ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
BUK9K25-40EX-Cut
BUK9K25-40EX
1+0.921569
10+0.807843
100+0.619706
500+0.489863
Increments of 1
Leadtime
2-3 weeks
Nexperia USA Inc.MOSFET 2N-CH 40V 18.2A 56LFPAKCut Tape (CT)TrenchMOS™Active2 N-Channel (Dual)Logic Level Gate40V18.2A24 mOhm @ 5A, 10V2.1V @ 1mA6.3nC @ 5V701pF @ 25V32W-55°C ~ 175°C (TJ)Surface MountSOT-1205, 8-LFPAK56LFPAK56D
BUK9K17-60EX-Cut
BUK9K17-60EX
1+1.16667
10+1.0402
100+0.810882
500+0.669843
Increments of 1
Leadtime
2-3 weeks
Nexperia USA Inc.MOSFET 2N-CH 60V 26A 56LFPAKCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate60V26A15.6 mOhm @ 10A, 10V2.1V @ 1mA16.5nC @ 5V2223pF @ 25V53W-55°C ~ 175°C (TJ)Surface MountSOT-1205, 8-LFPAK56LFPAK56D
BUK7K8R7-40EX-Cut
BUK7K8R7-40EX
Leadtime
2-3 weeks
Nexperia USA Inc.MOSFET 2N-CH 40V 30A 56LFPAKCut Tape (CT)-2 N-Channel (Dual)Standard40V30A8.5 mOhm @ 15A, 10V4V @ 1mA21.8nC @ 10V1439pF @ 25V53W-55°C ~ 175°C (TJ)Surface MountSOT-1205, 8-LFPAK56LFPAK56D
DMN2013UFX-7-Cut
DMN2013UFX-7
1+0.696078
10+0.612745
100+0.469412
500+0.371098
1000+0.296882
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 20V 10A 6-DFNCut Tape (CT)-Active2 N-Channel (Dual) Common DrainLogic Level Gate20V10A11.5 mOhm @ 8.5A, 4.5V1.1V @ 250µA57.4nC @ 8V2607pF @ 10V780mW-55°C ~ 150°C (TJ)Surface Mount6-VFDFN Exposed PadW-DFN5020-6
DMG6301UDW-7-Cut
DMG6301UDW-7
1+0.431373
10+0.322549
100+0.182647
500+0.120961
1000+0.0927451
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 25V 0.24A SOT363Cut Tape (CT)-Active2 N-Channel (Dual)Standard25V240mA4 Ohm @ 400mA, 4.5V1.5V @ 250µA0.36nC @ 4.5V27.9pF @ 10V300mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
DMN2013UFX-7
DMN2013UFX-7
3000+0.261216
6000+0.243196
15000+0.234196
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 20V 10A 6-DFNTape & Reel (TR)-Active2 N-Channel (Dual) Common DrainLogic Level Gate20V10A11.5 mOhm @ 8.5A, 4.5V1.1V @ 250µA57.4nC @ 8V2607pF @ 10V780mW-55°C ~ 150°C (TJ)Surface Mount6-VFDFN Exposed PadW-DFN5020-6
DMG6301UDW-7
DMG6301UDW-7
3000+0.0782941
6000+0.0704608
15000+0.0626373
30000+0.0587255
75000+0.0520686
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 25V 0.24A SOT363Tape & Reel (TR)-Active2 N-Channel (Dual)Standard25V240mA4 Ohm @ 400mA, 4.5V1.5V @ 250µA0.36nC @ 4.5V27.9pF @ 10V300mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
CSD87333Q3D-Cut
CSD87333Q3D
1+1.32353
10+1.17941
100+0.919706
500+0.759784
1000+0.599824
Increments of 1
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 30V 15A 8SONCut Tape (CT)NexFET™Active2 N-Channel (Dual) AsymmetricalLogic Level Gate, 5V Drive30V15A14.3 mOhm @ 4A, 8V1.2V @ 250µA4.6nC @ 4.5V662pF @ 15V6W125°C (TJ)Surface Mount8-PowerTDFN8-VSON (3.3x3.3)
IRL6297SDTRPBF
IRL6297SDTRPBF
4800+0.45898
Increments of 4800
