ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
AUIRF7316QTR
AUIRF7316QTR
4000+0.727941
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 30V 4.9A 8SOICTape & Reel (TR)HEXFET®Active2 P-Channel (Dual)Logic Level Gate30V-58 mOhm @ 4.9A, 10V3V @ 250µA34nC @ 10V710pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC8-SO
AUIRF7313QTR
AUIRF7313QTR
4000+0.722647
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 30V 6.5A 8SOICTape & Reel (TR)HEXFET®Active2 N-Channel (Dual)Logic Level Gate30V6.9A29 mOhm @ 6.9A, 10V3V @ 250µA33nC @ 10V755pF @ 25V2.4W-55°C ~ 175°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
AUIRF7309QTR
AUIRF7309QTR
4000+0.634118
8000+0.602412
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET N/P-CH 30V 4A/3A 8SOICTape & Reel (TR)HEXFET®ActiveN and P-ChannelLogic Level Gate30V4A, 3A50 mOhm @ 2.4A, 10V3V @ 250µA25nC @ 4.5V520pF @ 15V1.4W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
AUIRF7304QTR
AUIRF7304QTR
4000+0.645098
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2P-CH 20V 4A 8SOICTape & Reel (TR)HEXFET®Active2 P-Channel (Dual)Logic Level Gate20V4.3A90 mOhm @ 2.2A, 4.5V1.5V @ 250µA22nC @ 4.5V610pF @ 15V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC8-SO
AUIRF7303QTR
AUIRF7303QTR
4000+0.645098
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 30V 5.3A 8SOICTape & Reel (TR)HEXFET®Active2 N-Channel (Dual)Logic Level Gate30V5.3A50 mOhm @ 2.7A, 10V3V @ 100µA21nC @ 10V515pF @ 25V2.4W-55°C ~ 175°C (TJ)Surface Mount8-SOIC8-SO
AUIRF7103QTR
AUIRF7103QTR
4000+0.562059
8000+0.533961
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 50V 3A 8SOICTape & Reel (TR)Automotive, AEC-Q101, HEXFET®Active2 N-Channel (Dual)Standard50V3A130 mOhm @ 3A, 10V3V @ 250µA15nC @ 10V255pF @ 25V2.4W-55°C ~ 175°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
QS8K2TR-Cut
QS8K2TR
1+0.970588
10+0.85
25+0.752549
100+0.655588
250+0.570588
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2N-CH 30V 3.5A TSMT8Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate30V3.5A54 mOhm @ 3.5A, 4.5V1.5V @ 1mA4.6nC @ 4.5V285pF @ 10V1.25W150°C (TJ)Surface Mount8-SMD, Flat LeadTSMT8
QS6J11TR-Cut
QS6J11TR
1+0.696078
10+0.585294
25+0.512157
100+0.438922
250+0.380431
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2P-CH 12V 2A TSMT6Cut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate12V2A105 mOhm @ 2A, 4.5V1V @ 1mA6.5nC @ 4.5V770pF @ 6V600mW150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6TSMT6 (SC-95)
EM6M2T2R-Cut
EM6M2T2R
1+0.5
10+0.42451
25+0.37098
100+0.318137
250+0.275686
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 20V 0.2A EMT6Cut Tape (CT)-ActiveN and P-ChannelLogic Level Gate20V200mA1 Ohm @ 200mA, 4V1V @ 1mA-25pF @ 10V150mW150°C (TJ)Surface MountSOT-563, SOT-666EMT6
QS8M51TR-Cut
QS8M51TR
1+1.33333
10+1.18333
25+1.06863
100+0.935196
250+0.820667
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 100V 2A/1.5A TSMT8Cut Tape (CT)-ActiveN and P-ChannelLogic Level Gate100V2A, 1.5A325 mOhm @ 2A, 10V2.5V @ 1mA4.7nC @ 5V290pF @ 25V1.5W150°C (TJ)Surface Mount8-SMD, Flat LeadTSMT8
QS8M13TCR-Cut
QS8M13TCR
1+1.11765
10+0.986275
25+0.890588
100+0.779314
250+0.683882
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 30V 6A/5A TSMT8Cut Tape (CT)-ActiveN and P-ChannelLogic Level Gate30V6A, 5A28 mOhm @ 6A, 10V2.5V @ 1mA5.5nC @ 5V390pF @ 10V1.5W150°C (TJ)Surface Mount8-SMD, Flat LeadTSMT8
QS8M12TCR-Cut
QS8M12TCR
1+0.911765
10+0.798039
25+0.706667
100+0.61549
250+0.535725
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 30V 4A TSMT8Cut Tape (CT)-ActiveN and P-ChannelLogic Level Gate30V4A42 mOhm @ 4A, 10V2.5V @ 1mA3.4nC @ 5V250pF @ 10V1.5W150°C (TJ)Surface Mount8-SMD, Flat LeadTSMT8
QS8M11TCR-Cut
QS8M11TCR
1+0.803922
10+0.7
25+0.62
100+0.539804
250+0.469843
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 30V 3.5A TSMT8Cut Tape (CT)-Not For New DesignsN and P-Channel-30V3.5A------Surface Mount8-SMD, Flat LeadTSMT8
QS8M51TR
QS8M51TR
3000+0.518824
6000+0.492882
Increments of 3000
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 100V 2A/1.5A TSMT8Tape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate100V2A, 1.5A325 mOhm @ 2A, 10V2.5V @ 1mA4.7nC @ 5V290pF @ 25V1.5W150°C (TJ)Surface Mount8-SMD, Flat LeadTSMT8
QS8M13TCR
QS8M13TCR
3000+0.432353
6000+0.410735
Increments of 3000
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 30V 6A/5A TSMT8Tape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate30V6A, 5A28 mOhm @ 6A, 10V2.5V @ 1mA5.5nC @ 5V390pF @ 10V1.5W150°C (TJ)Surface Mount8-SMD, Flat LeadTSMT8
QS8M12TCR
QS8M12TCR
3000+0.320922
6000+0.298784
15000+0.287726
Increments of 3000
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 30V 4A TSMT8Tape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate30V4A42 mOhm @ 4A, 10V2.5V @ 1mA3.4nC @ 5V250pF @ 10V1.5W150°C (TJ)Surface Mount8-SMD, Flat LeadTSMT8
QS8M11TCR
QS8M11TCR
3000+0.281471
6000+0.262059
15000+0.252353
30000+0.242647
Increments of 3000
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 30V 3.5A TSMT8Tape & Reel (TR)-Not For New DesignsN and P-Channel-30V3.5A------Surface Mount8-SMD, Flat LeadTSMT8
QS8K51TR
QS8K51TR
3000+0.466667
Increments of 3000
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2N-CH 30V 2A TSMT8Tape & Reel (TR)-Active2 N-Channel (Dual)-30V2A------Surface Mount8-SMD, Flat LeadTSMT8
PMDPB70XP,115
PMDPB70XP,115
3000+0.23101
Increments of 3000
Leadtime
2-3 weeks
Nexperia USA Inc.MOSFET 2P-CH 30V 2.9A 6DFNTape & Reel (TR)-Active2 P-Channel (Dual)Logic Level Gate30V2.9A87 mOhm @ 2.9A, 4.5V1V @ 250µA7.8nC @ 5V680pF @ 15V490mW-55°C ~ 150°C (TJ)Surface Mount6-UDFN Exposed PadDFN2020-6
SIZ920DT-T1-GE3
SIZ920DT-T1-GE3
3000+0.787961
6000+0.758784
Increments of 3000
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 40A PWRPAIRTape & Reel (TR)TrenchFET®Active2 N-Channel (Half Bridge)Standard30V40A7.1 mOhm @ 18.9A, 10V2.5V @ 250µA35nC @ 10V1260pF @ 15V39W, 100W-55°C ~ 150°C (TJ)Surface Mount6-PowerPair™6-PowerPair™
SIZ920DT-T1-GE3-Cut
SIZ920DT-T1-GE3
1+1.77451
10+1.59314
25+1.50314
100+1.28049
250+1.20239
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 40A PWRPAIRCut Tape (CT)TrenchFET®Active2 N-Channel (Half Bridge)Standard30V40A7.1 mOhm @ 18.9A, 10V2.5V @ 250µA35nC @ 10V1260pF @ 15V39W, 100W-55°C ~ 150°C (TJ)Surface Mount6-PowerPair™6-PowerPair™
SIA921EDJ-T1-GE3-Cut
SIA921EDJ-T1-GE3
1+0.637255
10+0.559804
25+0.525882
100+0.429216
250+0.398667
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 20V 4.5A SC70-6Cut Tape (CT)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate20V4.5A59 mOhm @ 3.6A, 4.5V1.4V @ 250µA23nC @ 10V-7.8W-55°C ~ 150°C (TJ)Surface MountPowerPAK® SC-70-6 DualPowerPAK® SC-70-6 Dual
SIA906EDJ-T1-GE3-Cut
SIA906EDJ-T1-GE3
1+0.627451
10+0.537255
25+0.501176
100+0.400784
250+0.372157
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 20V 4.5A SC70-6Cut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate20V4.5A46 mOhm @ 3.9A, 4.5V1.4V @ 250µA12nC @ 10V350pF @ 10V7.8W-55°C ~ 150°C (TJ)Surface MountPowerPAK® SC-70-6 DualPowerPAK® SC-70-6 Dual
SI7998DP-T1-GE3-Cut
SI7998DP-T1-GE3
1+1.60784
10+1.43922
25+1.36549
100+1.12176
250+1.04863
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 25A PPAK SO-8Cut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate30V25A, 30A9.3 mOhm @ 15A, 10V2.5V @ 250µA26nC @ 10V1100pF @ 15V22W, 40W-55°C ~ 150°C (TJ)Surface MountPowerPAK® SO-8 DualPowerPAK® SO-8 Dual
SI4936CDY-T1-GE3-Cut
SI4936CDY-T1-GE3
1+0.598039
10+0.52451
25+0.492941
100+0.402353
250+0.373765
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 5.8A 8-SOICCut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate30V5.8A40 mOhm @ 5A, 10V3V @ 250µA9nC @ 10V325pF @ 15V2.3W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO