ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
SI4925DDY-T1-GE3-Cut
SI4925DDY-T1-GE3
1+0.882353
10+0.785294
25+0.745098
100+0.612157
250+0.572196
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 30V 8A 8-SOICCut Tape (CT)TrenchFET®Active2 P-Channel (Dual)Standard30V8A29 mOhm @ 7.3A, 10V3V @ 250µA50nC @ 10V1350pF @ 15V5W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI4532CDY-T1-GE3-Cut
SI4532CDY-T1-GE3
1+0.696078
10+0.612745
25+0.575294
100+0.469412
250+0.436039
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET N/P-CH 30V 6A 8-SOICCut Tape (CT)TrenchFET®ActiveN and P-ChannelStandard30V6A, 4.3A47 mOhm @ 3.5A, 10V3V @ 250µA9nC @ 10V305pF @ 15V2.78W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI4214DDY-T1-GE3-Cut
SI4214DDY-T1-GE3
1+0.696078
10+0.612745
25+0.575294
100+0.469412
250+0.436039
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 8.5A 8-SOICCut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate30V8.5A19.5 mOhm @ 8A, 10V2.5V @ 250µA22nC @ 10V660pF @ 15V3.1W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI4210DY-T1-GE3-Cut
SI4210DY-T1-GE3
1+0.696078
10+0.612745
25+0.575294
100+0.469412
250+0.436039
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 6.5A 8-SOICCut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate30V6.5A35.5 mOhm @ 5A, 10V2.5V @ 250µA12nC @ 10V445pF @ 15V2.7W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SIA913ADJ-T1-GE3-Cut
SIA913ADJ-T1-GE3
1+0.627451
10+0.537255
25+0.501176
100+0.400784
250+0.372157
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 12V 4.5A SC70-6Cut Tape (CT)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate12V4.5A61 mOhm @ 3.6A, 4.5V1V @ 250µA20nC @ 8V590pF @ 6V6.5W-55°C ~ 150°C (TJ)Surface MountPowerPAK® SC-70-6 DualPowerPAK® SC-70-6 Dual
SI7904BDN-T1-GE3-Cut
SI7904BDN-T1-GE3
1+1
10+0.898039
25+0.852157
100+0.699902
250+0.654235
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 20V 6A PPAK 1212-8Cut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate20V6A30 mOhm @ 7.1A, 4.5V1V @ 250µA24nC @ 8V860pF @ 10V17.8W-55°C ~ 150°C (TJ)Surface MountPowerPAK® 1212-8 DualPowerPAK® 1212-8 Dual
BSD840NH6327XTSA1-Cut
BSD840NH6327XTSA1
1+0.343137
10+0.254902
100+0.144118
500+0.0954314
1000+0.0731569
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 20V 0.88A SOT363Cut Tape (CT)OptiMOS™Active2 N-Channel (Dual)Logic Level Gate20V880mA400 mOhm @ 880mA, 2.5V750mV @ 1.6µA0.26nC @ 2.5V78pF @ 10V500mW-55°C ~ 150°C (TJ)Surface Mount6-VSSOP, SC-88, SOT-363PG-SOT363-6
BSD235NH6327XTSA1-Cut
BSD235NH6327XTSA1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 20V 0.95A SOT363Cut Tape (CT)OptiMOS™2 N-Channel (Dual)Logic Level Gate20V950mA350 mOhm @ 950mA, 4.5V1.2V @ 1.6µA0.32nC @ 4.5V63pF @ 10V500mW-55°C ~ 150°C (TJ)Surface Mount6-VSSOP, SC-88, SOT-363PG-SOT363-6
BSD235CH6327XTSA1-Cut
BSD235CH6327XTSA1
1+0.431373
10+0.32451
100+0.183529
500+0.121529
1000+0.0931667
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET N/P-CH 20V SOT363Cut Tape (CT)OptiMOS™ActiveN and P-ChannelLogic Level Gate20V950mA, 530mA350 mOhm @ 950mA, 4.5V1.2V @ 1.6µA0.34nC @ 4.5V47pF @ 10V500mW-55°C ~ 150°C (TJ)Surface Mount6-VSSOP, SC-88, SOT-363PG-SOT363-6
2N7002DWH6327XTSA1-Cut
2N7002DWH6327XTSA1
1+0.264706
10+0.216667
100+0.114804
500+0.075549
1000+0.0513726
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 60V 0.3A SOT363Cut Tape (CT)OptiMOS™Active2 N-Channel (Dual)Logic Level Gate60V300mA3 Ohm @ 500mA, 10V2.5V @ 250µA0.6nC @ 10V20pF @ 25V500mW-55°C ~ 150°C (TJ)Surface Mount6-VSSOP, SC-88, SOT-363PG-SOT363-6
BSO303P H-Cut
BSO303P H
1+1.37255
10+1.22255
100+0.953333
500+0.78749
1000+0.621706
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 30V 7A 8DSOCut Tape (CT)OptiMOS™Active2 P-Channel (Dual)Logic Level Gate30V7A21 mOhm @ 8.2A, 10V2V @ 100µA49nC @ 10V2678pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)PG-DSO-8
BSO207PHXUMA1-Cut
BSO207PHXUMA1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 20V 5A 8DSOCut Tape (CT)OptiMOS™2 P-Channel (Dual)Logic Level Gate20V5A45 mOhm @ 5.7A, 4.5V1.2V @ 44µA16nC @ 4.5V1650pF @ 15V1.6W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)PG-DSO-8
BSO203PHXUMA1-Cut
