ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
ALD210800ASCL
ALD210800ASCL
1+4.35294
10+3.88627
25+3.49804
100+3.18696
250+2.87604
Increments of 1
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET 4N-CH 10.6V 0.08A 16SOICTubeEPAD®, Zero Threshold™Active4 N-Channel, Matched PairLogic Level Gate10.6V80mA25 Ohm10mV @ 10µA-15pF @ 5V500mW0°C ~ 70°C (TJ)Surface Mount16-SOIC (0.154", 3.90mm Width)16-SOIC
ALD210800PCL
ALD210800PCL
50+2.91863
Increments of 50
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET 4N-CH 10.6V 0.08A 16DIPTubeEPAD®, Zero Threshold™Active4 N-Channel, Matched PairLogic Level Gate10.6V80mA25 Ohm20mV @ 10µA-15pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole16-DIP (0.300", 7.62mm)16-PDIP
ALD212900PAL
ALD212900PAL
1+2.77451
10+2.47549
25+2.22784
100+2.0299
250+1.83188
Increments of 1
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET 2N-CH 10.6V 0.08A 8DIPTubeEPAD®, Zero Threshold™Active2 N-Channel (Dual) Matched PairLogic Level Gate10.6V80mA14 Ohm20mV @ 20µA-30pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
ALD212900ASAL
ALD212900ASAL
50+2.67353
Increments of 50
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET 2N-CH 10.6V 0.08A 8SOICTubeEPAD®, Zero Threshold™Active2 N-Channel (Dual) Matched PairLogic Level Gate10.6V80mA14 Ohm10mV @ 20µA-30pF @ 5V500mW0°C ~ 70°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
ALD210800SCL
ALD210800SCL
1+3.62745
10+3.24314
25+2.91843
100+2.65922
250+2.39973
Increments of 1
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET 4N-CH 10.6V 0.08A 16SOICTubeEPAD®, Zero Threshold™Active4 N-Channel, Matched PairLogic Level Gate10.6V80mA25 Ohm20mV @ 10µA-15pF @ 5V500mW0°C ~ 70°C (TJ)Surface Mount16-SOIC (0.154", 3.90mm Width)16-SOIC
ALD212900SAL
ALD212900SAL
50+2.22804
Increments of 50
Leadtime
2-3 weeks
Advanced Linear Devices Inc.MOSFET 2N-CH 10.6V 0.08A 8SOICTubeEPAD®, Zero Threshold™Active2 N-Channel (Dual) Matched PairLogic Level Gate10.6V80mA14 Ohm20mV @ 20µA-30pF @ 5V500mW0°C ~ 70°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
DMN2028UFDH-7-Cut
DMN2028UFDH-7
1+0.401961
10+0.348039
100+0.259804
500+0.204118
1000+0.157725
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 20V 6.8A POWERDICut Tape (CT)-Active2 N-Channel (Dual) Common DrainLogic Level Gate20V6.8A20 mOhm @ 4A, 10V1V @ 250µA8.5nC @ 4.5V151pF @ 10V1.1W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFNPowerDI3030-8
DMN2028UFDH-7
DMN2028UFDH-7
3000+0.148618
6000+0.139618
15000+0.130608
30000+0.119794
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 20V 6.8A POWERDITape & Reel (TR)-Active2 N-Channel (Dual) Common DrainLogic Level Gate20V6.8A20 mOhm @ 4A, 10V1V @ 250µA8.5nC @ 4.5V151pF @ 10V1.1W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFNPowerDI3030-8
CSD87351ZQ5D-Cut
CSD87351ZQ5D
1+2.12745
10+1.90784
100+1.53363
500+1.25998
1000+1.04399
Increments of 1
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 30V 32A 8LSONCut Tape (CT)NexFET™Active2 N-Channel (Dual) AsymmetricalLogic Level Gate30V32A-2.1V @ 250µA7.7nC @ 4.5V1255pF @ 15V12W-55°C ~ 150°C (TJ)Surface Mount8-PowerLDFN8-LSON (5x6)
DMN3018SSD-13-Cut
DMN3018SSD-13
1+0.54902
10+0.467647
100+0.348824
500+0.274098
1000+0.211804
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 30V 6.7A 8SOCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate30V6.7A22 mOhm @ 10A, 10V2.1V @ 250µA13.2nC @ 10V697pF @ 15V1.5W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMN3018SSD-13
DMN3018SSD-13
2500+0.18748
5000+0.175382
12500+0.163294
25000+0.154824
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 30V 6.7A 8SOTape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate30V6.7A22 mOhm @ 10A, 10V2.1V @ 250µA13.2nC @ 10V697pF @ 15V1.5W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
CSD87351ZQ5D
CSD87351ZQ5D
2500+0.873775
Increments of 2500
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 30V 32A 8LSONTape & Reel (TR)NexFET™Active2 N-Channel (Dual) AsymmetricalLogic Level Gate30V32A-2.1V @ 250µA7.7nC @ 4.5V1255pF @ 15V12W-55°C ~ 150°C (TJ)Surface Mount8-PowerLDFN8-LSON (5x6)
IRLHS6376TRPBF-Cut
IRLHS6376TRPBF
1+0.509804
10+0.433333
100+0.323627
500+0.254255
1000+0.196471
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 30V 3.6A 2X2 PQFNCut Tape (CT)HEXFET®Active2 N-Channel (Dual)Logic Level Gate30V3.6A63 mOhm @ 3.4A, 4.5V1.1V @ 10µA2.8nC @ 4.5V270pF @ 25V1.5W-55°C ~ 150°C (TJ)Surface Mount6-VDFN Exposed Pad6-PQFN (2x2)
SSM6N57NU,LF
SSM6N57NU,LF
3000+0.147588
6000+0.138069
15000+0.128549
30000+0.121882
Increments of 3000
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 30V 4A UDFN6Tape & Reel (TR)-Active2 N-Channel (Dual)Standard30V4A46 mOhm @ 2A, 4.5V1V @ 1mA4nC @ 4.5V310pF @ 10V1W150°C (TJ)Surface Mount6-WDFN Exposed Pad6-µDFN(2x2)
SSM6N55NU,LF(T
SSM6N55NU,LF(T
3000+0.129088
Increments of 3000
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 30V 4A UDFN6Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate30V4A46 mOhm @ 4A, 10V2.5V @ 100µA2.5nC @ 4.5V280pF @ 15V1W150°C (TJ)Surface Mount6-WDFN Exposed Pad6-µDFN(2x2)
SSM6N57NU,LF-Cut
SSM6N57NU,LF
1+0.558824
10+0.438235
25+0.369412
100+0.300588
250+0.249059
Increments of 1
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 30V 4A UDFN6Cut Tape (CT)-Active2 N-Channel (Dual)Standard30V4A46 mOhm @ 2A, 4.5V1V @ 1mA4nC @ 4.5V310pF @ 10V1W150°C (TJ)Surface Mount6-WDFN Exposed Pad6-µDFN(2x2)
SSM6N55NU,LF(T-Cut
SSM6N55NU,LF(T
1+0.607843
Increments of 1
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 30V 4A UDFN6Cut Tape (CT)-2 N-Channel (Dual)Logic Level Gate30V4A46 mOhm @ 4A, 10V2.5V @ 100µA2.5nC @ 4.5V280pF @ 15V1W150°C (TJ)Surface Mount6-WDFN Exposed Pad6-µDFN(2x2)
FDMC89521L
FDMC89521L
3000+0.833824
6000+0.802941
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 60V 8.2A POWER33Tape & Reel (TR)PowerTrench®Active2 N-Channel (Dual) AsymmetricalLogic Level Gate60V8.2A17 mOhm @ 8.2A, 10V3V @ 250µA24nC @ 10V1635pF @ 30V800mW-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-MLP (3x3), Power33
FDMS8090
FDMS8090
3000+1.25074
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 100V 10A PWR56Tape & Reel (TR)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate100V10A13 mOhm @ 10A, 10V4V @ 250µA27nC @ 10V1800pF @ 50V2.2W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFNPower56
FDMA3027PZ
FDMA3027PZ
3000+0.453971
6000+0.431275
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2P-CH 30V 3.3A MICROTape & Reel (TR)PowerTrench®Active2 P-Channel (Dual)Logic Level Gate30V3.3A87 mOhm @ 3.3A, 10V3V @ 250µA10nC @ 10V435pF @ 15V700mW-55°C ~ 150°C (TJ)Surface Mount6-WDFN Exposed Pad6-MicroFET (2x2)
FDMC7208S
FDMC7208S
3000+0.590882
6000+0.561343
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 12A/16A PWR33Tape & Reel (TR)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate30V12A, 16A9 mOhm @ 12A, 10V3V @ 250µA18nC @ 10V1130pF @ 15V800mW-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-Power33 (3x3)
FDMQ86530L
FDMQ86530L
3000+1.32023
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 4N-CH 60V 8A MLP4.5X5Tape & Reel (TR)GreenBridge™ PowerTrench®Active4 N-Channel (H-Bridge)Logic Level Gate60V8A17.5 mOhm @ 8A, 10V3V @ 250µA33nC @ 10V2295pF @ 30V1.9W-55°C ~ 150°C (TJ)Surface Mount12-WDFN Exposed Pad12-MLP (5x4.5)
FDPC8013S
FDPC8013S
3000+1.57449
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 13A/26A 3.3MMTape & Reel (TR)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate30V13A, 26A6.4 mOhm @ 13A, 10V3V @ 250µA13nC @ 10V827pF @ 15V800mW, 900mW-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-PQFN (3.3x3.3), Power33
FDMQ86530L-Cut
FDMQ86530L
1+2.97059
10+2.66961
100+2.14549
500+1.76275
1000+1.46056
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 4N-CH 60V 8A MLP4.5X5Cut Tape (CT)GreenBridge™ PowerTrench®Active4 N-Channel (H-Bridge)Logic Level Gate60V8A17.5 mOhm @ 8A, 10V3V @ 250µA33nC @ 10V2295pF @ 30V1.9W-55°C ~ 150°C (TJ)Surface Mount12-WDFN Exposed Pad12-MLP (5x4.5)
FDPC8013S-Cut
FDPC8013S
1+3.23529
10+2.90196
100+2.37774
500+2.0241
1000+1.70708
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 13A/26A 3.3MMCut Tape (CT)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate30V13A, 26A6.4 mOhm @ 13A, 10V3V @ 250µA13nC @ 10V827pF @ 15V800mW, 900mW-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-PQFN (3.3x3.3), Power33