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 20V 15A DIRECTFETTape & Reel (TR)HEXFET®Active2 N-Channel (Dual)Logic Level Gate20V15A4.9 mOhm @ 15A, 4.5V1.1V @ 35µA54nC @ 10V2245pF @ 10V1.7W-40°C ~ 150°C (TJ)Surface MountDirectFET™ Isometric SADIRECTFET™ SA
CTLDM304P-M832DS TR
CTLDM304P-M832DS TR
3000+0.358235
6000+0.333529
15000+0.321176
Increments of 3000
Leadtime
2-3 weeks
Central Semiconductor CorpMOSFET 2P-CH 30V 4.2A TLM832DSTape & Reel (TR)-Active2 P-Channel (Dual)Standard30V4.2A70 mOhm @ 4.2A, 10V1.3V @ 250µA6.4nC @ 4.5V760pF @ 15V1.65W-55°C ~ 150°C (TJ)Surface Mount8-TDFN Exposed PadTLM832DS
CTLDM303N-M832DS TR
CTLDM303N-M832DS TR
3000+0.358235
6000+0.333529
15000+0.321176
Increments of 3000
Leadtime
2-3 weeks
Central Semiconductor CorpMOSFET 2N-CH 30V 3.6A TLM832DSTape & Reel (TR)-Active2 N-Channel (Dual)Standard30V3.6A40 mOhm @ 1.8A, 4.5V1.2V @ 250µA13nC @ 4.5V590pF @ 10V1.65W-55°C ~ 150°C (TJ)Surface Mount8-TDFN Exposed PadTLM832DS
CMLDM7484 TR
CMLDM7484 TR
3000+0.21349
6000+0.199716
15000+0.185941
Increments of 3000
Leadtime
2-3 weeks
Central Semiconductor CorpMOSFET N/P-CH 30V 0.45A SOT-563Tape & Reel (TR)-ActiveN and P-Channel ComplementaryStandard30V450mA460 mOhm @ 200mA, 4.5V1V @ 250µA0.79nC @ 4.5V45pF @ 25V150mW-65°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
CWDM305PD TR13
CWDM305PD TR13
2500+0.298529
Increments of 2500
Leadtime
2-3 weeks
Central Semiconductor CorpMOSFET 2P-CH 30V 5.3A 8SOICTape & Reel (TR)-Active2 P-Channel (Dual)Standard30V5.3A72 mOhm @ 2.7A, 10V3V @ 250µA7nC @ 5V590pF @ 10V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
CWDM305ND TR13
CWDM305ND TR13
2500+0.298529
5000+0.277941
12500+0.267647
Increments of 2500
Leadtime
2-3 weeks
Central Semiconductor CorpMOSFET 2N-CH 30V 5.8A 8SOICTape & Reel (TR)-Active2 N-Channel (Dual)Standard30V5.8A30 mOhm @ 2.9A, 10V3V @ 250µA6.3nC @ 5V560pF @ 10V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
CWDM305ND TR13-Cut
CWDM305ND TR13
1+0.803922
10+0.742157
25+0.657255
100+0.572549
250+0.498353
Increments of 1
Leadtime
2-3 weeks
Central Semiconductor CorpMOSFET 2N-CH 30V 5.8A 8SOICCut Tape (CT)-Active2 N-Channel (Dual)Standard30V5.8A30 mOhm @ 2.9A, 10V3V @ 250µA6.3nC @ 5V560pF @ 10V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
CTLDM304P-M832DS TR-Cut
CTLDM304P-M832DS TR
1+0.970588
10+0.890196
25+0.78902
100+0.687059
250+0.598
Increments of 1
Leadtime
2-3 weeks
Central Semiconductor CorpMOSFET 2P-CH 30V 4.2A TLM832DSCut Tape (CT)-Active2 P-Channel (Dual)Standard30V4.2A70 mOhm @ 4.2A, 10V1.3V @ 250µA6.4nC @ 4.5V760pF @ 15V1.65W-55°C ~ 150°C (TJ)Surface Mount8-TDFN Exposed PadTLM832DS
CTLDM303N-M832DS TR-Cut
CTLDM303N-M832DS TR
1+0.970588
10+0.890196
25+0.78902
100+0.687059
250+0.598
Increments of 1
Leadtime
2-3 weeks
Central Semiconductor CorpMOSFET 2N-CH 30V 3.6A TLM832DSCut Tape (CT)-Active2 N-Channel (Dual)Standard30V3.6A40 mOhm @ 1.8A, 4.5V1.2V @ 250µA13nC @ 4.5V590pF @ 10V1.65W-55°C ~ 150°C (TJ)Surface Mount8-TDFN Exposed PadTLM832DS
CMLDM7484 TR-Cut
CMLDM7484 TR
1+0.637255
10+0.567647
25+0.496471
100+0.425588
250+0.368863
Increments of 1
Leadtime
2-3 weeks
Central Semiconductor CorpMOSFET N/P-CH 30V 0.45A SOT-563Cut Tape (CT)-ActiveN and P-Channel ComplementaryStandard30V450mA460 mOhm @ 200mA, 4.5V1V @ 250µA0.79nC @ 4.5V45pF @ 25V150mW-65°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
FDZ1416NZ-Cut
FDZ1416NZ
1+0.764706
10+0.67549
100+0.518039
500+0.409471
1000+0.327588
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 4-WLCSPCut Tape (CT)PowerTrench®Active2 N-Channel (Dual) Common DrainStandard---1.3V @ 250µA17nC @ 4.5V-500mW-55°C ~ 150°C (TJ)Surface Mount4-XFBGA, WLCSP4-WLCSP
FDMA1028NZ_F021-Cut
FDMA1028NZ_F021
1+0.715686
10+0.626471
100+0.480196
500+0.379588
1000+0.303667
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 20V 3.7A MICROFETCut Tape (CT)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate20V3.7A68 mOhm @ 3.7A, 4.5V1.5V @ 250µA6nC @ 4.5V340pF @ 10V700mW-55°C ~ 150°C (TJ)Surface Mount6-WDFN Exposed PadMicroFET 2x2
FDZ1416NZ
FDZ1416NZ
5000+0.268353
10000+0.258412
Increments of 5000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 4-WLCSPTape & Reel (TR)PowerTrench®Active2 N-Channel (Dual) Common DrainStandard---1.3V @ 250µA17nC @ 4.5V-500mW-55°C ~ 150°C (TJ)Surface Mount4-XFBGA, WLCSP4-WLCSP
FDMA1028NZ_F021
FDMA1028NZ_F021
3000+0.267186
6000+0.248755
15000+0.239549
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 20V 3.7A MICROFETTape & Reel (TR)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate20V3.7A68 mOhm @ 3.7A, 4.5V1.5V @ 250µA6nC @ 4.5V340pF @ 10V700mW-55°C ~ 150°C (TJ)Surface Mount6-WDFN Exposed PadMicroFET 2x2
FDMD84100-Cut
FDMD84100
1+2.81373
10+2.52353
100+2.06755
500+1.7601
1000+1.48441
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 100V 7A 8-PQFNCut Tape (CT)PowerTrench®Active2 N-Channel (Dual) Common SourceStandard100V7A20 mOhm @ 7A, 10V4V @ 250µA16nC @ 10V980pF @ 50V2.1W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-PQFN (3.3x5)
FDMD84100
FDMD84100
3000+1.36912
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 100V 7A 8-PQFNTape & Reel (TR)PowerTrench®Active2 N-Channel (Dual) Common SourceStandard100V7A20 mOhm @ 7A, 10V4V @ 250µA16nC @ 10V980pF @ 50V2.1W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-PQFN (3.3x5)
SI1539CDL-T1-GE3-Cut
SI1539CDL-T1-GE3
1+0.431373
10+0.34902
25+0.319216
100+0.237549
250+0.215255
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET N/P-CH 30V SOT363Cut Tape (CT)TrenchFET®ActiveN and P-ChannelLogic Level Gate30V700mA, 500mA388 mOhm @ 600mA, 10V2.5V @ 250µA1.5nC @ 10V28pF @ 15V340mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363