ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
DMN63D8LDW-7-Cut
DMN63D8LDW-7
1+0.313725
10+0.254902
100+0.135392
500+0.0890588
1000+0.0605588
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 30V 0.22A SOT363Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate30V220mA2.8 Ohm @ 250mA, 10V1.5V @ 250µA870nC @ 10V22pF @ 25V300mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
DMN63D8LDW-7
DMN63D8LDW-7
3000+0.0530392
6000+0.0461176
15000+0.0391961
30000+0.0368922
75000+0.0345882
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 30V 0.22A SOT363Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate30V220mA2.8 Ohm @ 250mA, 10V1.5V @ 250µA870nC @ 10V22pF @ 25V300mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
CSD87312Q3E
CSD87312Q3E
2500+0.386029
Increments of 2500
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 30V 27A 8VSONTape & Reel (TR)NexFET™Active2 N-Channel (Dual) Common SourceLogic Level Gate30V27A33 mOhm @ 7A , 8V1.3V @ 250µA8.2nC @ 4.5V1250pF @ 15V2.5W-55°C ~ 150°C (TJ)Surface Mount8-PowerTDFN8-VSON (3.3x3.3)
CSD87312Q3E-Cut
CSD87312Q3E
1+1.04902
10+0.938235
100+0.731569
500+0.604373
1000+0.477137
Increments of 1
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 30V 27A 8VSONCut Tape (CT)NexFET™Active2 N-Channel (Dual) Common SourceLogic Level Gate30V27A33 mOhm @ 7A , 8V1.3V @ 250µA8.2nC @ 4.5V1250pF @ 15V2.5W-55°C ~ 150°C (TJ)Surface Mount8-PowerTDFN8-VSON (3.3x3.3)
AAT7347IAS-T1
AAT7347IAS-T1
2500+0.0810294
5000+0.0729314
12500+0.0648235
Increments of 2500
Leadtime
2-3 weeks
Skyworks Solutions Inc.MOSFET 8SOP--Active-------------
STL60N32N3LL-Cut
STL60N32N3LL
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2N-CH 30V 32A/60A PWRFLATCut Tape (CT)STripFET™Obsolete2 N-Channel (Dual) AsymmetricalLogic Level Gate30V32A, 60A9.2 mOhm @ 6.8A, 10V1V @ 1µA6.6nC @ 4.5V950pF @ 25V23W, 50W-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFNPowerFlat™ (5x6)
STL60N32N3LL
STL60N32N3LL
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2N-CH 30V 32A/60A PWRFLATTape & Reel (TR)STripFET™Obsolete2 N-Channel (Dual) AsymmetricalLogic Level Gate30V32A, 60A9.2 mOhm @ 6.8A, 10V1V @ 1µA6.6nC @ 4.5V950pF @ 25V23W, 50W-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFNPowerFlat™ (5x6)
US6M11TR-Cut
US6M11TR
1+0.637255
10+0.534314
25+0.467451
100+0.400784
250+0.347333
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 20V/12V TUMT6Cut Tape (CT)-ActiveN and P-ChannelLogic Level Gate20V, 12V1.5A, 1.3A180 mOhm @ 1.5A, 4.5V1V @ 1mA1.8nC @ 4.5V110pF @ 10V1W150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363UMT6
US6J11TR-Cut
US6J11TR
1+0.637255
10+0.534314
25+0.467451
100+0.400784
250+0.347333
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2P-CH 12V 1.3A TUMT6Cut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate12V1.3A260 mOhm @ 1.3A, 4.5V1V @ 1mA2.4nC @ 4.5V290pF @ 6V320mW150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363UMT6
EM6K31T2R-Cut
EM6K31T2R
1+0.490196
10+0.408824
25+0.357647
100+0.306667
250+0.265765
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2N-CH 60V 0.25A EMT6Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate60V250mA2.4 Ohm @ 250mA, 10V2.3V @ 1mA-15pF @ 25V150mW150°C (TJ)Surface MountSOT-563, SOT-666EMT6
SI4966DY-T1-E3-Cut
SI4966DY-T1-E3
1+1.79412
10+1.61569
25+1.52431
100+1.29863
250+1.21933
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 20V 8SOICCut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate20V-25 mOhm @ 7.1A, 4.5V1.5V @ 250µA50nC @ 4.5V-2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI4936ADY-T1-E3-Cut
SI4936ADY-T1-E3
1+2
10+1.79804
25+1.69647
100+1.44539
250+1.35718
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 4.4A 8-SOICCut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate30V4.4A36 mOhm @ 5.9A, 10V3V @ 250µA20nC @ 10V-1.1W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI4804CDY-T1-GE3-Cut
SI4804CDY-T1-GE3
1+0.754902
10+0.664706
25+0.624706
100+0.509706
250+0.473412
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 8A 8SOICCut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Standard30V8A22 mOhm @ 7.5A, 10V2.4V @ 250µA23nC @ 10V865pF @ 15V3.1W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI4539ADY-T1-E3-Cut
SI4539ADY-T1-E3
1+1.52941
10+1.37059
25+1.30078
100+1.06833
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET N/P-CH 30V 4.4A 8-SOICCut Tape (CT)TrenchFET®ObsoleteN and P-ChannelLogic Level Gate30V4.4A, 3.7A36 mOhm @ 5.9A, 10V1V @ 250µA (Min)20nC @ 10V-1.1W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI4532ADY-T1-E3-Cut
SI4532ADY-T1-E3
1+0.813725
10+0.713725
25+0.670588
100+0.547255
250+0.508314
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET N/P-CH 30V 3.7A 8-SOICCut Tape (CT)TrenchFET®ActiveN and P-ChannelLogic Level Gate30V3.7A, 3A53 mOhm @ 4.9A, 10V1V @ 250µA (Min)16nC @ 10V-1.13W, 1.2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI1900DL-T1-E3-Cut
SI1900DL-T1-E3
1+0.607843
10+0.516667
25+0.482353
100+0.38598
250+0.358392
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 0.59A SC70-6Cut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate30V590mA480 mOhm @ 590mA, 10V3V @ 250µA1.4nC @ 10V-270mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SC-70-6 (SOT-363)
SI7228DN-T1-GE3-Cut
SI7228DN-T1-GE3
1+1.53922
10+1.37647
25+1.30627
100+1.07304
250+1.00302
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 26A PPAK 1212-8Cut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Standard30V26A20 mOhm @ 8.8A, 10V2.5V @ 250µA13nC @ 10V480pF @ 15V23W-55°C ~ 150°C (TJ)Surface MountPowerPAK® 1212-8 DualPowerPAK® 1212-8 Dual
SI9945BDY-T1-GE3-Cut
SI9945BDY-T1-GE3
1+0.852941
10+0.751961
25+0.706667
100+0.576765
250+0.535725
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 60V 5.3A 8-SOICCut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate60V5.3A58 mOhm @ 4.3A, 10V3V @ 250µA20nC @ 10V665pF @ 15V3.1W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI9933CDY-T1-E3-Cut
SI9933CDY-T1-E3
1+0.637255
10+0.559804
25+0.525882
100+0.429216
250+0.398667
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 20V 4A 8SOICCut Tape (CT)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate20V4A58 mOhm @ 4.8A, 4.5V1.4V @ 250µA26nC @ 10V665pF @ 10V3.1W-50°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI7218DN-T1-E3-Cut
SI7218DN-T1-E3
1+1.04902
10+0.935294
25+0.887843
100+0.729118
250+0.681608
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 24A 1212-8Cut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Standard30V24A25 mOhm @ 8A, 10V3V @ 250µA17nC @ 10V700pF @ 15V23W-55°C ~ 150°C (TJ)Surface MountPowerPAK® 1212-8 DualPowerPAK® 1212-8 Dual
SI5999EDU-T1-GE3-Cut
SI5999EDU-T1-GE3
1+0.598039
10+0.52451
25+0.492941
100+0.402353
250+0.373765
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 20V 6A POWERPAKCut Tape (CT)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate20V6A59 mOhm @ 3.5A, 4.5V1.5V @ 250µA20nC @ 10V496pF @ 10V10.4W-55°C ~ 150°C (TJ)Surface MountPowerPAK® ChipFET™ DualPowerPAK® ChipFet Dual
SI5999EDU-T1-GE3
SI5999EDU-T1-GE3
3000+0.223902
6000+0.208461
15000+0.200735
Increments of 3000
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 20V 6A POWERPAKTape & Reel (TR)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate20V6A59 mOhm @ 3.5A, 4.5V1.5V @ 250µA20nC @ 10V496pF @ 10V10.4W-55°C ~ 150°C (TJ)Surface MountPowerPAK® ChipFET™ DualPowerPAK® ChipFet Dual
BSM120D12P2C005
BSM120D12P2C005
1+348.539
10+331.714
25+319.696
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2N-CH 1200V 120A MODULEBulk-Active2 N-Channel (Half Bridge)Standard1200V (1.2kV)120A-2.7V @ 22mA-14000pF @ 10V780W-40°C ~ 150°C (TJ)-ModuleModule
BSM180D12P2C101
BSM180D12P2C101
1+387.676
10+373.317
25+367.573
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2N-CH 1200V 180A MODULEBulk-Active2 N-Channel (Half Bridge)Standard1200V (1.2kV)180A-4V @ 35.2mA-23000pF @ 10V1130W-40°C ~ 150°C (TJ)-ModuleModule
FC8V33030L
FC8V33030L
3000+0.310471
Increments of 3000
Leadtime
2-3 weeks
Panasonic Electronic ComponentsMOSFET 2N-CH 33V 6.5A WMINI8Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate33V6.5A20 mOhm @ 3.3A, 10V2.5V @ 480µA3.8nC @ 4.5V360pF @ 10V1W150°C (TJ)Surface Mount8-SMD, Flat LeadWMini8-F1