ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
SI7997DP-T1-GE3-Cut
SI7997DP-T1-GE3
1+2.22549
10+1.9951
25+1.88196
100+1.60353
250+1.50561
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 30V 60A PPAK SO-8Cut Tape (CT)TrenchFET®Active2 P-Channel (Dual)Standard30V60A5.5 mOhm @ 20A, 10V2.2V @ 250µA160nC @ 10V6200pF @ 15V46W-55°C ~ 150°C (TJ)Surface MountPowerPAK® SO-8 DualPowerPAK® SO-8 Dual
SI7956DP-T1-GE3-Cut
SI7956DP-T1-GE3
1+3.20588
10+2.87647
25+2.71961
100+2.35706
250+2.23616
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 150V 2.6A PPAK SO-8Cut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate150V2.6A105 mOhm @ 4.1A, 10V4V @ 250µA26nC @ 10V-1.4W-55°C ~ 150°C (TJ)Surface MountPowerPAK® SO-8 DualPowerPAK® SO-8 Dual
SI7949DP-T1-GE3-Cut
SI7949DP-T1-GE3
1+1.65686
10+1.48922
25+1.40471
100+1.19696
250+1.12392
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 60V 3.2A PPAK SO-8Cut Tape (CT)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate60V3.2A64 mOhm @ 5A, 10V3V @ 250µA40nC @ 10V-1.5W-55°C ~ 150°C (TJ)Surface MountPowerPAK® SO-8 DualPowerPAK® SO-8 Dual
SI7938DP-T1-GE3-Cut
SI7938DP-T1-GE3
1+1.56863
10+1.4049
25+1.32549
100+1.12922
250+1.06031
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 40V 60A PPAK SO-8Cut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Standard40V60A5.8 mOhm @ 18.5A, 10V2.5V @ 250µA65nC @ 10V2300pF @ 20V46W-55°C ~ 150°C (TJ)Surface MountPowerPAK® SO-8 DualPowerPAK® SO-8 Dual
SI7923DN-T1-GE3-Cut
SI7923DN-T1-GE3
1+1.55882
10+1.39118
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 30V 4.3A 1212-8Cut Tape (CT)TrenchFET®2 P-Channel (Dual)Logic Level Gate30V4.3A47 mOhm @ 6.4A, 10V3V @ 250µA21nC @ 10V-1.3W-55°C ~ 150°C (TJ)Surface MountPowerPAK® 1212-8 DualPowerPAK® 1212-8 Dual
SI7913DN-T1-GE3-Cut
SI7913DN-T1-GE3
1+1.65686
10+1.48922
25+1.40471
100+1.19696
250+1.12392
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 20V 5A PPAK 1212-8Cut Tape (CT)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate20V5A37 mOhm @ 7.4A, 4.5V1V @ 250µA24nC @ 4.5V-1.3W-55°C ~ 150°C (TJ)Surface MountPowerPAK® 1212-8 DualPowerPAK® 1212-8 Dual
SI7900AEDN-T1-GE3-Cut
SI7900AEDN-T1-GE3
1+1.18627
10+1.06373
25+1.00941
100+0.829118
250+0.775059
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8Cut Tape (CT)TrenchFET®Active2 N-Channel (Dual) Common DrainLogic Level Gate20V6A26 mOhm @ 8.5A, 4.5V900mV @ 250µA16nC @ 4.5V-1.5W-55°C ~ 150°C (TJ)Surface MountPowerPAK® 1212-8 DualPowerPAK® 1212-8 Dual
SI7872DP-T1-GE3-Cut
SI7872DP-T1-GE3
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 6.4A PPAK SO-8Cut Tape (CT)LITTLE FOOT®2 N-Channel (Half Bridge)Logic Level Gate30V6.4A22 mOhm @ 7.5A, 10V3V @ 250µA11nC @ 4.5V-1.4W-55°C ~ 150°C (TJ)Surface MountPowerPAK® SO-8 DualPowerPAK® SO-8 Dual
SI7288DP-T1-GE3-Cut
SI7288DP-T1-GE3
1+1.53922
10+1.37647
25+1.30627
100+1.07304
250+1.00302
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 40V 20A PPAK SO-8Cut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Standard40V20A19 mOhm @ 10A, 10V2.8V @ 250µA15nC @ 10V565pF @ 20V15.6W-55°C ~ 150°C (TJ)Surface MountPowerPAK® SO-8 DualPowerPAK® SO-8 Dual
SI7272DP-T1-GE3-Cut
SI7272DP-T1-GE3
1+1.5
10+1.3451
25+1.27647
100+1.04863
250+0.980235
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 25A PPAK SO-8Cut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate30V25A9.3 mOhm @ 15A, 10V2.5V @ 250µA26nC @ 10V1100pF @ 15V22W-55°C ~ 150°C (TJ)Surface MountPowerPAK® SO-8 DualPowerPAK® SO-8 Dual
SI7236DP-T1-GE3-Cut
SI7236DP-T1-GE3
1+3.08824
10+2.77549
25+2.62431
100+2.27431
250+2.15769
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 20V 60A PPAK SO-8Cut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Standard20V60A5.2 mOhm @ 20.7A, 4.5V1.5V @ 250µA105nC @ 10V4000pF @ 10V46W-55°C ~ 150°C (TJ)Surface MountPowerPAK® SO-8 DualPowerPAK® SO-8 Dual
SI7232DN-T1-GE3-Cut
SI7232DN-T1-GE3
1+0.911765
10+0.804902
25+0.756078
100+0.616961
250+0.573098
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 20V 25A PPAK 1212-8Cut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate20V25A16.4 mOhm @ 10A, 4.5V1V @ 250µA32nC @ 8V1220pF @ 10V23W-55°C ~ 150°C (TJ)Surface MountPowerPAK® 1212-8 DualPowerPAK® 1212-8 Dual
SI7212DN-T1-GE3-Cut
SI7212DN-T1-GE3
1+1.17647
10+1.04804
25+0.99451
100+0.816961
250+0.763686
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 4.9A 1212-8Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate30V4.9A36 mOhm @ 6.8A, 10V1.6V @ 250µA11nC @ 4.5V-1.3W-55°C ~ 150°C (TJ)Surface MountPowerPAK® 1212-8 DualPowerPAK® 1212-8 Dual
SI6968BEDQ-T1-GE3-Cut
SI6968BEDQ-T1-GE3
1+0.647059
10+0.556863
25+0.519608
100+0.415588
250+0.385961
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 20V 5.2A 8-TSSOPCut Tape (CT)TrenchFET®Active2 N-Channel (Dual) Common DrainLogic Level Gate20V5.2A22 mOhm @ 6.5A, 4.5V1.6V @ 250µA18nC @ 4.5V-1W-55°C ~ 150°C (TJ)Surface Mount8-TSSOP (0.173", 4.40mm Width)8-TSSOP
SI6913DQ-T1-GE3-Cut
SI6913DQ-T1-GE3
1+0.970588
10+0.863725
25+0.819216
100+0.673039
250+0.629176
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 12V 4.9A 8-TSSOPCut Tape (CT)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate12V4.9A21 mOhm @ 5.8A, 4.5V900mV @ 400µA28nC @ 4.5V-830mW-55°C ~ 150°C (TJ)Surface Mount8-TSSOP (0.173", 4.40mm Width)8-TSSOP
SI6562CDQ-T1-GE3-Cut
SI6562CDQ-T1-GE3
1+1.02941
10+0.922549
25+0.875686
100+0.719412
250+0.67251
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET N/P-CH 20V 6.7A 8-TSSOPCut Tape (CT)TrenchFET®ActiveN and P-ChannelLogic Level Gate20V6.7A, 6.1A22 mOhm @ 5.7A, 4.5V1.5V @ 250µA23nC @ 10V850pF @ 10V1.6W, 1.7W-55°C ~ 150°C (TJ)Surface Mount8-TSSOP (0.173", 4.40mm Width)8-TSSOP
SI5935CDC-T1-GE3-Cut
SI5935CDC-T1-GE3
1+0.558824
10+0.477451
25+0.44549
100+0.356275
250+0.330824
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 20V 4A 1206-8Cut Tape (CT)TrenchFET®Active2 P-Channel (Dual)Standard20V4A100 mOhm @ 3.1A, 4.5V1V @ 250µA11nC @ 5V455pF @ 10V3.1W-55°C ~ 150°C (TJ)Surface Mount8-SMD, Flat Lead1206-8 ChipFET™
SI5933CDC-T1-GE3-Cut
SI5933CDC-T1-GE3
1+0.509804
10+0.437255
25+0.408235
100+0.326569
250+0.303255
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 20V 3.7A 1206-8Cut Tape (CT)TrenchFET®Active2 P-Channel (Dual)Standard20V3.7A144 mOhm @ 2.5A, 4.5V1V @ 250µA6.8nC @ 5V276pF @ 10V2.8W-55°C ~ 150°C (TJ)Surface Mount8-SMD, Flat Lead1206-8 ChipFET™
SI5908DC-T1-GE3-Cut
SI5908DC-T1-GE3
1+1.40196
10+1.25098
25+1.18745
100+0.97549
250+0.911843
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 20V 4.4A 1206-8Cut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate20V4.4A40 mOhm @ 4.4A, 4.5V1V @ 250µA7.5nC @ 4.5V-1.1W-55°C ~ 150°C (TJ)Surface Mount8-SMD, Flat Lead1206-8 ChipFET™
SI5902BDC-T1-GE3-Cut
SI5902BDC-T1-GE3
1+1.33333
10+1.18824
25+1.12824
100+0.926667
250+0.866275
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 4A 1206-8Cut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate30V4A65 mOhm @ 3.1A, 10V3V @ 250µA7nC @ 10V220pF @ 15V3.12W-55°C ~ 150°C (TJ)Surface Mount8-SMD, Flat Lead1206-8 ChipFET™
SI5517DU-T1-GE3-Cut
SI5517DU-T1-GE3
1+1.18627
10+1.06373
25+1.00941
100+0.829118
250+0.775059
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET N/P-CH 20V 6A CHIPFETCut Tape (CT)TrenchFET®ActiveN and P-ChannelLogic Level Gate20V6A39 mOhm @ 4.4A, 4.5V1V @ 250µA16nC @ 8V520pF @ 10V8.3W-55°C ~ 150°C (TJ)Surface MountPowerPAK® ChipFET™ DualPowerPAK® ChipFet Dual
SI5515CDC-T1-GE3-Cut
SI5515CDC-T1-GE3
1+0.833333
10+0.734314
25+0.690196
100+0.563333
250+0.523255
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET N/P-CH 20V 4A 1206-8Cut Tape (CT)TrenchFET®ActiveN and P-ChannelLogic Level Gate20V4A36 mOhm @ 6A, 4.5V800mV @ 250µA11.3nC @ 5V632pF @ 10V3.1W-55°C ~ 150°C (TJ)Surface Mount8-SMD, Flat Lead1206-8 ChipFET™
SI5513CDC-T1-GE3-Cut
SI5513CDC-T1-GE3
1+0.627451
10+0.537255
25+0.501176
100+0.400784
250+0.372157
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET N/P-CH 20V 4A 1206-8Cut Tape (CT)TrenchFET®ActiveN and P-ChannelLogic Level Gate20V4A, 3.7A55 mOhm @ 4.4A, 4.5V1.5V @ 250µA4.2nC @ 5V285pF @ 10V3.1W-55°C ~ 150°C (TJ)Surface Mount8-SMD, Flat Lead1206-8 ChipFET™
SI5504BDC-T1-GE3-Cut
SI5504BDC-T1-GE3
1+1.01961
10+0.906863
25+0.860784
100+0.707255
250+0.661098
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET N/P-CH 30V 4A 1206-8Cut Tape (CT)TrenchFET®ActiveN and P-ChannelLogic Level Gate30V4A, 3.7A65 mOhm @ 3.1A, 10V3V @ 250µA7nC @ 10V220pF @ 15V3.12W, 3.1W-55°C ~ 150°C (TJ)Surface Mount8-SMD, Flat Lead1206-8 ChipFET™
SI4948BEY-T1-GE3-Cut
SI4948BEY-T1-GE3
1+1.33333
10+1.18824
25+1.12824
100+0.926667
250+0.866275
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 60V 2.4A 8-SOICCut Tape (CT)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate60V2.4A120 mOhm @ 3.1A, 10V3V @ 250µA22nC @ 10V-1.4W-55°C ~ 175°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO