ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
SQJ951EP-T1_GE3
SQJ951EP-T1_GE3
3000+0.754412
Increments of 3000
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2P-CH 30V 30A PPAKTape & Reel (TR)Automotive, AEC-Q101, TrenchFET®Active2 P-Channel (Dual)Standard30V30A17 mOhm @ 7.5A, 10V2.5V @ 250µA50nC @ 10V1680pF @ 10V56W-55°C ~ 175°C (TJ)Surface MountPowerPAK® SO-8 DualPowerPAK® SO-8 Dual
SSM6N56FE,LM-Cut
SSM6N56FE,LM
1+0.558824
10+0.40098
25+0.311765
100+0.23598
250+0.16698
Increments of 1
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 20V 0.8ACut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate, 1.5V Drive20V800mA235 mOhm @ 800mA, 4.5V1V @ 1mA1nC @ 4.5V55pF @ 10V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6
SSM6N56FE,LM
SSM6N56FE,LM
4000+0.0864706
8000+0.0778235
12000+0.0691765
28000+0.0648529
Increments of 4000
Leadtime
2-3 weeks
Toshiba Semiconductor and StorageMOSFET 2N-CH 20V 0.8ATape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate, 1.5V Drive20V800mA235 mOhm @ 800mA, 4.5V1V @ 1mA1nC @ 4.5V55pF @ 10V150mW150°C (TJ)Surface MountSOT-563, SOT-666ES6
BUK9K134-100EX-Cut
BUK9K134-100EX
1+0.921569
10+0.807843
100+0.619706
500+0.489863
Increments of 1
Leadtime
2-3 weeks
Nexperia USA Inc.MOSFET 2N-CH 100V 8.5A 56LFPAKCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate100V8.5A159 mOhm @ 5A, 5V2.1V @ 1mA7.4nC @ 5V755pF @ 25V32W-55°C ~ 175°C (TJ)Surface MountSOT-1205, 8-LFPAK56LFPAK56D
BUK9K12-60EX-Cut
BUK9K12-60EX
1+1.5098
10+1.34706
100+1.05059
500+0.867863
Increments of 1
Leadtime
2-3 weeks
Nexperia USA Inc.MOSFET 2N-CH 60V 35A 56LFPAKCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate60V35A10.7 mOhm @ 15A, 10V2.1V @ 1mA24.5nC @ 5V3470pF @ 25V68W-55°C ~ 175°C (TJ)Surface MountSOT-1205, 8-LFPAK56LFPAK56D
BUK7K6R2-40EX-Cut
BUK7K6R2-40EX
1+1.40196
10+1.25098
100+0.97549
500+0.805824
Increments of 1
Leadtime
2-3 weeks
Nexperia USA Inc.MOSFET 2N-CH 40V 40A 56LFPAKCut Tape (CT)-Active2 N-Channel (Dual)Standard40V40A5.8 mOhm @ 20A, 10V4V @ 1mA32.3nC @ 10V2210pF @ 25V68W-55°C ~ 175°C (TJ)Surface MountSOT-1205, 8-LFPAK56LFPAK56D
BUK7K52-60EX-Cut
BUK7K52-60EX
1+0.921569
10+0.807843
100+0.619706
500+0.489863
Increments of 1
Leadtime
2-3 weeks
Nexperia USA Inc.MOSFET 2N-CH 60V 15.4A LFPAKCut Tape (CT)-Active2 N-Channel (Dual)Standard60V15.4A45 mOhm @ 5A, 10V4V @ 1mA9.2nC @ 10V535pF @ 25V32W-55°C ~ 175°C (TJ)Surface MountSOT-1205, 8-LFPAK56LFPAK56D
BUK7K12-60EX-Cut
BUK7K12-60EX
1+1.5098
10+1.34706
100+1.05059
500+0.867863
Increments of 1
Leadtime
2-3 weeks
Nexperia USA Inc.MOSFET 2N-CH 60V 40A LFPAKCut Tape (CT)-Active2 N-Channel (Dual)Standard60V40A43 mOhm @ 5A, 10V4V @ 1mA10.4nC @ 10V617pF @ 25V68W-55°C ~ 175°C (TJ)Surface MountSOT-1205, 8-LFPAK56LFPAK56D
SH8M41GZETB-Cut
SH8M41GZETB
1+1.38235
10+1.22255
25+1.10431
100+0.966373
250+0.848039
Increments of 1
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 80V 3.4A/2.6A 8SOPCut Tape (CT)-ActiveN and P-ChannelLogic Level Gate, 4V Drive80V3.4A, 2.6A130 mOhm @ 3.4A, 10V2.5V @ 1mA9.2nC @ 5V600pF @ 10V2W150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
SH8M41GZETB
SH8M41GZETB
2500+0.536118
5000+0.509314
Increments of 2500
Leadtime
2-3 weeks
Rohm SemiconductorMOSFET N/P-CH 80V 3.4A/2.6A 8SOPTape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate, 4V Drive80V3.4A, 2.6A130 mOhm @ 3.4A, 10V2.5V @ 1mA9.2nC @ 5V600pF @ 10V2W150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
FDMS3610S-Cut
FDMS3610S
1+2.05882
10+1.84902
100+1.48608
500+1.22092
1000+1.01163
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 25V 17.5A/30A 8-MLPCut Tape (CT)PowerTrench®Active2 N-Channel (Dual) AsymmetricalLogic Level Gate25V17.5A, 30A5 mOhm @ 17.5A, 10V2V @ 250µA26nC @ 10V1570pF @ 13V1W-55°C ~ 150°C (TJ)Surface Mount8-PowerTDFNPower56
FDMS3606S-Cut
FDMS3606S
1+1.40196
10+1.25098
100+0.97549
500+0.805824
1000+0.636176
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 13A/27A PWR56Cut Tape (CT)PowerTrench®Active2 N-Channel (Dual) AsymmetricalLogic Level Gate30V13A, 27A8 mOhm @ 13A, 10V2.7V @ 250µA29nC @ 10V1785pF @ 15V1W-55°C ~ 150°C (TJ)Surface Mount8-PowerTDFNPower56
FDMS3604S-Cut
FDMS3604S
1+1.33333
10+1.18824
100+0.926667
500+0.765529
1000+0.604373
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 13A/23A 8-PQFNCut Tape (CT)PowerTrench®Active2 N-Channel (Dual) AsymmetricalLogic Level Gate30V13A, 23A8 mOhm @ 13A, 10V2.7V @ 250µA29nC @ 10V1785pF @ 15V1W-55°C ~ 150°C (TJ)Surface Mount8-PowerTDFNPower56
FDMS3602AS-Cut
FDMS3602AS
1+1.57843
10+1.40784
100+1.09745
500+0.906549
1000+0.715696
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 25V 15A/26A POWER56Cut Tape (CT)PowerTrench®Active2 N-Channel (Dual) AsymmetricalLogic Level Gate25V15A, 26A5.6 mOhm @ 15A, 10V3V @ 250µA27nC @ 10V1770pF @ 13V2.2W, 2.5W-55°C ~ 150°C (TJ)Surface Mount8-PowerTDFNPower56
FDMS3600AS-Cut
FDMS3600AS
1+1.67647
10+1.50098
100+1.17059
500+0.96698
1000+0.763412
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 25V 15A/30A 8-PQFNCut Tape (CT)PowerTrench®Active2 N-Channel (Dual) AsymmetricalLogic Level Gate25V15A, 30A5.6 mOhm @ 15A, 10V2.7V @ 250µA27nC @ 10V1770pF @ 13V2.2W, 2.5W-55°C ~ 150°C (TJ)Surface Mount8-PowerTDFNPower56
FDMC7200S-Cut
FDMC7200S
1+0.598039
10+0.52451
100+0.402353
500+0.318098
1000+0.254471
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 7A/13A POWER33Cut Tape (CT)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate30V7A, 13A22 mOhm @ 6A, 10V3V @ 250µA10nC @ 10V660pF @ 15V700mW, 1W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFNPower33
FDMC7200-Cut
FDMC7200
1+0.598039
10+0.52451
100+0.402353
500+0.318098
1000+0.254471
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 6A/8A POWER33Cut Tape (CT)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate30V6A, 8A23.5 mOhm @ 6A, 10V3V @ 250µA10nC @ 10V660pF @ 15V700mW, 900mW-55°C ~ 150°C (TJ)Surface Mount8-WDFN Exposed PadPower33
FDMS3610S
FDMS3610S
3000+0.914431
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 25V 17.5A/30A 8-MLPTape & Reel (TR)PowerTrench®Active2 N-Channel (Dual) AsymmetricalLogic Level Gate25V17.5A, 30A5 mOhm @ 17.5A, 10V2V @ 250µA26nC @ 10V1570pF @ 13V1W-55°C ~ 150°C (TJ)Surface Mount8-PowerTDFNPower56
FDMS3606S
FDMS3606S
3000+0.576471
6000+0.547647
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 13A/27A PWR56Tape & Reel (TR)PowerTrench®Active2 N-Channel (Dual) AsymmetricalLogic Level Gate30V13A, 27A8 mOhm @ 13A, 10V2.7V @ 250µA29nC @ 10V1785pF @ 15V1W-55°C ~ 150°C (TJ)Surface Mount8-PowerTDFNPower56
FDMS3604S
FDMS3604S
3000+0.547647
6000+0.520265
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 13A/23A 8-PQFNTape & Reel (TR)PowerTrench®Active2 N-Channel (Dual) AsymmetricalLogic Level Gate30V13A, 23A8 mOhm @ 13A, 10V2.7V @ 250µA29nC @ 10V1785pF @ 15V1W-55°C ~ 150°C (TJ)Surface Mount8-PowerTDFNPower56
FDMS3602AS
FDMS3602AS
3000+0.648529
6000+0.616108
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 25V 15A/26A POWER56Tape & Reel (TR)PowerTrench®Active2 N-Channel (Dual) AsymmetricalLogic Level Gate25V15A, 26A5.6 mOhm @ 15A, 10V3V @ 250µA27nC @ 10V1770pF @ 13V2.2W, 2.5W-55°C ~ 150°C (TJ)Surface Mount8-PowerTDFNPower56
FDMS3600AS
FDMS3600AS
3000+0.691765
6000+0.657176
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 25V 15A/30A 8-PQFNTape & Reel (TR)PowerTrench®Active2 N-Channel (Dual) AsymmetricalLogic Level Gate25V15A, 30A5.6 mOhm @ 15A, 10V2.7V @ 250µA27nC @ 10V1770pF @ 13V2.2W, 2.5W-55°C ~ 150°C (TJ)Surface Mount8-PowerTDFNPower56
FDMC7200S
FDMC7200S
3000+0.223902
6000+0.208461
15000+0.200735
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 7A/13A POWER33Tape & Reel (TR)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate30V7A, 13A22 mOhm @ 6A, 10V3V @ 250µA10nC @ 10V660pF @ 15V700mW, 1W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFNPower33
FDMC7200
FDMC7200
3000+0.223902
6000+0.208461
15000+0.200735
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 30V 6A/8A POWER33Tape & Reel (TR)PowerTrench®Active2 N-Channel (Dual)Logic Level Gate30V6A, 8A23.5 mOhm @ 6A, 10V3V @ 250µA10nC @ 10V660pF @ 15V700mW, 900mW-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFNPower33
FDMD8280-Cut
FDMD8280
1+2.93137
10+2.62941
100+2.15461
500+1.83418
1000+1.5469
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 80V 11A 6-MLPCut Tape (CT)PowerTrench®Active2 N-Channel (Dual)Standard80V11A8.2 mOhm @ 11A, 10V4V @ 250µA44nC @ 10V3050pF @ 40V1W-55°C ~ 150°C (TJ)Surface Mount12-PowerWDFN12-Power3.3x5