ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
VT6K1T2CR-Cut
VT6K1T2CR
1+0.411765
10+0.371569
25+0.267059
100+0.207843
250+0.130627
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2N-CH 20V 0.1A VMT6Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate, 1.2V Drive20V100mA3.5 Ohm @ 100mA, 4.5V1V @ 100µA-7.1pF @ 10V120mW150°C (TJ)Surface Mount6-SMD, Flat LeadsVMT6
VT6J1T2CR-Cut
VT6J1T2CR
1+0.5
10+0.362745
25+0.281961
100+0.213529
250+0.151098
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2P-CH 20V 0.1A VMT6Cut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate, 1.2V Drive20V100mA3.8 Ohm @ 100mA, 4.5V1V @ 100µA-15pF @ 10V120mW150°C (TJ)Surface Mount6-SMD, Flat LeadsVMT6
UM6K34NTCN-Cut
UM6K34NTCN
1+0.441176
10+0.314706
25+0.245098
100+0.18549
250+0.131216
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2N-CH 50V 0.2A UMT6Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate, 0.9V Drive50V200mA2.2 Ohm @ 200mA, 4.5V800mV @ 1mA-26pF @ 10V120mW150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363UMT6
UM6K33NTN-Cut
UM6K33NTN
1+0.421569
10+0.302941
25+0.235294
100+0.178137
250+0.126039
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2N-CH 50V 0.2A UMT6Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate, 1.2V Drive50V200mA2.2 Ohm @ 200mA, 4.5V1V @ 1mA-25pF @ 10V120mW150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363UMT6
TT8M3TR-Cut
TT8M3TR
1+0.519608
10+0.410784
25+0.346667
100+0.282059
250+0.233686
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 20V 2.5A TSST8Cut Tape (CT)-ActiveN and P-ChannelLogic Level Gate, 1.5V Drive20V2.5A, 2.4A72 mOhm @ 2.5A, 4.5V1V @ 1mA3.6nC @ 4.5V260pF @ 10V1W150°C (TJ)Surface Mount8-SMD, Flat Lead8-TSST
TT8M1TR-Cut
TT8M1TR
1+0.568627
10+0.443137
25+0.373725
100+0.304314
250+0.252157
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 20V 2.5A TSST8Cut Tape (CT)-ActiveN and P-ChannelLogic Level Gate, 1.5V Drive20V2.5A72 mOhm @ 2.5A, 4.5V1V @ 1mA3.6nC @ 4.5V260pF @ 10V1W150°C (TJ)Surface Mount8-SMD, Flat Lead8-TSST
TT8K1TR-Cut
TT8K1TR
1+0.441176
10+0.373529
25+0.326667
100+0.279902
250+0.242588
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2N-CH 20V 2.5A TSST8Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate, 1.5V Drive20V2.5A72 mOhm @ 2.5A, 4.5V1V @ 1mA3.6nC @ 4.5V260pF @ 10V1W150°C (TJ)Surface Mount8-SMD, Flat Lead8-TSST
TT8K11TCR-Cut
TT8K11TCR
1+0.568627
10+0.443137
25+0.373725
100+0.304314
250+0.252157
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2N-CH 30V 3A TSST8Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate, 4V Drive30V3A71 mOhm @ 3A, 10V2.5V @ 1A2.5nC @ 5V140pF @ 10V1W150°C (TJ)Surface Mount8-SMD, Flat Lead8-TSST
TT8J13TCR-Cut
TT8J13TCR
1+0.539216
10+0.421569
25+0.355686
100+0.289412
250+0.239843
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2P-CH 12V 2.5A TSST8Cut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate, 1.5V Drive12V2.5A62 mOhm @ 2.5A, 4.5V1V @ 1mA16nC @ 4.5V2000pF @ 6V1W150°C (TJ)Surface Mount8-SMD, Flat Lead8-TSST
TT8J11TCR-Cut
TT8J11TCR
1+0.470588
10+0.394118
25+0.345098
100+0.295784
250+0.256392
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2P-CH 12V 3.5A TSST8Cut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate, 1.5V Drive12V3.5A43 mOhm @ 3.5A, 4.5V1V @ 1mA22nC @ 4.5V2600pF @ 6V650mW150°C (TJ)Surface Mount8-SMD, Flat Lead8-TSST
SH8K41GZETB-Cut
SH8K41GZETB
1+0.794118
10+0.694118
25+0.61451
100+0.535294
250+0.465961
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2N-CH 80V 3.4A 8SOPCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate80V3.4A130 mOhm @ 3.4A, 10V2.5V @ 1mA6.6nC @ 5V600pF @ 10V1.4W150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
QS8J13TR-Cut
QS8J13TR
1+0.72549
10+0.614706
25+0.538039
100+0.461275
250+0.399725
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2P-CH 12V 5.5A TSMT8Cut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate12V5.5A22 mOhm @ 5.5A, 4.5V1V @ 1mA60nC @ 4.5V6300pF @ 6V1.25W150°C (TJ)Surface Mount8-SMD, Flat LeadTSMT8
QS8J11TCR-Cut
QS8J11TCR
1+0.480392
10+0.402941
25+0.352549
100+0.302157
250+0.261882
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2P-CH 12V 3.5A TSMT8Cut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate, 1.5V Drive12V3.5A43 mOhm @ 3.5A, 4.5V1V @ 1mA22nC @ 4.5V2600pF @ 6V550mW150°C (TJ)Surface Mount8-SMD, Flat LeadTSMT8
QH8MA2TCR-Cut
QH8MA2TCR
1+0.54902
10+0.432353
25+0.364706
100+0.296863
250+0.246
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 30V 4.5A/3A TSMT8Cut Tape (CT)-ActiveN and P-ChannelLogic Level Gate30V4.5A, 3A35 mOhm @ 4.5A, 10V2.5V @ 1mA8.4nC @ 10V365pF @ 10V1.25W150°C (TJ)Surface Mount8-SMD, Flat LeadTSMT8
HS8K11TB-Cut
HS8K11TB
1+0.5
10+0.419608
25+0.367451
100+0.314902
250+0.272902
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2N-CH 30V 7A/11A HSMLCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate30V7A, 11A17.9 mOhm @ 7A, 10V2.5V @ 1mA11.1nC @ 10V500pF @ 15V2W150°C (TJ)Surface Mount8-UDFN Exposed PadHSML3030L10
HP8KA1TB-Cut
HP8KA1TB
1+0.892157
10+0.779412
25+0.690196
100+0.601177
250+0.523255
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2N-CH 30V 14A HSOP8Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate30V14A5 mOhm @ 14A, 10V2.5V @ 10mA24nC @ 4.5V2550pF @ 15V3W150°C (TJ)Surface Mount8-PowerTDFN8-HSOP
EM6K34T2CR-Cut
EM6K34T2CR
1+0.441176
10+0.314706
25+0.245098
100+0.18549
250+0.131216
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2N-CH 50V 0.2A EMT6Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate, 0.9V Drive50V200mA2.2 Ohm @ 200mA, 4.5V800mV @ 1mA-26pF @ 10V120mW150°C (TJ)Surface MountSOT-563, SOT-666EMT6
EM6K31GT2R-Cut
EM6K31GT2R
1+0.568627
10+0.410784
25+0.319216
100+0.241667
250+0.17098
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET 2N-CH 60V 0.25A EMT6Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate, 2.5V Drive60V250mA2.4 Ohm @ 250mA, 10V2.3V @ 1mA-15pF @ 25V120mW150°C (TJ)Surface MountSOT-563, SOT-666EMT6
IRFH4257DTRPBF-Cut
IRFH4257DTRPBF
1+2.03922
Increments of 1
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 25V 25A 24PQFNCut Tape (CT)HEXFET®Obsolete2 N-Channel (Dual)Logic Level Gate25V25A3.4 mOhm @ 25A, 10V2.1V @ 35µA15nC @ 4.5V1321pF @ 13V25W, 28W-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFNDual PQFN (5x4)
IRFH4257DTRPBF
IRFH4257DTRPBF
Leadtime
2-3 weeks
Infineon TechnologiesMOSFET 2N-CH 25V 25A 24PQFNTape & Reel (TR)HEXFET®Obsolete2 N-Channel (Dual)Logic Level Gate25V25A3.4 mOhm @ 25A, 10V2.1V @ 35µA15nC @ 4.5V1321pF @ 13V25W, 28W-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFNDual PQFN (5x4)
APTMC120TAM33CTPAG
APTMC120TAM33CTPAG
1+726.5
Increments of 1
Leadtime
2-3 weeks
Microsemi CorporationMOSFET 6N-CH 1200V 78A SP6-PBulk-Active6 N-Channel (3-Phase Bridge)Standard1200V (1.2kV)78A33 mOhm @ 60A, 20V2.2V @ 3mA (Typ)148nC @ 20V2850pF @ 1000V370W-40°C ~ 150°C (TJ)Chassis MountSP6SP6-P
APTMC120AM55CT1AG
APTMC120AM55CT1AG
1+180.804
10+172.079
25+165.845
Increments of 1
Leadtime
2-3 weeks
Microsemi CorporationMOSFET 2N-CH 1200V 55A SP1Bulk-Active2 N-Channel (Half Bridge)Standard1200V (1.2kV)55A49 mOhm @ 40A, 20V2.2V @ 2mA (Typ)98nC @ 20V1900pF @ 1000V250W-40°C ~ 150°C (TJ)Chassis MountSP1SP1
APTMC120AM25CT3AG
APTMC120AM25CT3AG
1+378.255
10+364.241
Increments of 1
Leadtime
2-3 weeks
Microsemi CorporationMOSFET 2N-CH 1200V 105A SP3FBulk-Active2 N-Channel (Half Bridge)Standard1200V (1.2kV)105A25 mOhm @ 80A, 20V2.2V @ 4mA (Typ)197nC @ 20V3800pF @ 1000V500W-40°C ~ 150°C (TJ)Chassis MountSP3SP3
APTMC120AM16CD3AG
APTMC120AM16CD3AG
1+566.971
Increments of 1
Leadtime
2-3 weeks
Microsemi CorporationMOSFET 2N-CH 1200V 131A D3Bulk-Active2 N-Channel (Half Bridge)Standard1200V (1.2kV)131A20 mOhm @ 100A, 20V2.2V @ 5mA (Typ)246nC @ 20V4750pF @ 1000V625W-40°C ~ 150°C (TJ)Chassis MountD-3 ModuleD3
APTMC120AM08CD3AG
APTMC120AM08CD3AG
1+1014.8
Increments of 1
Leadtime
2-3 weeks
Microsemi CorporationMOSFET 2N-CH 1200V 250A D3Bulk-Active2 N-Channel (Half Bridge)Standard1200V (1.2kV)250A10 mOhm @ 200A, 20V2.2V @ 10mA (Typ)490nC @ 20V9500pF @ 1000V1100W-40°C ~ 150°C (TJ)Chassis MountD-3 ModuleD3