ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
CSD83325L
CSD83325L
3000+0.205882
Increments of 3000
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 12V 52A 6PICOSTARTape & Reel (TR)NexFET™Active2 N-Channel (Dual) Common DrainStandard----10.9nC @ 4.5V-2.3W-55°C ~ 150°C (TJ)Surface Mount6-XFBGA6-PicoStar
SQ4284EY-T1_GE3
SQ4284EY-T1_GE3
2500+0.651961
Increments of 2500
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 40V 8A 8SOICTape & Reel (TR)Automotive, AEC-Q101, TrenchFET®Active2 N-Channel (Dual)Logic Level Gate40V-13.5 mOhm @ 7A, 10V2.5V @ 250µA45nC @ 10V2200pF @ 25V3.9W-55°C ~ 175°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
SQ4940AEY-T1_GE3
SQ4940AEY-T1_GE3
2500+0.432353
5000+0.410735
Increments of 2500
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 40V 8A 8SOICTape & Reel (TR)Automotive, AEC-Q101, TrenchFET®Active2 N-Channel (Dual)Logic Level Gate40V8A24 mOhm @ 5.3A, 10V2.5V @ 250µA43nC @ 10V741pF @ 20V4W-55°C ~ 175°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
DMHC4035LSD-13-Cut
DMHC4035LSD-13
1+0.872549
10+0.782353
100+0.609706
500+0.503647
1000+0.397608
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N/2P-CH 40V 8-SOICCut Tape (CT)-Active2 N and 2 P-Channel (H-Bridge)Logic Level Gate40V4.5A, 3.7A45 mOhm @ 3.9A, 10V3V @ 250µA12.5nC @ 10V574pF @ 20V1.5W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
CAS120M12BM2
CAS120M12BM2
1+323.529
Increments of 1
Leadtime
2-3 weeks
Cree/WolfspeedMOSFET 2N-CH 1200V 193A MODULEBulkZ-Rec®Active2 N-Channel (Half Bridge)Standard1200V (1.2kV)193A16 mOhm @ 120A, 20V2.6V @ 6mA (Typ)378nC @ 20V6300pF @ 1000V925W-40°C ~ 150°C (TJ)Chassis MountModuleModule
DMC6040SSD-13-Cut
DMC6040SSD-13
1+0.666667
10+0.585294
100+0.448529
500+0.354569
1000+0.283657
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 60V 5.1A/3.1A 8-SOCut Tape (CT)-ActiveN and P-ChannelLogic Level Gate60V5.1A, 3.1A40 mOhm @ 8A, 10V3V @ 250µA20.8nC @ 10V1130pF @ 15V1.24W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMC6040SSD-13
DMC6040SSD-13
2500+0.249569
5000+0.232363
12500+0.223755
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 60V 5.1A/3.1A 8-SOTape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate60V5.1A, 3.1A40 mOhm @ 8A, 10V3V @ 250µA20.8nC @ 10V1130pF @ 15V1.24W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
AUIRFN8459TR
AUIRFN8459TR
4000+1.01912
Increments of 4000
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 40V 50A 8PQFNTape & Reel (TR)HEXFET®Active2 N-Channel (Dual)Standard40V50A5.9 mOhm @ 40A, 10V3.9V @ 50µA60nC @ 10V2250pF @ 25V50W-55°C ~ 175°C (TJ)Surface Mount8-PowerTDFNPQFN (5x6)
IRL6297SDTRPBF-Cut
IRL6297SDTRPBF
1+1.17647
10+1.04902
100+0.817549
500+0.675353
1000+0.533176
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 20V 15A DIRECTFETCut Tape (CT)HEXFET®2 N-Channel (Dual)Logic Level Gate20V15A4.9 mOhm @ 15A, 4.5V1.1V @ 35µA54nC @ 10V2245pF @ 10V1.7W-40°C ~ 150°C (TJ)Surface MountDirectFET™ Isometric SADIRECTFET™ SA
MCH6664-TL-W-Cut
MCH6664-TL-W
1+0.529412
10+0.430392
100+0.292843
500+0.219608
1000+0.164706
Increments of 1
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2P-CH 30V 1.5A SOT363Cut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate30V1.5A325 mOhm @ 800mA, 10V2.6V @ 1mA2.2nC @ 10V82pF @ 10V800mW150°C (TJ)Surface Mount6-SMD, Flat LeadsSC-88FL/ MCPH6
MCH6661-TL-W-Cut
MCH6661-TL-W
1+0.529412
10+0.430392
100+0.292843
500+0.219608
1000+0.164706
Increments of 1
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2N-CH 30V 1.8A SOT363Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate, 4V Drive30V1.8A188 mOhm @ 900mA, 10V2.6V @ 1mA2nC @ 10V88pF @ 10V800mW150°C (TJ)Surface Mount6-SMD, Flat LeadsSC-88FL/ MCPH6
ECH8695R-TL-W-Cut
ECH8695R-TL-W
1+0.421569
10+0.357843
100+0.267157
500+0.209941
1000+0.162225
Increments of 1
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2N-CH 24V 11A SOT28Cut Tape (CT)-Active2 N-Channel (Dual) Common DrainLogic Level Gate, 2.5V Drive24V11A9.1 mOhm @ 5A, 4.5V1.3V @ 1mA10nC @ 4.5V-1.4W150°C (TJ)Surface Mount8-SMD, Flat LeadSOT-28FL/ECH8
MCH6664-TL-W
MCH6664-TL-W
3000+0.146578
6000+0.137696
15000+0.128814
30000+0.118157
Increments of 3000
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2P-CH 30V 1.5A SOT363Tape & Reel (TR)-Active2 P-Channel (Dual)Logic Level Gate30V1.5A325 mOhm @ 800mA, 10V2.6V @ 1mA2.2nC @ 10V82pF @ 10V800mW150°C (TJ)Surface Mount6-SMD, Flat LeadsSC-88FL/ MCPH6
MCH6661-TL-W
MCH6661-TL-W
3000+0.146578
6000+0.137696
15000+0.128814
30000+0.118157
Increments of 3000
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2N-CH 30V 1.8A SOT363Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate, 4V Drive30V1.8A188 mOhm @ 900mA, 10V2.6V @ 1mA2nC @ 10V88pF @ 10V800mW150°C (TJ)Surface Mount6-SMD, Flat LeadsSC-88FL/ MCPH6
ECH8695R-TL-W
ECH8695R-TL-W
3000+0.143608
6000+0.134343
15000+0.125078
30000+0.118588
Increments of 3000
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2N-CH 24V 11A SOT28Tape & Reel (TR)-Active2 N-Channel (Dual) Common DrainLogic Level Gate, 2.5V Drive24V11A9.1 mOhm @ 5A, 4.5V1.3V @ 1mA10nC @ 4.5V-1.4W150°C (TJ)Surface Mount8-SMD, Flat LeadSOT-28FL/ECH8
STL20DN10F7
STL20DN10F7
3000+1.0798
Increments of 3000
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2N-CH 100V 20A PWRFLAT56Tape & Reel (TR)DeepGATE™, STripFET™ VIIActive2 N-Channel (Dual)Standard100V20A67 mOhm @ 2.5A, 10V4.5V @ 250µA7.8nC @ 10V408pF @ 50V62.5W-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFNPowerFlat™ (5x6)
STL13DP10F6
STL13DP10F6
3000+0.626912
6000+0.595569
Increments of 3000
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2P-CH 100V 13A PWRFLAT56Tape & Reel (TR)DeepGATE™, STripFET™ VIActive2 P-Channel (Dual)Logic Level Gate100V13A180 mOhm @ 1.7A, 10V4V @ 250µA16.5nC @ 10V864pF @ 25V62.5W-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFNPowerFlat™ (5x6)
STL20DN10F7-Cut
STL20DN10F7
1+2.43137
10+2.18333
100+1.7548
500+1.44173
1000+1.19458
Increments of 1
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2N-CH 100V 20A PWRFLAT56Cut Tape (CT)DeepGATE™, STripFET™ VIIActive2 N-Channel (Dual)Standard100V20A67 mOhm @ 2.5A, 10V4.5V @ 250µA7.8nC @ 10V408pF @ 50V62.5W-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFNPowerFlat™ (5x6)
STL13DP10F6-Cut
STL13DP10F6
1+1.51961
10+1.36078
100+1.06078
500+0.876333
1000+0.691843
Increments of 1
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2P-CH 100V 13A PWRFLAT56Cut Tape (CT)DeepGATE™, STripFET™ VIActive2 P-Channel (Dual)Logic Level Gate100V13A180 mOhm @ 1.7A, 10V4V @ 250µA16.5nC @ 10V864pF @ 25V62.5W-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFNPowerFlat™ (5x6)
CAS300M17BM2
CAS300M17BM2
1+841.176
Increments of 1
Leadtime
2-3 weeks
Cree/WolfspeedMOSFET 2N-CH 1700V 325A MODULETrayZ-Rec®Active2 N-Channel (Half Bridge)Standard1700V (1.7kV)325A10 mOhm @ 225A, 20V2.3V @ 15mA (Typ)1076nC @ 20V20000pF @ 1000V1760W-40°C ~ 150°C (TJ)Chassis MountModuleModule
CCS020M12CM2
CCS020M12CM2
1+194.118
Increments of 1
Leadtime
2-3 weeks
Cree/WolfspeedMOSFET 6N-CH 1200V 29.5A MODULETrayZ-Rec®Active6 N-Channel (3-Phase Bridge)Standard1200V (1.2kV)29.5A98 mOhm @ 20A, 20V2.2V @ 1mA (Typ)61.5nC @ 20V900pF @ 800V167W-40°C ~ 150°C (TJ)Chassis MountModuleModule
CSD75208W1015T-Cut
CSD75208W1015T
1+0.578431
10+0.506863
100+0.388333
Increments of 1
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2P-CH 20V 1.6A 6WLPCut Tape (CT)NexFET™Active2 P-Channel (Dual) Common SourceLogic Level Gate20V1.6A68 mOhm @ 1A, 4.5V1.1V @ 250µA2.5nC @ 4.5V410pF @ 10V750mW-55°C ~ 150°C (TJ)Surface Mount6-UFBGA, DSBGA6-DSBGA
CSD75208W1015-Cut
CSD75208W1015
1+0.588235
10+0.5
100+0.373235
500+0.293255
1000+0.226598
Increments of 1
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2P-CH 20V 1.6A 6WLPCut Tape (CT)NexFET™Active2 P-Channel (Dual) Common SourceLogic Level Gate20V1.6A68 mOhm @ 1A, 4.5V1.1V @ 250µA2.5nC @ 4.5V410pF @ 10V750mW-55°C ~ 150°C (TJ)Surface Mount6-UFBGA, DSBGA6-DSBGA
CSD75208W1015T
CSD75208W1015T
250+0.372549
1250+0.186275
Increments of 250
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2P-CH 20V 1.6A 6WLPTape & Reel (TR)NexFET™Active2 P-Channel (Dual) Common SourceLogic Level Gate20V1.6A68 mOhm @ 1A, 4.5V1.1V @ 250µA2.5nC @ 4.5V410pF @ 10V750mW-55°C ~ 150°C (TJ)Surface Mount6-UFBGA, DSBGA6-DSBGA
BSS8402DWQ-7
BSS8402DWQ-7
3000+0.143608
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 60V/50VTape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate60V, 50V115mA, 130mA13.5 Ohm @ 500mA, 10V2.5V @ 250µA-50pF @ 25V200mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363