ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
DMN4034SSD-13-Cut
DMN4034SSD-13
1+0.872549
10+0.769608
100+0.590196
500+0.466529
1000+0.373226
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 40V 4.8A 8SOCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate40V4.8A34 mOhm @ 6A, 10V3V @ 250µA18nC @ 10V453pF @ 20V1.8W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMN4027SSD-13-Cut
DMN4027SSD-13
1+0.872549
10+0.769608
100+0.590196
500+0.466529
1000+0.373226
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 40V 5.4A 8SOCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate40V5.4A27 mOhm @ 7A, 10V3V @ 250µA12.9nC @ 10V604pF @ 20V1.8W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMP4050SSD-13
DMP4050SSD-13
2500+0.374706
5000+0.355971
12500+0.342588
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2P-CH 40V 4A 8SOTape & Reel (TR)-Active2 P-Channel (Dual)Standard40V4A50 mOhm @ 6A, 10V3V @ 250µA13.9nC @ 10V674pF @ 20V1.8W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
DMN6066SSD-13
DMN6066SSD-13
2500+0.358235
5000+0.333529
12500+0.321176
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 60V 3.3A 8SOTape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate60V3.3A66 mOhm @ 4.5A, 10V3V @ 250µA10.3nC @ 10V502pF @ 30V1.8W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
DMN4034SSD-13
DMN4034SSD-13
2500+0.328382
5000+0.305735
12500+0.294412
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 40V 4.8A 8SOTape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate40V4.8A34 mOhm @ 6A, 10V3V @ 250µA18nC @ 10V453pF @ 20V1.8W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
DMN4027SSD-13
DMN4027SSD-13
2500+0.328382
5000+0.305735
12500+0.294412
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 40V 5.4A 8SOTape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate40V5.4A27 mOhm @ 7A, 10V3V @ 250µA12.9nC @ 10V604pF @ 20V1.8W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
DMN2400UV-7
DMN2400UV-7
3000+0.101912
6000+0.0962549
15000+0.0877549
30000+0.082098
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 20V 1.33A SOT563Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate20V1.33A480 mOhm @ 200mA, 5V900mV @ 250µA0.5nC @ 4.5V36pF @ 16V530mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
DMN2400UV-7-Cut
DMN2400UV-7
1+0.470588
10+0.355882
100+0.221569
500+0.151627
1000+0.116637
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 20V 1.33A SOT563Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate20V1.33A480 mOhm @ 200mA, 5V900mV @ 250µA0.5nC @ 4.5V36pF @ 16V530mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
DMG1024UV-7-Cut
DMG1024UV-7
1+0.401961
10+0.323529
100+0.220588
500+0.165412
1000+0.124059
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 20V 1.38A SOT563Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate20V1.38A450 mOhm @ 600mA, 4.5V1V @ 250µA0.74nC @ 4.5V60.67pF @ 16V530mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
DMG1023UV-7-Cut
DMG1023UV-7
1+0.401961
10+0.323529
100+0.220588
500+0.165412
1000+0.124059
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2P-CH 20V 1.03A SOT563Cut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate20V1.03A750 mOhm @ 430mA, 4.5V1V @ 250µA0.62nC @ 4.5V59.76pF @ 16V530mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
DMG1024UV-7
DMG1024UV-7
3000+0.110402
6000+0.103716
15000+0.0970196
30000+0.0889902
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 20V 1.38A SOT563Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate20V1.38A450 mOhm @ 600mA, 4.5V1V @ 250µA0.74nC @ 4.5V60.67pF @ 16V530mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
DMG1023UV-7
DMG1023UV-7
3000+0.110402
6000+0.103716
15000+0.0970196
30000+0.0889902
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2P-CH 20V 1.03A SOT563Tape & Reel (TR)-Active2 P-Channel (Dual)Logic Level Gate20V1.03A750 mOhm @ 430mA, 4.5V1V @ 250µA0.62nC @ 4.5V59.76pF @ 16V530mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
BSS84V-7-Cut
BSS84V-7
1+0.460784
10+0.373529
100+0.25451
500+0.190863
1000+0.143137
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2P-CH 50V 0.13A SOT-563Cut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate50V130mA10 Ohm @ 100mA, 5V2V @ 1mA-45pF @ 25V150mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
SSM6P41FE(TE85L,F)-Cut
SSM6P41FE(TE85L,F)
1+0.45098
10+0.351961
25+0.296471
100+0.241176
250+0.199882
Increments of 1
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2P-CH 20V 0.72A ES6Cut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate20V720mA300 mOhm @ 400mA, 4.5V1V @ 1mA1.76nC @ 4.5V110pF @ 10V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)
SSM6P35FE(TE85L,F)-Cut
SSM6P35FE(TE85L,F)
1+0.519608
10+0.405882
25+0.341961
100+0.278333
250+0.230627
Increments of 1
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2P-CH 20V 0.1A ES6Cut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate20V100mA8 Ohm @ 50mA, 4V1V @ 1mA-12.2pF @ 3V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)
SSM6P15FE(TE85L,F)-Cut
SSM6P15FE(TE85L,F)
1+0.490196
10+0.346078
25+0.283922
100+0.227059
250+0.165098
Increments of 1
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2P-CH 30V 0.1A ES6Cut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate30V100mA12 Ohm @ 10mA, 4V1.7V @ 100µA-9.1pF @ 3V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)
SSM6N44FE,LM-Cut
SSM6N44FE,LM
1+0.5
10+0.362745
25+0.281961
100+0.213529
250+0.151098
Increments of 1
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 30V 0.1A ES6Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate30V100mA4 Ohm @ 10mA, 4V1.5V @ 100µA-8.5pF @ 3V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)
SSM6N36FE,LM-Cut
SSM6N36FE,LM
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 20V 0.5A ES6Cut Tape (CT)-2 N-Channel (Dual)Logic Level Gate20V500mA630 mOhm @ 200mA, 5V1V @ 1mA1.23nC @ 4V46pF @ 10V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)
SSM6N35FE,LM-Cut
SSM6N35FE,LM
1+0.460784
10+0.334314
25+0.259608
100+0.196667
250+0.139176
Increments of 1
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 20V 0.18A ES6Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate20V180mA3 Ohm @ 50mA, 4V1V @ 1mA-9.5pF @ 3V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)
SSM6L36FE,LM-Cut
SSM6L36FE,LM
1+0.529412
10+0.381373
25+0.296863
100+0.224804
250+0.159059
Increments of 1
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET N/P-CH 20V 0.5A/0.33A ES6Cut Tape (CT)-ActiveN and P-ChannelLogic Level Gate20V500mA, 330mA630 mOhm @ 200mA, 5V1V @ 1mA1.23nC @ 4V46pF @ 10V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)
SSM6L35FE,LM-Cut
SSM6L35FE,LM
1+0.509804
10+0.398039
25+0.335686
100+0.273235
250+0.226431
Increments of 1
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET N/P-CH 20V 0.18A/0.1A ES6Cut Tape (CT)-ActiveN and P-ChannelLogic Level Gate20V180mA, 100mA3 Ohm @ 50mA, 4V1V @ 1mA-9.5pF @ 3V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)
SSM6P41FE(TE85L,F)
SSM6P41FE(TE85L,F)
4000+0.110402
8000+0.103716
12000+0.0970196
28000+0.0889902
Increments of 4000
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2P-CH 20V 0.72A ES6Tape & Reel (TR)-Active2 P-Channel (Dual)Logic Level Gate20V720mA300 mOhm @ 400mA, 4.5V1V @ 1mA1.76nC @ 4.5V110pF @ 10V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)
SSM6P36FE,LM
SSM6P36FE,LM
4000+0.0823529
Increments of 4000
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2P-CH 20V 0.33A ES6Tape & Reel (TR)-Active2 P-Channel (Dual)Logic Level Gate20V330mA1.31 Ohm @ 100mA, 4.5V1V @ 1mA1.2nC @ 4V43pF @ 10V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)
SSM6P35FE(TE85L,F)
SSM6P35FE(TE85L,F)
4000+0.127392
8000+0.119667
12000+0.111951
28000+0.102686
Increments of 4000
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2P-CH 20V 0.1A ES6Tape & Reel (TR)-Active2 P-Channel (Dual)Logic Level Gate20V100mA8 Ohm @ 50mA, 4V1V @ 1mA-12.2pF @ 3V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)
SSM6P15FE(TE85L,F)
SSM6P15FE(TE85L,F)
4000+0.089549
8000+0.0845784
12000+0.0771176
28000+0.0721373
Increments of 4000
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2P-CH 30V 0.1A ES6Tape & Reel (TR)-Active2 P-Channel (Dual)Logic Level Gate30V100mA12 Ohm @ 10mA, 4V1.7V @ 100µA-9.1pF @ 3V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6 (1.6x1.6)