ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
PMCXB900UE-Cut
PMCXB900UE
1+0.607843
10+0.516667
100+0.38598
500+0.303235
1000+0.234324
Increments of 1
Leadtime
2-3 weeks
Nexperia USA Inc.MOSFET N/P-CH 20V 0.6A/0.5A 6DFNCut Tape (CT)TrenchFET®ActiveN and P-Channel ComplementaryLogic Level Gate20V600mA, 500mA620 mOhm @ 600mA, 4.5V950mV @ 250µA0.7nC @ 4.5V21.3pF @ 10V265mW-55°C ~ 150°C (TJ)Surface Mount6-XFDFN Exposed Pad6-DFN (1.1x1)
PMDXB950UPE
PMDXB950UPE
5000+0.184804
Increments of 5000
Leadtime
2-3 weeks
Nexperia USA Inc.MOSFET 2P-CH 20V 0.5A 6DFNTape & Reel (TR)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate20V500mA1.4 Ohm @ 500mA, 4.5V950mV @ 250µA2.1nC @ 4.5V43pF @ 10V265mW-55°C ~ 150°C (TJ)Surface Mount6-XFDFN Exposed Pad6-DFN (1.1x1)
PMDXB600UNE
PMDXB600UNE
5000+0.194049
10000+0.180667
25000+0.171294
Increments of 5000
Leadtime
2-3 weeks
Nexperia USA Inc.MOSFET 2N-CH 20V 0.6A 6DFNTape & Reel (TR)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate20V600mA620 mOhm @ 600mA, 4.5V950mV @ 250µA0.7nC @ 4.5V21.3pF @ 10V265mW-55°C ~ 150°C (TJ)Surface Mount6-XFDFN Exposed Pad6-DFN (1.1x1)
PMCXB900UE
PMCXB900UE
5000+0.194049
10000+0.180667
25000+0.171294
Increments of 5000
Leadtime
2-3 weeks
Nexperia USA Inc.MOSFET N/P-CH 20V 0.6A/0.5A 6DFNTape & Reel (TR)TrenchFET®ActiveN and P-Channel ComplementaryLogic Level Gate20V600mA, 500mA620 mOhm @ 600mA, 4.5V950mV @ 250µA0.7nC @ 4.5V21.3pF @ 10V265mW-55°C ~ 150°C (TJ)Surface Mount6-XFDFN Exposed Pad6-DFN (1.1x1)
CSD87384M
CSD87384M
2500+0.699755
Increments of 2500
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 30V 30A 5PTABTape & Reel (TR)NexFET™Active2 N-Channel (Half Bridge)Logic Level Gate30V30A7.7 mOhm @ 25A, 8V1.9V @ 250µA9.2nC @ 4.5V1150pF @ 15V8W-55°C ~ 150°C (TJ)Surface Mount5-LGA5-PTAB (5x3.5)
SI4909DY-T1-GE3-Cut
SI4909DY-T1-GE3
1+1.04902
10+0.938235
25+0.890588
100+0.731569
250+0.683882
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 40V 8A 8SOCut Tape (CT)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate40V8A27 mOhm @ 8A, 10V2.5V @ 250µA63nC @ 10V2000pF @ 20V3.2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI4288DY-T1-GE3-Cut
SI4288DY-T1-GE3
1+1.40196
10+1.25098
25+1.18745
100+0.97549
250+0.911843
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 40V 9.2A 8SOCut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate40V9.2A20 mOhm @ 10A, 10V2.5V @ 250µA15nC @ 10V580pF @ 20V3.1W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI4202DY-T1-GE3-Cut
SI4202DY-T1-GE3
1+1.40196
10+1.25098
25+1.18745
100+0.97549
250+0.911843
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 12.1A 8SOCut Tape (CT)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate30V12.1A14 mOhm @ 8A, 10V2.5V @ 250µA17nC @ 10V710pF @ 15V3.7W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI4909DY-T1-GE3
SI4909DY-T1-GE3
2500+0.432353
5000+0.410735
Increments of 2500
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 40V 8A 8SOTape & Reel (TR)TrenchFET®Active2 P-Channel (Dual)Logic Level Gate40V8A27 mOhm @ 8A, 10V2.5V @ 250µA63nC @ 10V2000pF @ 20V3.2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI4288DY-T1-GE3
SI4288DY-T1-GE3
2500+0.576471
5000+0.547647
Increments of 2500
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 40V 9.2A 8SOTape & Reel (TR)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate40V9.2A20 mOhm @ 10A, 10V2.5V @ 250µA15nC @ 10V580pF @ 20V3.1W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SI4202DY-T1-GE3
SI4202DY-T1-GE3
2500+0.576471
5000+0.547647
Increments of 2500
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 30V 12.1A 8SOTape & Reel (TR)TrenchFET®Active2 N-Channel (Dual)Logic Level Gate30V12.1A14 mOhm @ 8A, 10V2.5V @ 250µA17nC @ 10V710pF @ 15V3.7W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
FDMB3900AN-Cut
FDMB3900AN
1+0.95098
10+0.840196
100+0.643824
500+0.508941
1000+0.407157
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 25V 7A 8-MLPCut Tape (CT)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate25V7A23 mOhm @ 7A, 10V3V @ 250µA17nC @ 10V890pF @ 13V800mW-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-MLP, MicroFET (3x1.9)
FDMS3606AS-Cut
FDMS3606AS
1+2.44118
10+2.19118
100+1.76157
500+1.44729
1000+1.1992
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 13A/27A PWR56Cut Tape (CT)PowerTrench®Active2 N-Channel (Dual) AsymmetricalLogic Level Gate30V13A, 27A8 mOhm @ 13A, 10V2.7V @ 250µA29nC @ 10V1695pF @ 15V1W-55°C ~ 150°C (TJ)Surface Mount8-PowerTDFN8-PQFN (5x6), Power56
FDMB2308PZ-Cut
FDMB2308PZ
1+1.56863
10+1.4049
100+1.12922
500+0.927765
1000+0.768716
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2P-CH MLP2X3Cut Tape (CT)PowerTrench®Active2 P-Channel (Dual) Common DrainLogic Level Gate--36 mOhm @ 5.7A, 4.5V1.5V @ 250µA30nC @ 10V3030pF @ 10V800mW-55°C ~ 150°C (TJ)Surface Mount6-WDFN Exposed Pad6-MLP (2x3)
FDMC7208S-Cut
FDMC7208S
1+1.43137
10+1.28235
100+0.999902
500+0.825961
1000+0.652078
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 12A/16A PWR33Cut Tape (CT)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate30V12A, 16A9 mOhm @ 12A, 10V3V @ 250µA18nC @ 10V1130pF @ 15V800mW-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-Power33 (3x3)
DMN4026SSDQ-13-Cut
DMN4026SSDQ-13
1+0.833333
10+0.745098
100+0.580686
500+0.479667
1000+0.378676
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 40V 7A 8SOCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate40V7A24 mOhm @ 6A, 10V3V @ 250µA19.1nC @ 10V1060pF @ 20V1.3W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMN4026SSD-13-Cut
DMN4026SSD-13
1+0.745098
10+0.659804
100+0.505882
500+0.399882
1000+0.319902
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 40V 7A 8SOCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate40V7A24 mOhm @ 6A, 10V3V @ 250µA19.1nC @ 10V1060pF @ 20V1.3W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMC4029SSDQ-13-Cut
DMC4029SSDQ-13
1+0.960784
10+0.843137
100+0.646373
500+0.510961
1000+0.408765
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 40V 7A/5.1A 8SOCut Tape (CT)-ActiveN and P-ChannelLogic Level Gate40V7A, 5.1A24 mOhm @ 6A, 10V3V @ 250µA19.1nC @ 10V1060pF @ 20V1.3W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
DMC4029SSD-13-Cut
DMC4029SSD-13
1+0.794118
10+0.696078
100+0.533922
500+0.422098
1000+0.337676
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 40V 7A/5.1A 8SOCut Tape (CT)-ActiveN and P-ChannelLogic Level Gate40V7A, 5.1A24 mOhm @ 6A, 10V3V @ 250µA19.1nC @ 10V1060pF @ 20V1.3W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
DMN4026SSDQ-13
DMN4026SSDQ-13
2500+0.343137
5000+0.32598
12500+0.313725
25000+0.303922
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 40V 7A 8SOTape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate40V7A24 mOhm @ 6A, 10V3V @ 250µA19.1nC @ 10V1060pF @ 20V1.3W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMN4026SSD-13
DMN4026SSD-13
2500+0.281471
5000+0.262059
12500+0.252353
25000+0.242647
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 40V 7A 8SOTape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate40V7A24 mOhm @ 6A, 10V3V @ 250µA19.1nC @ 10V1060pF @ 20V1.3W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMC4029SSDQ-13
DMC4029SSDQ-13
2500+0.359657
5000+0.334853
12500+0.322451
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 40V 7A/5.1A 8SOTape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate40V7A, 5.1A24 mOhm @ 6A, 10V3V @ 250µA19.1nC @ 10V1060pF @ 20V1.3W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
DMC4029SSD-13
DMC4029SSD-13
2500+0.297108
5000+0.276618
12500+0.266373
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 40V 7A/5.1A 8SOTape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate40V7A, 5.1A24 mOhm @ 6A, 10V3V @ 250µA19.1nC @ 10V1060pF @ 20V1.3W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
APTMC60TL11CT3AG
APTMC60TL11CT3AG
100+173.303
Increments of 100
Leadtime
2-3 weeks
Microsemi CorporationMOSFET 4N-CH 1200V 28A SP3Bulk-Active4 N-Channel (Three Level Inverter)Standard1200V (1.2kV)28A98 mOhm @ 20A, 20V2.2V @ 1mA49nC @ 20V950pF @ 1000V125W-40°C ~ 150°C (TJ)Chassis MountSP3SP3
PMGD290UCEAX-Cut
PMGD290UCEAX
1+0.421569
10+0.339216
100+0.231078
500+0.173275
1000+0.129961
Increments of 1
Leadtime
2-3 weeks
Nexperia USA Inc.MOSFET N/P-CH 20V 6TSSOPCut Tape (CT)-ActiveN and P-ChannelLogic Level Gate20V725mA, 500mA380 mOhm @ 500mA, 4.5V1.3V @ 250µA0.68nC @ 4.5V83pF @ 10V280mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-3636-TSSOP