0.1A ES6Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate30V100mA4 Ohm @ 10mA, 4V1.5V @ 100µA-8.5pF @ 3V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)
SSM6N36FE,LM
SSM6N36FE,LM
4000+0.0784314
Increments of 4000
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 20V 0.5A ES6Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate20V500mA630 mOhm @ 200mA, 5V1V @ 1mA1.23nC @ 4V46pF @ 10V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)
SSM6N35FE,LM
SSM6N35FE,LM
4000+0.0720588
8000+0.0648529
12000+0.0576471
28000+0.054049
100000+0.0468431
Increments of 4000
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 20V 0.18A ES6Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate20V180mA3 Ohm @ 50mA, 4V1V @ 1mA-9.5pF @ 3V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)
SSM6L36FE,LM
SSM6L36FE,LM
4000+0.0823529
8000+0.0741176
12000+0.0658823
28000+0.0617647
Increments of 4000
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET N/P-CH 20V 0.5A/0.33A ES6Tape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate20V500mA, 330mA630 mOhm @ 200mA, 5V1V @ 1mA1.23nC @ 4V46pF @ 10V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)
SSM6L35FE,LM
SSM6L35FE,LM
4000+0.12399
8000+0.11648
12000+0.108961
28000+0.0999412
Increments of 4000
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET N/P-CH 20V 0.18A/0.1A ES6Tape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate20V180mA, 100mA3 Ohm @ 50mA, 4V1V @ 1mA-9.5pF @ 3V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)
FDMS7700S-Cut
FDMS7700S
1+2.02941
10+1.82255
100+1.46529
500+1.20384
1000+0.99748
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 12A/22A POWER56Cut Tape (CT)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate30V12A, 22A7.5 mOhm @ 12A, 10V3V @ 250µA28nC @ 10V1750pF @ 15V1W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFNPower56
FDMS7600AS-Cut
FDMS7600AS
1+2.22549
10+1.9951
100+1.60353
500+1.31741
1000+1.09157
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 12A/22A POWER56Cut Tape (CT)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate30V12A, 22A7.5 mOhm @ 12A, 10V3V @ 250µA28nC @ 10V1750pF @ 15V1W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFNPower56
FDMS7700S
FDMS7700S
3000+0.901637
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 12A/22A POWER56Tape & Reel (TR)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate30V12A, 22A7.5 mOhm @ 12A, 10V3V @ 250µA28nC @ 10V1750pF @ 15V1W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFNPower56
FDMS7600AS
FDMS7600AS
3000+0.986696
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 12A/22A POWER56Tape & Reel (TR)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate30V12A, 22A7.5 mOhm @ 12A, 10V3V @ 250µA28nC @ 10V1750pF @ 15V1W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFNPower56
STS8DN3LLH5-Cut
STS8DN3LLH5
1+1.47059
10+1.31373
100+1.02422
500+0.846118
1000+0.66799
Increments of 1
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2N-CH 30V 10A 8SOCut Tape (CT)STripFET™ VActive2 N-Channel (Dual)Logic Level Gate30V10A19 mOhm @ 5A, 10V1V @ 250µA5.4nC @ 4.5V724pF @ 25V2.7W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
STS8DN3LLH5
STS8DN3LLH5
2500+0.605294
5000+0.575029
Increments of 2500
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2N-CH 30V 10A 8SOTape & Reel (TR)STripFET™ VActive2 N-Channel (Dual)Logic Level Gate30V10A19 mOhm @ 5A, 10V1V @ 250µA5.4nC @ 4.5V724pF @ 25V2.7W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
BSO220N03MD G-Cut
BSO220N03MD G
1+0.627451
10+0.54902
100+0.420588
500+0.33251
1000+0.266
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 30V 6A 8DSOCut Tape (CT)OptiMOS™Active2 N-Channel (Dual)Logic Level Gate30V6A22 mOhm @ 7.7A, 10V2.1V @ 250µA10nC @ 10V800pF @ 15V1.4W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)PG-DSO-8
BSC750N10ND G-Cut
BSC750N10ND G
1+1.32353
10+1.18235
100+0.921569
500+0.761314
1000+0.601029
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 100V 3.2A 8TDSONCut Tape (CT)OptiMOS™Active2 N-Channel (Dual)Standard100V3.2A75 mOhm @ 13A, 10V4V @ 12µA11nC @ 10V720pF @ 50V26W-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFNPG-TDSON-8
BSC150N03LD G-Cut
BSC150N03LD G
1+0.901961
10+0.793137
100+0.607843
500+0.480529
1000+0.384422
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 30V 8A 8TDSONCut Tape (CT)OptiMOS™Active2 N-Channel (Dual)Logic Level Gate30V8A15 mOhm @ 20A, 10V2.2V @ 250µA13.2nC @ 10V1100pF @ 15V26W-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFNPG-TDSON-8
BSC072N03LD G-Cut
BSC072N03LD G
1+1.11765
10+0.996078
100+0.776275
500+0.641235
1000+0.506235
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 30V 11.5A 8TDSONCut Tape (CT)OptiMOS™Active2 N-Channel (Dual)Logic Level Gate30V11.5A7.2 mOhm @ 20A, 10V2.2V @ 250µA41nC @ 10V3500pF @ 15V57W-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFNPG-TDSON-8
IRF7351PBF
IRF7351PBF
1+1.59804
10+1.42843
100+1.11373
500+0.920039
1000+0.726353
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 60V 8A 8-SOICTubeHEXFET®Not For New Designs2 N-Channel (Dual)Logic Level Gate60V8A17.8 mOhm @ 8A, 10V4V @ 50µA36nC @ 10V1330pF @ 30V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMN2016UTS-13-Cut
DMN2016UTS-13
1+0.607843
10+0.516667
100+0.38598
500+0.303235
1000+0.234324
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 20V 8.58A 8-TSSOPCut Tape (CT)-Active2 N-Channel (Dual) Common DrainLogic Level Gate20V8.58A14.5 mOhm @ 9.4A, 4.5V1V @ 250µA16.5nC @ 4.5V1495pF @ 10V880mW-55°C ~ 150°C (TJ)Surface Mount8-TSSOP (0.173", 4.40mm Width)8-TSSOP
DMN2016UTS-13
DMN2016UTS-13
2500+0.207431
5000+0.194049
12500+0.180667
25000+0.171294
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 20V 8.58A 8-TSSOPTape & Reel (TR)-Active2 N-Channel (Dual) Common DrainLogic Level Gate20V8.58A14.5 mOhm @ 9.4A, 4.5V1V @ 250µA16.5nC @ 4.5V1495pF @ 10V880mW-55°C ~ 150°C (TJ)Surface Mount8-TSSOP (0.173", 4.40mm Width)8-TSSOP
IRF7351TRPBF-Cut
IRF7351TRPBF
1+1.37255
10+1.22647
100+0.95598
500+0.789706
1000+0.623451
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 60V 8A 8-SOICCut Tape (CT)HEXFET®Active2 N-Channel (Dual)Logic Level Gate60V8A17.8 mOhm @ 8A, 10V4V @ 50µA36nC @ 10V1330pF @ 30V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7351TRPBF
IRF7351TRPBF
4000+0.608755
8000+0.578314
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 60V 8A 8-SOICTape & Reel (TR)HEXFET®Active2 N-Channel (Dual)Logic Level Gate60V8A17.8 mOhm @ 8A, 10V4V @ 50µA36nC @ 10V1330pF @ 30V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
NTJD5121NT2G
NTJD5121NT2G
3000+0.0833824
6000+0.0787549
15000+0.0718039
30000+0.0671667
75000+0.0602255
Increments of 3000
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2N-CH 60V 0.295A SOT363Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate60V295mA1.6 Ohm @ 500mA, 10V2.5V @ 250µA0.9nC @ 4.5V26pF @ 20V250mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SC-88/SC70-6/SOT-363
DMN2040LTS-13
DMN2040LTS-13
2500+0.159559
5000+0.149265
12500+0.138971
25000+0.131765
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 20V 6.7A 8TSSOPTape & Reel (TR)-Active2 N-Channel (Dual) Common DrainLogic Level Gate20V6.7A26 mOhm @ 6A, 4.5V1.2V @ 250µA5.2nC @ 4.5V570pF @ 10V890mW-55°C ~ 150°C (TJ)Surface Mount8-TSSOP (0.173", 4.40mm Width)8-TSSOP
DMN2040LTS-13-Cut
DMN2040LTS-13
1+0.460784
10+0.398039
100+0.296863
500+0.233275
1000+0.180255
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 20V 6.7A 8TSSOPCut Tape (CT)-Active2 N-Channel (Dual) Common DrainLogic Level Gate20V6.7A26 mOhm @ 6A, 4.5V1.2V @ 250µA5.2nC @ 4.5V570pF @ 10V890mW-55°C ~ 150°C (TJ)Surface Mount8-TSSOP (0.173", 4.40mm Width)8-TSSOP
DMG4800LSD-13
DMG4800LSD-13
2500+0.191471
5000+0.179118
12500+0.166765
25000+0.158118
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 30V 7.5A 8SOTape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate30V7.5A16 mOhm @ 9A, 10V1.6V @ 250µA8.56nC @ 5V798pF @ 10V1.17W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
DMG4800LSD-13-Cut
DMG4800LSD-13
1+0.558824
10+0.477451
100+0.356275
500+0.279922
1000+0.216304
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 30V 7.5A 8SOCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate30V7.5A16 mOhm @ 9A, 10V1.6V @ 250µA8.56nC @ 5V798pF @ 10V1.17W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP