ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
SI1035X-T1-GE3
SI1035X-T1-GE3
3000+0.159559
6000+0.149265
15000+0.138971
30000+0.131765
Increments of 3000
Leadtime
2-3 weeks
Vishay SiliconixMOSFET N/P-CH 20V SC-89Tape & Reel (TR)TrenchFET®ActiveN and P-ChannelLogic Level Gate20V180mA, 145mA5 Ohm @ 200mA, 4.5V400mV @ 250µA (Min)0.75nC @ 4.5V-250mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SC-89-6
SI1025X-T1-GE3
SI1025X-T1-GE3
3000+0.17552
6000+0.164196
15000+0.152873
30000+0.144941
Increments of 3000
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 60V 0.19A SC-89Tape & Reel (TR)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate60V190mA4 Ohm @ 500mA, 10V3V @ 250µA1.7nC @ 15V23pF @ 25V250mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SC-89-6
IRF7910TRPBF-Cut
IRF7910TRPBF
1+1.31373
10+1.17255
100+0.91451
500+0.755451
1000+0.596412
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 12V 10A 8SOICCut Tape (CT)HEXFET®Active2 N-Channel (Dual)Logic Level Gate12V10A15 mOhm @ 8A, 4.5V2V @ 250µA26nC @ 4.5V1730pF @ 6V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7907TRPBF-Cut
IRF7907TRPBF
1+0.960784
10+0.855882
100+0.667255
500+0.551196
1000+0.435147
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 30V 9.1A/11A 8-SOICCut Tape (CT)HEXFET®Active2 N-Channel (Dual)Logic Level Gate30V9.1A, 11A16.4 mOhm @ 9.1A, 10V2.35V @ 25µA10nC @ 4.5V850pF @ 15V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7905TRPBF-Cut
IRF7905TRPBF
1+0.882353
10+0.792157
100+0.617451
500+0.510098
1000+0.402706
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 30V 7.8A/8.9A 8SOICCut Tape (CT)HEXFET®Active2 N-Channel (Dual)Logic Level Gate30V7.8A, 8.9A21.8 mOhm @ 7.8A, 10V2.25V @ 25µA6.9nC @ 4.5V600pF @ 15V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7904TRPBF-Cut
IRF7904TRPBF
1+0.882353
10+0.788235
100+0.61451
500+0.507667
1000+0.400794
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 30V 7.6A/11A 8-SOICCut Tape (CT)HEXFET®Active2 N-Channel (Dual)Logic Level Gate30V7.6A, 11A16.2 mOhm @ 7.6A, 10V2.25V @ 25µA11nC @ 4.5V910pF @ 15V1.4W, 2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7902TRPBF-Cut
IRF7902TRPBF
1+0.960784
10+0.847059
100+0.649216
500+0.513177
1000+0.410549
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 30V 6.4A/9.7A 8SOICCut Tape (CT)HEXFET®Active2 N-Channel (Dual)Logic Level Gate30V6.4A, 9.7A22.6 mOhm @ 6.4A, 10V2.25V @ 25µA6.9nC @ 4.5V580pF @ 15V1.4W, 2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF7507TRPBF-Cut
IRF7507TRPBF
1+0.598039
10+0.52451
100+0.402353
500+0.318098
1000+0.254471
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET N/P-CH 20V 1.7A MICRO8Cut Tape (CT)HEXFET®ActiveN and P-ChannelLogic Level Gate20V2.4A, 1.7A140 mOhm @ 1.7A, 4.5V700mV @ 250µA8nC @ 4.5V260pF @ 15V1.25W-55°C ~ 150°C (TJ)Surface Mount8-TSSOP, 8-MSOP (0.118", 3.00mm Width)Micro8™
IRF7506TRPBF-Cut
IRF7506TRPBF
1+0.705882
10+0.619608
100+0.474804
500+0.375353
1000+0.300274
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 30V 1.7A MICRO8Cut Tape (CT)HEXFET®Active2 P-Channel (Dual)Logic Level Gate30V1.7A270 mOhm @ 1.2A, 10V1V @ 250µA11nC @ 10V180pF @ 25V1.25W-55°C ~ 150°C (TJ)Surface Mount8-TSSOP, 8-MSOP (0.118", 3.00mm Width)Micro8™
IRF7380TRPBF-Cut
IRF7380TRPBF
1+0.980392
10+0.87549
100+0.682843
500+0.564078
1000+0.445324
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 80V 3.6A 8-SOICCut Tape (CT)HEXFET®Active2 N-Channel (Dual)Logic Level Gate80V3.6A73 mOhm @ 2.2A, 10V4V @ 250µA23nC @ 10V660pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
STL15DN4F5-Cut
STL15DN4F5
1+2.72549
10+2.44412
100+1.9648
500+1.61429
1000+1.33756
Increments of 1
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2N-CH 40V 60A POWERFLATCut Tape (CT)STripFET™ VActive2 N-Channel (Dual)Logic Level Gate40V60A9 mOhm @ 7.5A, 10V4V @ 250µA25nC @ 10V1550pF @ 25V60W-55°C ~ 175°C (TJ)Surface Mount8-PowerVDFNPowerFlat™ (5x6)
STS1DN45K3-Cut
STS1DN45K3
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2N-CH 450V 0.5A 8SOICCut Tape (CT)SuperMESH3™Obsolete2 N-Channel (Dual)Standard450V500mA3.8 Ohm @ 500mA, 10V4.5V @ 50µA6nC @ 10V150pF @ 25V1.3W150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
STL15DN4F5
STL15DN4F5
3000+1.20905
Increments of 3000
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2N-CH 40V 60A POWERFLATTape & Reel (TR)STripFET™ VActive2 N-Channel (Dual)Logic Level Gate40V60A9 mOhm @ 7.5A, 10V4V @ 250µA25nC @ 10V1550pF @ 25V60W-55°C ~ 175°C (TJ)Surface Mount8-PowerVDFNPowerFlat™ (5x6)
STS1DN45K3
STS1DN45K3
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2N-CH 450V 0.5A 8SOICTape & Reel (TR)SuperMESH3™Obsolete2 N-Channel (Dual)Standard450V500mA3.8 Ohm @ 500mA, 10V4.5V @ 50µA6nC @ 10V150pF @ 25V1.3W150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
ALD1115MAL
ALD1115MAL
50+2.05882
Increments of 50
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET N/P-CH 10.6V 8MSOPTube-ActiveN and P-Channel ComplementaryStandard10.6V-1800 Ohm @ 5V1V @ 1µA-3pF @ 5V500mW0°C ~ 70°C (TJ)Surface Mount8-TSSOP, 8-MSOP (0.118", 3.00mm Width)8-MSOP
ALD1110ESAL
ALD1110ESAL
50+3.18588
Increments of 50
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET 2N-CH 10V 8SOICTubeEPAD®Active2 N-Channel (Dual) Matched PairStandard10V-500 Ohm @ 5V1.01V @ 1µA-2.5pF @ 5V600mW0°C ~ 70°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
ALD1110EPAL
ALD1110EPAL
50+3.18588
Increments of 50
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET 2N-CH 10V 8DIPTubeEPAD®Active2 N-Channel (Dual) Matched PairStandard10V-500 Ohm @ 5V1.01V @ 1µA-2.5pF @ 5V600mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
ALD1108ESCL
ALD1108ESCL
50+3.00765
Increments of 50
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET 4N-CH 10V 16SOICTubeEPAD®Active4 N-Channel, Matched PairStandard10V-500 Ohm @ 5V1.01V @ 1µA-25pF @ 5V600mW0°C ~ 70°C (TJ)Surface Mount16-SOIC (0.154", 3.90mm Width)16-SOIC
ALD1108EPCL
ALD1108EPCL
50+3.00765
Increments of 50
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET 4N-CH 10V 16DIPTubeEPAD®Active4 N-Channel, Matched PairStandard10V-500 Ohm @ 5V1.01V @ 1µA-25pF @ 5V600mW0°C ~ 70°C (TJ)Through Hole16-DIP (0.300", 7.62mm)16-PDIP
ALD1102BPAL
ALD1102BPAL
50+3.45333
Increments of 50
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET 2P-CH 10.6V 8DIPTube-Active2 P-Channel (Dual) Matched PairStandard10.6V-270 Ohm @ 5V1.2V @ 10µA-10pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
ALD1101BPAL
ALD1101BPAL
50+3.45333
Increments of 50
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET 2N-CH 10.6V 8DIPTube-Active2 N-Channel (Dual) Matched PairStandard10.6V-75 Ohm @ 5V1V @ 10µA--500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
ALD114935SAL
ALD114935SAL
1+2.94118
10+2.62451
25+2.36157
100+2.15167
250+1.94176
Increments of 1
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET 2N-CH 10.6V 8SOICTubeEPAD®Active2 N-Channel (Dual) Matched PairDepletion Mode10.6V12mA, 3mA540 Ohm @ 0V3.45V @ 1µA-2.5pF @ 5V500mW0°C ~ 70°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
ALD114935PAL
ALD114935PAL
50+2.36157
Increments of 50
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET 2N-CH 10.6V 8DIPTubeEPAD®Active2 N-Channel (Dual) Matched PairDepletion Mode10.6V12mA, 3mA540 Ohm @ 0V3.45V @ 1µA-2.5pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
ALD114913SAL
ALD114913SAL
1+2.98039
10+2.68922
25+2.40118
100+2.16108
250+1.92098
Increments of 1
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET 2N-CH 10.6V 8SOICTubeEPAD®Active2 N-Channel (Dual) Matched PairDepletion Mode10.6V12mA, 3mA500 Ohm @ 2.7V1.26V @ 1µA-2.5pF @ 5V500mW0°C ~ 70°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
ALD114913PAL
ALD114913PAL
50+2.40118
Increments of 50
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET 2N-CH 10.6V 8DIPTubeEPAD®Active2 N-Channel (Dual) Matched PairDepletion Mode10.6V12mA, 3mA500 Ohm @ 2.7V1.26V @ 1µA-2.5pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP