ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
CSD75208W1015
CSD75208W1015
3000+0.161765
Increments of 3000
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2P-CH 20V 1.6A 6WLPTape & Reel (TR)NexFET™Active2 P-Channel (Dual) Common SourceLogic Level Gate20V1.6A68 mOhm @ 1A, 4.5V1.1V @ 250µA2.5nC @ 4.5V410pF @ 10V750mW-55°C ~ 150°C (TJ)Surface Mount6-UFBGA, DSBGA6-DSBGA
DMC3026LSD-13-Cut
DMC3026LSD-13
1+0.529412
10+0.452941
100+0.338431
500+0.265922
1000+0.20548
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 30V 6.5A/6.2A 8SOCut Tape (CT)-ActiveN and P-ChannelLogic Level Gate30V6.5A, 6.2A25 mOhm @ 6A, 10V3V @ 250µA13.2nC @ 10V641pF @ 15V1.2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMC3016LSD-13-Cut
DMC3016LSD-13
1+0.558824
10+0.477451
100+0.356275
500+0.279922
1000+0.216304
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 30V 8.2A/6.2A 8SOCut Tape (CT)-ActiveN and P-ChannelLogic Level Gate30V8.2A, 6.2A16 mOhm @ 12A, 10V2.3V @ 250µA25.1nC @ 10V1415pF @ 15V1.2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMC3026LSD-13
DMC3026LSD-13
2500+0.226569
5000+0.211961
12500+0.197333
25000+0.187108
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 30V 6.5A/6.2A 8SOTape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate30V6.5A, 6.2A25 mOhm @ 6A, 10V3V @ 250µA13.2nC @ 10V641pF @ 15V1.2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMC3016LSD-13
DMC3016LSD-13
2500+0.191471
5000+0.179118
12500+0.166765
25000+0.158118
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 30V 8.2A/6.2A 8SOTape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate30V8.2A, 6.2A16 mOhm @ 12A, 10V2.3V @ 250µA25.1nC @ 10V1415pF @ 15V1.2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMN53D0LDW-13
DMN53D0LDW-13
10000+0.0528039
Increments of 10000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 50V 0.36A SOT363Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate50V360mA1.6 Ohm @ 500mA, 10V1.5V @ 250µA0.6nC @ 4.5V46pF @ 25V310mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
DMC31D5UDJ-7B
DMC31D5UDJ-7B
10000+0.125078
30000+0.118588
Increments of 10000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 30V SOT963Tape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate30V220mA, 200mA1.5 Ohm @ 100mA, 4.5V1V @ 250µA0.38nC @ 4.5V22.6pF @ 15V350mW-55°C ~ 150°C (TJ)Surface MountSOT-963SOT-963
DMC31D5UDJ-7
DMC31D5UDJ-7
10000+0.119118
Increments of 10000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 30V SOT963Tape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate30V220mA, 200mA1.5 Ohm @ 100mA, 4.5V1V @ 250µA0.38nC @ 4.5V22.6pF @ 15V350mW-55°C ~ 150°C (TJ)Surface MountSOT-963SOT-963
DMN53D0LDW-7-Cut
DMN53D0LDW-7
1+0.421569
10+0.344118
100+0.182353
500+0.119941
1000+0.0815686
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 50V 0.36A SOT363Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate50V360mA1.6 Ohm @ 500mA, 10V1.5V @ 250µA0.6nC @ 4.5V46pF @ 25V310mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
DMN2023UCB4-7-Cut
DMN2023UCB4-7
1+0.617647
10+0.546078
100+0.418431
500+0.330804
1000+0.264647
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH X1-WLB1818-4Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate----29nC @ 4.5V-1.45W-55°C ~ 150°C (TJ)Surface Mount4-XFBGA, WLBGAX1-WLB1818-4
DMN53D0LDW-7
DMN53D0LDW-7
3000+0.0714314
6000+0.0621176
15000+0.0528039
30000+0.0496961
75000+0.0465882
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 50V 0.36A SOT363Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate50V360mA1.6 Ohm @ 500mA, 10V1.5V @ 250µA0.6nC @ 4.5V46pF @ 25V310mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
DMN2023UCB4-7
DMN2023UCB4-7
3000+0.232853
6000+0.216794
15000+0.208765
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH X1-WLB1818-4Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate----29nC @ 4.5V-1.45W-55°C ~ 150°C (TJ)Surface Mount4-XFBGA, WLBGAX1-WLB1818-4
BUK7K18-40EX-Cut
BUK7K18-40EX
1+0.892157
10+0.80098
100+0.624314
500+0.515725
Increments of 1
Leadtime
2-3 weeks
Nexperia USA Inc.MOSFET 2N-CH 40V 24.2A LFPAKCut Tape (CT)-Active2 N-Channel (Dual)Standard40V24.2A19 mOhm @ 10A, 10V4V @ 1mA11.8nC @ 10V808pF @ 25V38W-55°C ~ 175°C (TJ)Surface MountSOT-1205, 8-LFPAK56LFPAK56D
NTMD5838NLR2G-Cut
NTMD5838NLR2G
1+0.607843
10+0.521569
100+0.389216
500+0.305804
1000+0.236304
Increments of 1
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2N-CH 40V 7.4A 8SOICCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate40V7.4A25 mOhm @ 7A, 10V3V @ 250µA17nC @ 10V785pF @ 20V2.1W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
NTMFD4902NFT1G-Cut
NTMFD4902NFT1G
1+0.911765
10+0.817647
100+0.637745
500+0.526824
Increments of 1
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2N-CH 30V 8DFNCut Tape (CT)-Active2 N-Channel (Dual), SchottkyLogic Level Gate30V10.3A, 13.3A6.5 mOhm @ 10A, 10V2.2V @ 250µA9.7nC @ 4.5V1150pF @ 15V1.1W, 1.16W-55°C ~ 150°C (TJ)Surface Mount8-PowerTDFN8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
SI4501BDY-T1-GE3-Cut
SI4501BDY-T1-GE3
1+0.637255
10+0.559804
25+0.525882
100+0.429216
250+0.398667
Increments of 1
Leadtime
2-3 weeks
Vishay SiliconixMOSFET N/P-CH 30V/8V 8SOICCut Tape (CT)TrenchFET®ActiveN and P-Channel, Common DrainLogic Level Gate30V, 8V12A, 8A17 mOhm @ 10A, 10V2V @ 250µA25nC @ 10V805pF @ 15V4.5W, 3.1W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
SI4501BDY-T1-GE3
SI4501BDY-T1-GE3
2500+0.238824
5000+0.222353
12500+0.214118
Increments of 2500
Leadtime
2-3 weeks
Vishay SiliconixMOSFET N/P-CH 30V/8V 8SOICTape & Reel (TR)TrenchFET®ActiveN and P-Channel, Common DrainLogic Level Gate30V, 8V12A, 8A17 mOhm @ 10A, 10V2V @ 250µA25nC @ 10V805pF @ 15V4.5W, 3.1W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
TD9944TG-G
TD9944TG-G
3300+1.07039
Increments of 3300
Leadtime
2-3 weeks
Microchip TechnologyMOSFET 2N-CH 240V 8SOICTape & Reel (TR)-Active2 N-Channel (Dual)Standard240V-6 Ohm @ 500mA, 10V2V @ 1mA-125pF @ 25V--55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
TC8220K6-G
TC8220K6-G
3300+1.46423
Increments of 3300
Leadtime
2-3 weeks
Microchip TechnologyMOSFET 2N/2P-CH 200V 12VDFNTape & Reel (TR)-Active2 N and 2 P-ChannelStandard200V-6 Ohm @ 1A, 10V2.4V @ 1mA-56pF @ 25V--55°C ~ 150°C (TJ)Surface Mount12-VFDFN Exposed Pad12-DFN (4x4)
TC8020K6-G-M937
TC8020K6-G-M937
3000+6.3012
Increments of 3000
Leadtime
2-3 weeks
Microchip TechnologyMOSFET 6N/6P-CH 200V 56VQFNTape & Reel (TR)-Active6 N and 6 P-ChannelStandard200V-8 Ohm @ 1A, 10V2.4V @ 1mA-50pF @ 25V--55°C ~ 150°C (TJ)Surface Mount56-VFQFN Exposed Pad56-QFN (8x8)
TC7920K6-G
TC7920K6-G
3300+1.40364
Increments of 3300
Leadtime
2-3 weeks
Microchip TechnologyMOSFET 2N/2P-CH 200V 12VDFNTape & Reel (TR)-Active2 N and 2 P-ChannelStandard200V-10 Ohm @ 1A, 10V2.4V @ 1mA-52pF @ 25V--55°C ~ 150°C (TJ)Surface Mount12-VFDFN Exposed Pad12-DFN (4x4)
TC6320TG-G
TC6320TG-G
3300+1.01991
Increments of 3300
Leadtime
2-3 weeks
Microchip TechnologyMOSFET N/P-CH 200V 8SOICTape & Reel (TR)-ActiveN and P-ChannelStandard200V-7 Ohm @ 1A, 10V2V @ 1mA-110pF @ 25V--55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
TC6320K6-G
TC6320K6-G
3300+0.989618
Increments of 3300
Leadtime
2-3 weeks
Microchip TechnologyMOSFET N/P-CH 200V 8VDFNTape & Reel (TR)-ActiveN and P-ChannelStandard200V-7 Ohm @ 1A, 10V2V @ 1mA-110pF @ 25V--55°C ~ 150°C (TJ)Surface Mount8-VDFN Exposed Pad8-DFN (4x4)
TC6215TG-G
TC6215TG-G
3300+1.0502
Increments of 3300
Leadtime
2-3 weeks
Microchip TechnologyMOSFET N/P-CH 150V 8SOICTape & Reel (TR)-ActiveN and P-ChannelStandard150V-4 Ohm @ 2A, 10V2V @ 1mA-120pF @ 25V--55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
TC2320TG-G
TC2320TG-G
3300+1.10069
Increments of 3300
Leadtime
2-3 weeks
Microchip TechnologyMOSFET N/P-CH 200V 8SOICTape & Reel (TR)-ActiveN and P-ChannelStandard200V-7 Ohm @ 1A, 10V2V @ 1mA-110pF @ 25V--55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC