ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
FDY2000PZ-Cut
FDY2000PZ
1+0.480392
10+0.391176
100+0.26598
500+0.19951
1000+0.149627
Increments of 1
Leadtime
2-3 weeks		Fairchild/ON SemiconductorMOSFET 2P-CH 20V 0.35A SOT-563FCut Tape (CT)PowerTrench®Active2 P-Channel (Dual)Logic Level Gate20V350mA1.2 Ohm @ 350mA, 4.5V1.5V @ 250µA1.4nC @ 4.5V100pF @ 10V446mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SC-89-6
FDS8935-Cut
FDS8935
1+1.40196
10+1.25098
100+0.97549
500+0.805824
1000+0.636176
Increments of 1
Leadtime
2-3 weeks		Fairchild/ON SemiconductorMOSFET 2P-CH 80V 2.1A 8SOICCut Tape (CT)PowerTrench®Active2 P-Channel (Dual)Logic Level Gate80V2.1A183 mOhm @ 2.1A, 10V3V @ 250µA19nC @ 10V879pF @ 40V1.6W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
FDMC8200S-Cut
FDMC8200S
1+1.11765
10+1.00098
100+0.780392
500+0.644667
1000+0.508941
Increments of 1
Leadtime
2-3 weeks		Fairchild/ON SemiconductorMOSFET 2N-CH 30V 6A/8.5A 8MLPCut Tape (CT)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate30V6A, 8.5A20 mOhm @ 6A, 10V3V @ 250µA10nC @ 10V660pF @ 15V700mW, 1W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-MLP (3.3x3.3), Power33
NTUD3169CZT5G-Cut
NTUD3169CZT5G
1+0.5
10+0.431373
100+0.321961
500+0.252941
1000+0.195451
Increments of 1
Leadtime
2-3 weeks		ON SemiconductorMOSFET N/P-CH 20V SOT-963Cut Tape (CT)-ActiveN and P-ChannelLogic Level Gate20V220mA, 200mA1.5 Ohm @ 100mA, 4.5V1V @ 250µA-12.5pF @ 15V125mW-55°C ~ 150°C (TJ)Surface MountSOT-963SOT-963
DMP2100UCB9-7
DMP2100UCB9-7
3000+0.193549
6000+0.181059
15000+0.168569
30000+0.159833
Increments of 3000
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET 2P-CH 20V 3A 9UWLBTape & Reel (TR)-Active2 P-Channel (Dual) Common SourceLogic Level Gate20V3A100 mOhm @ 1A, 4.5V900mV @ 250µA4.2nC @ 4.5V310pF @ 10V800mW-55°C ~ 150°C (TJ)Surface Mount9-UFBGA, WLBGAU-WLB1515-9
DMN6040SSD-13
DMN6040SSD-13
2500+0.199451
5000+0.186578
12500+0.173716
25000+0.164706
Increments of 2500
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET 2N-CH 60V 5A 8SOTape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate60V5A40 mOhm @ 4.5A, 10V3V @ 250µA22.4nC @ 10V1287pF @ 25V1.3W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMP2100UCB9-7-Cut
DMP2100UCB9-7
1+0.558824
10+0.482353
100+0.36
500+0.282843
1000+0.218559
Increments of 1
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET 2P-CH 20V 3A 9UWLBCut Tape (CT)-Active2 P-Channel (Dual) Common SourceLogic Level Gate20V3A100 mOhm @ 1A, 4.5V900mV @ 250µA4.2nC @ 4.5V310pF @ 10V800mW-55°C ~ 150°C (TJ)Surface Mount9-UFBGA, WLBGAU-WLB1515-9
DMN6040SSD-13-Cut
DMN6040SSD-13
1+0.578431
10+0.497059
100+0.371078
500+0.291588
1000+0.225314
Increments of 1
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET 2N-CH 60V 5A 8SOCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate60V5A40 mOhm @ 4.5A, 10V3V @ 250µA22.4nC @ 10V1287pF @ 25V1.3W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
FDS4501H-Cut
FDS4501H
1+1.10784
10+0.995098
100+0.77549
500+0.640627
1000+0.505765
Increments of 1
Leadtime
2-3 weeks		Fairchild/ON SemiconductorMOSFET N/P-CH 30V/20V 8SOICCut Tape (CT)PowerTrench®ActiveN and P-ChannelLogic Level Gate30V, 20V9.3A, 5.6A18 mOhm @ 9.3A, 10V3V @ 250µA27nC @ 4.5V1958pF @ 10V1W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
FDS6984AS-Cut
FDS6984AS
Leadtime
2-3 weeks		Fairchild/ON SemiconductorMOSFET 2N-CH 30V 5.5A/8.5A 8SOICCut Tape (CT)PowerTrench®, SyncFET™2 N-Channel (Dual)Logic Level Gate30V5.5A, 8.5A31 mOhm @ 5.5A, 10V3V @ 250µA11nC @ 10V420pF @ 15V900mW-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
FDS6994S-Cut
FDS6994S
1+1.90196
10+1.70588
Increments of 1
Leadtime
2-3 weeks		Fairchild/ON SemiconductorMOSFET 2N-CH 30V 6.9A/8.2A 8SOICCut Tape (CT)PowerTrench®, SyncFET™2 N-Channel (Dual)Logic Level Gate30V6.9A, 8.2A21 mOhm @ 6.9A, 10V3V @ 250µA12nC @ 5V800pF @ 15V900mW-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
FDG1024NZ-Cut
FDG1024NZ
1+0.607843
10+0.516667
100+0.38598
500+0.303235
1000+0.234324
Increments of 1
Leadtime
2-3 weeks		Fairchild/ON SemiconductorMOSFET 2N-CH 20V 1.2A SC70-6Cut Tape (CT)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate20V1.2A175 mOhm @ 1.2A, 4.5V1V @ 250µA2.6nC @ 4.5V150pF @ 10V300mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SC-70-6
FDC6310P-Cut
FDC6310P
1+0.647059
10+0.565686
100+0.433726
500+0.342902
1000+0.274314
Increments of 1
Leadtime
2-3 weeks		Fairchild/ON SemiconductorMOSFET 2P-CH 20V 2.2A SSOT-6Cut Tape (CT)PowerTrench®Active2 P-Channel (Dual)Logic Level Gate20V2.2A125 mOhm @ 2.2A, 4.5V1.5V @ 250µA5.2nC @ 4.5V337pF @ 10V700mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6SuperSOT™-6
FDME1034CZT-Cut
FDME1034CZT
1+0.627451
10+0.541176
100+0.403725
500+0.317235
1000+0.245137
Increments of 1
Leadtime
2-3 weeks		Fairchild/ON SemiconductorMOSFET N/P-CH 20V 6-MICROFETCut Tape (CT)PowerTrench®ActiveN and P-ChannelLogic Level Gate20V3.8A, 2.6A66 mOhm @ 3.4A, 4.5V1V @ 250µA4.2nC @ 4.5V300pF @ 10V600mW-55°C ~ 150°C (TJ)Surface Mount6-UFDFN Exposed Pad6-MicroFET (1.6x1.6)
FDG6318P-Cut
FDG6318P
1+0.617647
10+0.541176
100+0.415294
500+0.328255
1000+0.262608
Increments of 1
Leadtime
2-3 weeks		Fairchild/ON SemiconductorMOSFET 2P-CH 20V 0.5A SC70-6Cut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate20V500mA780 mOhm @ 500mA, 4.5V1.5V @ 250µA1.2nC @ 4.5V83pF @ 10V300mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SC-70-6
NTZD5110NT1G-Cut
NTZD5110NT1G
1+0.401961
10+0.303922
100+0.18951
500+0.129686
1000+0.0997549
Increments of 1
Leadtime
2-3 weeks		ON SemiconductorMOSFET 2N-CH 60V 0.294A SOT563Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate60V294mA1.6 Ohm @ 500mA, 10V2.5V @ 250µA0.7nC @ 4.5V24.5pF @ 20V250mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
NTMD4840NR2G-Cut
NTMD4840NR2G
1+0.637255
10+0.559804
100+0.429216
500+0.339294
1000+0.271431
Increments of 1
Leadtime
2-3 weeks		ON SemiconductorMOSFET 2N-CH 30V 4.5A 8SOICCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate30V4.5A24 mOhm @ 6.9A, 10V3V @ 250µA9.5nC @ 10V520pF @ 15V680mW-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
NTMD4820NR2G-Cut
NTMD4820NR2G
1+0.77451
10+0.682353
100+0.523137
500+0.41351
1000+0.330814
Increments of 1
Leadtime
2-3 weeks		ON SemiconductorMOSFET 2N-CH 30V 4.9A 8SOICCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate30V4.9A20 mOhm @ 7.5A, 10V3V @ 250µA7.7nC @ 4.5V940pF @ 15V750mW-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
NTGD4167CT1G-Cut
NTGD4167CT1G
1+0.45098
10+0.390196
100+0.291471
500+0.22898
1000+0.176931
Increments of 1
Leadtime
2-3 weeks		ON SemiconductorMOSFET N/P-CH 30V 6-TSOPCut Tape (CT)-ActiveN and P-ChannelLogic Level Gate30V2.6A, 1.9A90 mOhm @ 2.6A, 4.5V1.5V @ 250µA5.5nC @ 4.5V295pF @ 15V900mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-66-TSOP
IRF6802SDTRPBF
IRF6802SDTRPBF
4800+1.07059
Increments of 4800
Leadtime
2-3 weeks		Infineon TechnologiesMOSFET 2N-CH 25V 16A SATape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate25V16A4.2 mOhm @ 16A, 10V2.1V @ 35µA13nC @ 4.5V1350pF @ 13V1.7W-40°C ~ 150°C (TJ)Surface MountDirectFET™ Isometric SADIRECTFET™ SA
AUIRF9952QTR
AUIRF9952QTR
4000+0.521569
Increments of 4000
Leadtime
2-3 weeks		Infineon TechnologiesMOSFET N/P-CH 30V 3.5A/2.3A 8SOTape & Reel (TR)HEXFET®ActiveN and P-ChannelLogic Level Gate30V3.5A, 2.3A100 mOhm @ 2.2A, 10V3V @ 250µA14nC @ 10V190pF @ 15V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
AUIRF7379QTR
AUIRF7379QTR
4000+0.645098
Increments of 4000
Leadtime
2-3 weeks		Infineon TechnologiesMOSFET N/P-CH 30V 5.8A 8SOICTape & Reel (TR)HEXFET®ActiveN and P-ChannelLogic Level Gate30V5.8A, 4.3A45 mOhm @ 5.8A, 10V3V @ 250µA25nC @ 10V520pF @ 25V2.5W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
AUIRF7342QTR
AUIRF7342QTR
4000+0.750441
Increments of 4000
Leadtime
2-3 weeks		Infineon TechnologiesMOSFET 2P-CH 55V 3.4A 8SOICTape & Reel (TR)Automotive, AEC-Q101, HEXFET®Active2 P-Channel (Dual)Logic Level Gate55V3.4A105 mOhm @ 3.4A, 10V3V @ 250µA38nC @ 10V690pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
AUIRF7341QTR
AUIRF7341QTR
4000+0.764343
Increments of 4000
Leadtime
2-3 weeks		Infineon TechnologiesMOSFET 2N-CH 55V 5.1A 8SOICTape & Reel (TR)Automotive, AEC-Q101, HEXFET®Active2 N-Channel (Dual)Logic Level Gate55V5.1A50 mOhm @ 5.1A, 10V3V @ 250µA44nC @ 10V780pF @ 25V2.4W-55°C ~ 175°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
AUIRF7319QTR
AUIRF7319QTR
4000+0.727941
Increments of 4000
Leadtime
2-3 weeks		Infineon TechnologiesMOSFET N/P-CH 30V 8SOICTape & Reel (TR)HEXFET®ActiveN and P-ChannelLogic Level Gate30V6.5A, 4.9A29 mOhm @ 5.8A, 10V3V @ 250µA33nC @ 10V650pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC8-SO