ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
TC6320TG-G-Cut
TC6320TG-G
1+1.35294
25+1.12078
100+1.0199
Increments of 1
Leadtime
2-3 weeks
Microchip TechnologyMOSFET N/P-CH 200V 8SOICCut Tape (CT)-ActiveN and P-ChannelStandard200V-7 Ohm @ 1A, 10V2V @ 1mA-110pF @ 25V--55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
FPF1C2P5BF07A
FPF1C2P5BF07A
1+67.451
10+64.0784
100+57.7549
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 5N-CH 650V 36A F1 MODULETray-Active5 N-Channel (Solar Inverter)Standard650V36A90 mOhm @ 27A, 10V3.8V @ 250µA--250W-40°C ~ 150°C (TJ)Chassis MountF1 ModuleF1
DMN3035LWN-7-Cut
DMN3035LWN-7
1+0.490196
10+0.423529
100+0.316471
500+0.248667
1000+0.192147
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 30V 5.5A 8VDFNCut Tape (CT)-Active2 N-Channel (Dual)Standard30V5.5A35 mOhm @ 4.8A, 10V2V @ 250µA9.9nC @ 10V399pF @ 15V770mW-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFNV-DFN3020-8
DMN3016LDN-7-Cut
DMN3016LDN-7
1+0.558824
10+0.477451
100+0.356275
500+0.279922
1000+0.216304
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 30V 7.3A 8VDFNCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate30V7.3A20 mOhm @ 11A, 10V2V @ 250µA25.1nC @ 10V1415pF @ 15V1.1W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFNV-DFN3030-8 (Type J)
DMN3035LWN-7
DMN3035LWN-7
3000+0.170088
6000+0.159118
15000+0.148147
30000+0.140461
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 30V 5.5A 8VDFNTape & Reel (TR)-Active2 N-Channel (Dual)Standard30V5.5A35 mOhm @ 4.8A, 10V2V @ 250µA9.9nC @ 10V399pF @ 15V770mW-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFNV-DFN3020-8
DMN3016LDN-7
DMN3016LDN-7
3000+0.191471
6000+0.179118
15000+0.166765
30000+0.158118
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 30V 7.3A 8VDFNTape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate30V7.3A20 mOhm @ 11A, 10V2V @ 250µA25.1nC @ 10V1415pF @ 15V1.1W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFNV-DFN3030-8 (Type J)
DMP4047SSD-13-Cut
DMP4047SSD-13
1+0.696078
10+0.612745
100+0.469412
500+0.371098
1000+0.296882
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2P-CH 40V 5.1A 8SOICCut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate40V5.1A45 mOhm @ 4.4A, 10V3V @ 250µA21.5nC @ 10V1154pF @ 20V1.3W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMC25D1UVT-13
DMC25D1UVT-13
10000+0.119118
Increments of 10000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 25V/12V TSOT26Tape & Reel (TR)-ActiveN and P-ChannelStandard25V, 12V500mA, 3.9A4 Ohm @ 400mA, 4.5V1.5V @ 250µA0.9nC @ 10V27.6pF @ 10V1.3W-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6TSOT-26
DMC25D0UVT-13
DMC25D0UVT-13
10000+0.119118
Increments of 10000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 25V/30V TSOT26Tape & Reel (TR)-ActiveN and P-ChannelStandard25V, 30V400mA, 3.2A4 Ohm @ 400mA, 4.5V1.5V @ 250µA0.7nC @ 8V26.2pF @ 10V1.2W-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6TSOT-26
DMP3036SSD-13-Cut
DMP3036SSD-13
1+0.794118
10+0.7
100+0.536471
500+0.424118
1000+0.339294
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2P-CH 30V 10.6A 8-SOCut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate30V10.6A20 mOhm @ 9A, 10V3V @ 250µA16.5nC @ 10V1931pF @ 15V1.2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMC4015SSD-13-Cut
DMC4015SSD-13
1+1.04902
10+0.938235
100+0.731569
500+0.604373
1000+0.477137
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 40V 8.6A/6.5A 8-SOCut Tape (CT)-ActiveN and P-ChannelLogic Level Gate40V8.6A, 6.2A15 mOhm @ 3A, 10V3V @ 250µA40nC @ 10V1810pF @ 20V1.2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMC3021LSDQ-13-Cut
DMC3021LSDQ-13
1+0.578431
10+0.510784
100+0.391667
500+0.309608
1000+0.247686
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 30V 8.5A/7A 8-SOCut Tape (CT)-ActiveN and P-ChannelLogic Level Gate30V8.5A, 7A21 mOhm @ 7A, 10V2.1V @ 250µA16.1nC @ 10V767pF @ 10V2.5W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMC25D1UVT-7-Cut
DMC25D1UVT-7
1+0.421569
10+0.357843
100+0.267157
500+0.209941
1000+0.162225
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 25V/12V TSOT26Cut Tape (CT)-ActiveN and P-ChannelStandard25V, 12V500mA, 3.9A4 Ohm @ 400mA, 4.5V1.5V @ 250µA0.9nC @ 10V27.6pF @ 10V1.3W-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6TSOT-26
DMC25D0UVT-7-Cut
DMC25D0UVT-7
1+0.421569
10+0.357843
100+0.267157
500+0.209941
1000+0.162225
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 25V/30V TSOT26Cut Tape (CT)-ActiveN and P-ChannelStandard25V, 30V400mA, 3.2A4 Ohm @ 400mA, 4.5V1.5V @ 250µA0.7nC @ 8V26.2pF @ 10V1.2W-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6TSOT-26
DMC25D1UVT-7
DMC25D1UVT-7
3000+0.143608
6000+0.134343
15000+0.125078
30000+0.118588
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 25V/12V TSOT26Tape & Reel (TR)-ActiveN and P-ChannelStandard25V, 12V500mA, 3.9A4 Ohm @ 400mA, 4.5V1.5V @ 250µA0.9nC @ 10V27.6pF @ 10V1.3W-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6TSOT-26
DMC25D0UVT-7
DMC25D0UVT-7
3000+0.143608
6000+0.134343
15000+0.125078
30000+0.118588
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 25V/30V TSOT26Tape & Reel (TR)-ActiveN and P-ChannelStandard25V, 30V400mA, 3.2A4 Ohm @ 400mA, 4.5V1.5V @ 250µA0.7nC @ 8V26.2pF @ 10V1.2W-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6TSOT-26
DMP3036SSD-13
DMP3036SSD-13
2500+0.298529
5000+0.277941
12500+0.267647
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2P-CH 30V 10.6A 8-SOTape & Reel (TR)-Active2 P-Channel (Dual)Logic Level Gate30V10.6A20 mOhm @ 9A, 10V3V @ 250µA16.5nC @ 10V1931pF @ 15V1.2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMC4015SSD-13
DMC4015SSD-13
2500+0.432353
5000+0.410735
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 40V 8.6A/6.5A 8-SOTape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate40V8.6A, 6.2A15 mOhm @ 3A, 10V3V @ 250µA40nC @ 10V1810pF @ 20V1.2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMC3021LSDQ-13
DMC3021LSDQ-13
2500+0.232961
5000+0.217931
12500+0.202902
25000+0.192373
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 30V 8.5A/7A 8-SOTape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate30V8.5A, 7A21 mOhm @ 7A, 10V2.1V @ 250µA16.1nC @ 10V767pF @ 10V2.5W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
CSD87501L
CSD87501L
3000+0.343137
Increments of 3000
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 30V 10PICOSTARTape & Reel (TR)NexFET™Active2 N-Channel (Dual) Common DrainLogic Level Gate---2.3V @ 250µA40nC @ 10V-2.5W-55°C ~ 150°C (TJ)Surface Mount10-XFBGA10-Picostar (3.37x1.47)
CSD87501LT-Cut
CSD87501LT
1+1.06863
10+0.958824
100+0.747843
Increments of 1
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 30V 10PICOSTARCut Tape (CT)NexFET™Active2 N-Channel (Dual) Common DrainLogic Level Gate---2.3V @ 250µA40nC @ 10V-2.5W-55°C ~ 150°C (TJ)Surface Mount10-XFBGA10-Picostar (3.37x1.47)
CSD87501LT
CSD87501LT
250+0.790196
1250+0.394608
Increments of 250
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 30V 10PICOSTARTape & Reel (TR)NexFET™Active2 N-Channel (Dual) Common DrainLogic Level Gate---2.3V @ 250µA40nC @ 10V-2.5W-55°C ~ 150°C (TJ)Surface Mount10-XFBGA10-Picostar (3.37x1.47)
CSD85301Q2
CSD85301Q2
3000+0.17402
Increments of 3000
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 20V 5A 6WSONTape & Reel (TR)NexFET™Active2 N-Channel (Dual)Logic Level Gate, 5V Drive20V5A27 mOhm @ 5A, 4.5V1.2V @ 250µA5.4nC @ 4.5V469pF @ 10V2.3W-55°C ~ 150°C (TJ)Surface Mount6-WDFN Exposed Pad6-WSON (2x2)
CSD85301Q2T-Cut
CSD85301Q2T
1+0.617647
10+0.546078
100+0.41902
500+0.331216
1000+0.264971
Increments of 1
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 20V 5A 6WSONCut Tape (CT)NexFET™Active2 N-Channel (Dual)Logic Level Gate, 5V Drive20V5A27 mOhm @ 5A, 4.5V1.2V @ 250µA5.4nC @ 4.5V469pF @ 10V2.3W-55°C ~ 150°C (TJ)Surface Mount6-WDFN Exposed Pad6-WSON (2x2)
CSD85301Q2T
CSD85301Q2T
250+0.401961
1250+0.20098
Increments of 250
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 20V 5A 6WSONTape & Reel (TR)NexFET™Active2 N-Channel (Dual)Logic Level Gate, 5V Drive20V5A27 mOhm @ 5A, 4.5V1.2V @ 250µA5.4nC @ 4.5V469pF @ 10V2.3W-55°C ~ 150°C (TJ)Surface Mount6-WDFN Exposed Pad6-WSON (2x2)