ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
SI4214DY-T1-GE3
SI4214DY-T1-GE3
2500+0.248775
Increments of 2500
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 8.5A 8-SOICTape & Reel (TR)TrenchFET®Active2 N-Channel (Dual)Standard30V8.5A23.5 mOhm @ 7A, 10V2.5V @ 250µA23nC @ 10V785pF @ 15V3.1W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI4214DDY-T1-GE3
SI4214DDY-T1-GE3
2500+0.261216
5000+0.243196
12500+0.234196
Increments of 2500
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 8.5A 8-SOICTape & Reel (TR)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate30V8.5A19.5 mOhm @ 8A, 10V2.5V @ 250µA22nC @ 10V660pF @ 15V3.1W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI4210DY-T1-GE3
SI4210DY-T1-GE3
2500+0.261216
5000+0.243196
12500+0.234196
Increments of 2500
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 6.5A 8-SOICTape & Reel (TR)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate30V6.5A35.5 mOhm @ 5A, 10V2.5V @ 250µA12nC @ 10V445pF @ 15V2.7W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI3993DV-T1-GE3
SI3993DV-T1-GE3
3000+0.326961
Increments of 3000
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 30V 1.8A 6-TSOPTape & Reel (TR)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate30V1.8A133 mOhm @ 2.2A, 10V3V @ 250µA5nC @ 4.5V-830mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-66-TSOP
SI3951DV-T1-GE3
SI3951DV-T1-GE3
3000+0.326961
Increments of 3000
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 20V 2.7A 6-TSOPTape & Reel (TR)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate20V2.7A115 mOhm @ 2.5A, 4.5V1.5V @ 250µA5.1nC @ 5V250pF @ 10V2W-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-66-TSOP
SI3948DV-T1-GE3
SI3948DV-T1-GE3
3000+0.466667
Increments of 3000
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 6-TSOPTape & Reel (TR)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate30V-105 mOhm @ 2.5A, 10V1V @ 250µA (Min)3.2nC @ 5V-1.15W-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-66-TSOP
SI3590DV-T1-GE3
SI3590DV-T1-GE3
3000+0.343314
6000+0.319637
15000+0.307794
Increments of 3000
Leadtime
2-3 weeks
Vishay SiliconixMOSFET N/P-CH 30V 2.5A 6-TSOPTape & Reel (TR)TrenchFET®ActiveN and P-ChannelLogic Level Gate30V2.5A, 1.7A77 mOhm @ 3A, 4.5V1.5V @ 250µA4.5nC @ 4.5V-830mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-66-TSOP
SI1967DH-T1-E3
SI1967DH-T1-E3
3000+0.136765
Increments of 3000
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 20V 1.3A SC70-6Tape & Reel (TR)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate20V1.3A490 mOhm @ 910mA, 4.5V1V @ 250µA4nC @ 8V110pF @ 10V1.25W-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SC-70-6 (SOT-363)
SI1965DH-T1-E3
SI1965DH-T1-E3
3000+0.167157
Increments of 3000
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 12V 1.3A SC70-6Tape & Reel (TR)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate12V1.3A390 mOhm @ 1A, 4.5V1V @ 250µA4.2nC @ 8V120pF @ 6V1.25W-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SC-70-6 (SOT-363)
SI1900DL-T1-E3
SI1900DL-T1-E3
3000+0.207431
6000+0.194049
15000+0.180667
Increments of 3000
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 0.59A SC70-6Tape & Reel (TR)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate30V590mA480 mOhm @ 590mA, 10V3V @ 250µA1.4nC @ 10V-270mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SC-70-6 (SOT-363)
CSD87351Q5D-Cut
CSD87351Q5D
1+2.12745
10+1.90784
100+1.53363
500+1.25998
1000+1.04399
Increments of 1
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 30V 32A 8LSONCut Tape (CT)NexFET™Active2 N-Channel (Dual)Logic Level Gate30V32A7.6 mOhm @ 20A, 8V2.1V @ 250µA7.7nC @ 4.5V1255pF @ 15V12W-55°C ~ 150°C (TJ)Surface Mount8-PowerLDFN8-LSON (5x6)
CSD87351Q5D
CSD87351Q5D
2500+0.873775
Increments of 2500
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 30V 32A 8LSONTape & Reel (TR)NexFET™Active2 N-Channel (Dual)Logic Level Gate30V32A7.6 mOhm @ 20A, 8V2.1V @ 250µA7.7nC @ 4.5V1255pF @ 15V12W-55°C ~ 150°C (TJ)Surface Mount8-PowerLDFN8-LSON (5x6)
CSD87350Q5D-Cut
CSD87350Q5D
1+2.53922
10+2.27745
100+1.83039
500+1.50384
1000+1.24605
Increments of 1
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 30V 40A 8LSONCut Tape (CT)NexFET™Active2 N-Channel (Dual)Logic Level Gate30V40A5.9 mOhm @ 20A, 8V2.1V @ 250µA10.9nC @ 4.5V1770pF @ 15V12W-55°C ~ 150°C (TJ)Surface Mount8-PowerLDFN8-LSON (5x6)
CSD87350Q5D
CSD87350Q5D
2500+1.04289
Increments of 2500
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 30V 40A 8LSONTape & Reel (TR)NexFET™Active2 N-Channel (Dual)Logic Level Gate30V40A5.9 mOhm @ 20A, 8V2.1V @ 250µA10.9nC @ 4.5V1770pF @ 15V12W-55°C ~ 150°C (TJ)Surface Mount8-PowerLDFN8-LSON (5x6)
IRLHS6376TRPBF
IRLHS6376TRPBF
4000+0.173922
8000+0.162696
12000+0.15148
28000+0.143627
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 30V 3.6A PQFNTape & Reel (TR)HEXFET®Active2 N-Channel (Dual)Logic Level Gate30V3.6A63 mOhm @ 3.4A, 4.5V1.1V @ 10µA2.8nC @ 4.5V270pF @ 25V1.5W-55°C ~ 150°C (TJ)Surface Mount6-VDFN Exposed Pad6-PQFN (2x2)
IRF9395MTRPBF
IRF9395MTRPBF
4800+1.21078
Increments of 4800
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 30V 14A DIRECTFETTape & Reel (TR)HEXFET®Active2 P-Channel (Dual)Logic Level Gate30V14A7 mOhm @ 14A, 10V2.4V @ 50µA64nC @ 10V3241pF @ 15V2.1W-40°C ~ 150°C (TJ)Surface MountDirectFET™ Isometric MCDIRECTFET™ MC
IRF9358TRPBF
IRF9358TRPBF
4000+0.453971
8000+0.431275
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 30V 9.2A 8SOICTape & Reel (TR)HEXFET®Active2 P-Channel (Dual)Logic Level Gate30V9.2A16.3 mOhm @ 9.2A, 10V2.4V @ 25µA38nC @ 10V1740pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
IRF9358PBF
IRF9358PBF
1+1.01961
10+0.910784
100+0.710294
500+0.586765
1000+0.463235
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 30V 9.2A 8SOICTubeHEXFET®Not For New Designs2 P-Channel (Dual)Logic Level Gate30V9.2A16.3 mOhm @ 9.2A, 10V2.4V @ 25µA38nC @ 10V1740pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
AUIRF7343QTR
AUIRF7343QTR
4000+0.722647
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET N/P-CH 55V 4.7/3.4A 8SOICTape & Reel (TR)HEXFET®ActiveN and P-ChannelLogic Level Gate55V4.7A, 3.4A50 mOhm @ 4.7A, 10V1V @ 250µA36nC @ 10V740pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
FDS8935
FDS8935
2500+0.576471
5000+0.547647
Increments of 2500
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2P-CH 80V 2.1A 8SOICTape & Reel (TR)PowerTrench®Active2 P-Channel (Dual)Logic Level Gate80V2.1A183 mOhm @ 2.1A, 10V3V @ 250µA19nC @ 10V879pF @ 40V1.6W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
FDS89141
FDS89141
2500+0.662941
5000+0.629794
Increments of 2500
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 100V 3.5A 8SOICTape & Reel (TR)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate100V3.5A62 mOhm @ 3.5A, 10V4V @ 250µA7.1nC @ 10V398pF @ 50V1.6W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
ZXMN2AMCTA-Cut
ZXMN2AMCTA
1+1
10+0.894118
100+0.697451
500+0.576157
1000+0.454863
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 20V 2.9A DFNCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate20V2.9A120 mOhm @ 4A, 4.5V3V @ 250µA3.1nC @ 4.5V299pF @ 15V1.7W-55°C ~ 150°C (TJ)Surface Mount8-WDFN Exposed Pad8-DFN (3x2)
ZXMC3AMCTA-Cut
ZXMC3AMCTA
1+1
10+0.894118
100+0.697451
500+0.576157
1000+0.454863
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 30V 2.9A/2.1A 8DFNCut Tape (CT)-ActiveN and P-ChannelLogic Level Gate30V2.9A, 2.1A120 mOhm @ 2.5A, 10V3V @ 250µA3.9nC @ 10V190pF @ 25V1.7W-55°C ~ 150°C (TJ)Surface Mount8-WDFN Exposed Pad8-DFN (3x2)
ZXMN3AMCTA-Cut
ZXMN3AMCTA
1+0.911765
10+0.804902
100+0.616961
500+0.487745
1000+0.390186
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 30V 2.9A DFNCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate30V2.9A120 mOhm @ 2.5A, 10V3V @ 250µA3.9nC @ 10V190pF @ 25V1.7W-55°C ~ 150°C (TJ)Surface Mount8-WDFN Exposed Pad8-DFN (3x2)
ZXMN2AMCTA
ZXMN2AMCTA
3000+0.412176
6000+0.391569
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 20V 2.9A DFNTape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate20V2.9A120 mOhm @ 4A, 4.5V3V @ 250µA3.1nC @ 4.5V299pF @ 15V1.7W-55°C ~ 150°C (TJ)Surface Mount8-WDFN Exposed Pad8-DFN (3x2)