BSO203PHXUMA1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 20V 7A 8DSOCut Tape (CT)OptiMOS™2 P-Channel (Dual)Logic Level Gate20V7A21 mOhm @ 8.2A, 4.5V1.2V @ 100µA39nC @ 4.5V3750pF @ 15V1.6W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)P-DSO-8
BSO150N03MD G-Cut
BSO150N03MD G
1+0.941176
10+0.830392
100+0.636569
500+0.503216
1000+0.402578
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 30V 8A 8DSOCut Tape (CT)OptiMOS™Active2 N-Channel (Dual)Logic Level Gate30V8A15 mOhm @ 9.3A, 10V2V @ 250µA17nC @ 10V1300pF @ 15V1.4W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)PG-DSO-8
SIZ710DT-T1-GE3
SIZ710DT-T1-GE3
3000+0.619706
6000+0.588726
Increments of 3000
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIRTape & Reel (TR)TrenchFET®Active2 N-Channel (Half Bridge)Logic Level Gate20V16A, 35A6.8 mOhm @ 19A, 10V2.2V @ 250µA18nC @ 10V820pF @ 10V27W, 48W-55°C ~ 150°C (TJ)Surface Mount6-PowerPair™6-PowerPair™
SIZ710DT-T1-GE3-Cut
SIZ710DT-T1-GE3
1+1.5
10+1.3451
25+1.27647
100+1.04863
250+0.980235
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIRCut Tape (CT)TrenchFET®Active2 N-Channel (Half Bridge)Logic Level Gate20V16A, 35A6.8 mOhm @ 19A, 10V2.2V @ 250µA18nC @ 10V820pF @ 10V27W, 48W-55°C ~ 150°C (TJ)Surface Mount6-PowerPair™6-PowerPair™
SSM6N7002BFU,LF-Cut
SSM6N7002BFU,LF
1+0.431373
10+0.306863
25+0.238824
100+0.180882
250+0.127961
Increments of 1
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 60V 0.2A US6Cut Tape (CT)-Last Time Buy2 N-Channel (Dual)Logic Level Gate60V200mA2.1 Ohm @ 500mA, 10V3.1V @ 250µA-17pF @ 25V300mW150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363US6
SSM6N7002BFU,LF
SSM6N7002BFU,LF
3000+0.0784314
Increments of 3000
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 60V 0.2A US6Tape & Reel (TR)-Last Time Buy2 N-Channel (Dual)Logic Level Gate60V200mA2.1 Ohm @ 500mA, 10V3.1V @ 250µA-17pF @ 25V300mW150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363US6
SIZ918DT-T1-GE3-Cut
SIZ918DT-T1-GE3
1+1.2549
10+1.12647
25+1.06863
100+0.877941
250+0.820667
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 16A POWERPAIRCut Tape (CT)TrenchFET®Active2 N-Channel (Half Bridge)Logic Level Gate30V16A, 28A12 mOhm @ 13.8A, 10V2.2V @ 250µA21nC @ 10V790pF @ 15V29W, 100W-55°C ~ 150°C (TJ)Surface Mount6-PowerPair™6-PowerPair™
SIZ918DT-T1-GE3
SIZ918DT-T1-GE3
3000+0.518824
6000+0.492882
Increments of 3000
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 16A POWERPAIRTape & Reel (TR)TrenchFET®Active2 N-Channel (Half Bridge)Logic Level Gate30V16A, 28A12 mOhm @ 13.8A, 10V2.2V @ 250µA21nC @ 10V790pF @ 15V29W, 100W-55°C ~ 150°C (TJ)Surface Mount6-PowerPair™6-PowerPair™
FDPC8011S-Cut
FDPC8011S
1+3.2451
10+2.91471
100+2.38804
500+2.0329
1000+1.7145
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 25V 13A/27A 8PQFNCut Tape (CT)PowerTrench®Active2 N-Channel (Dual) AsymmetricalLogic Level Gate25V13A, 27A6 mOhm @ 13A, 10V2.2V @ 250µA19nC @ 10V1240pF @ 13V800mW, 900mW-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-PQFN (3.3x3.3), Power33
FDPC8011S
FDPC8011S
3000+1.58133
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 25V 13A/27A 8PQFNTape & Reel (TR)PowerTrench®Active2 N-Channel (Dual) AsymmetricalLogic Level Gate25V13A, 27A6 mOhm @ 13A, 10V2.2V @ 250µA19nC @ 10V1240pF @ 13V800mW, 900mW-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-PQFN (3.3x3.3), Power33
FDMC8030
FDMC8030
3000+0.694853
6000+0.669118
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 40V 12A 8MLPTape & Reel (TR)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate40V12A10 mOhm @ 12A, 10V2.8V @ 250µA30nC @ 10V1975pF @ 20V800mW-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-MLP (3x3), Power33
FDMB3900AN
FDMB3900AN
3000+0.358235
6000+0.333529
15000+0.321176
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 25V 7A 8-MLPTape & Reel (TR)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate25V7A23 mOhm @ 7A, 10V3V @ 250µA17nC @ 10V890pF @ 13V800mW-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-MLP, MicroFET (3x1.9)
FDMS7608S
FDMS7608S
3000+0.945
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 12A/15A 8-PQFNTape & Reel (TR)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate30V12A, 15A10 mOhm @ 12A, 10V3V @ 250µA24nC @ 10V1510pF @ 15V1W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFNPower56