ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
AOC2806-Cut
AOC2806
1+0.676471
10+0.572549
25+0.501176
100+0.429412
250+0.372157
Increments of 1
Leadtime
2-3 weeks
Alpha & Omega Semiconductor Inc.MOSFET 2N-CH 20VCut Tape (CT)AlphaMOSActive2 N-Channel (Dual) Common DrainStandard----12.5nC @ 4.5V-700mW-55°C ~ 150°C (TJ)Surface Mount4-XDFN4-AlphaDFN (1.7x1.7)
AOC2804-Cut
AOC2804
1+0.617647
10+0.517647
25+0.452941
100+0.388039
250+0.336314
Increments of 1
Leadtime
2-3 weeks
Alpha & Omega Semiconductor Inc.MOSFET 2N-CH 20VCut Tape (CT)AlphaMOSActive2 N-Channel (Dual) Common DrainStandard----9.5nC @ 4.5V-700mW-55°C ~ 150°C (TJ)Surface Mount4-XFDFN4-AlphaDFN (1.57x1.57)
SQJ992EP-T1_GE3
SQJ992EP-T1_GE3
3000+0.50098
Increments of 3000
Leadtime
2-3 weeks
Vishay SiliconixMOSFET 2N-CH 60V 15A 8SOICTape & Reel (TR)Automotive, AEC-Q101, TrenchFET®Active2 N-Channel (Dual)Standard60V15A56.2 mOhm @ 3.7A, 10V2.5V @ 250µA12nC @ 10V446pF @ 30V34W-55°C ~ 175°C (TJ)Surface MountPowerPAK® SO-8 DualPowerPAK® SO-8 Dual
CSD87501L-Cut
CSD87501L
1+0.931373
10+0.834314
100+0.650294
500+0.537216
1000+0.424118
Increments of 1
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 30V 10PICOSTARCut Tape (CT)NexFET™Active2 N-Channel (Dual) Common DrainLogic Level Gate---2.3V @ 250µA40nC @ 10V-2.5W-55°C ~ 150°C (TJ)Surface Mount10-XFBGA10-Picostar (3.37x1.47)
CSD87384M-Cut
CSD87384M
1+1.69608
10+1.52843
100+1.22814
500+1.00904
1000+0.836069
Increments of 1
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 30V 30A 5PTABCut Tape (CT)NexFET™Active2 N-Channel (Half Bridge)Logic Level Gate30V30A7.7 mOhm @ 25A, 8V1.9V @ 250µA9.2nC @ 4.5V1150pF @ 15V8W-55°C ~ 150°C (TJ)Surface Mount5-LGA5-PTAB (5x3.5)
CSD87381P-Cut
CSD87381P
1+0.901961
10+0.806863
100+0.629412
500+0.519941
1000+0.41049
Increments of 1
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 30V 15A 5PTABCut Tape (CT)NexFET™Active2 N-Channel (Half Bridge)Logic Level Gate30V15A16.3 mOhm @ 8A, 8V1.9V @ 250µA5nC @ 4.5V564pF @ 15V4W-55°C ~ 150°C (TJ)Surface Mount5-LGA5-PTAB (3x2.5)
CSD85301Q2-Cut
CSD85301Q2
1+0.627451
10+0.537255
100+0.401471
500+0.315471
1000+0.243765
Increments of 1
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 20V 5A 6WSONCut Tape (CT)NexFET™Active2 N-Channel (Dual)Logic Level Gate, 5V Drive20V5A27 mOhm @ 5A, 4.5V1.2V @ 250µA5.4nC @ 4.5V469pF @ 10V2.3W-55°C ~ 150°C (TJ)Surface Mount6-WDFN Exposed Pad6-WSON (2x2)
CSD83325L-Cut
CSD83325L
1+0.637255
10+0.559804
100+0.429216
500+0.339294
1000+0.271431
Increments of 1
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2N-CH 12V 52A 6PICOSTARCut Tape (CT)NexFET™Active2 N-Channel (Dual) Common DrainStandard----10.9nC @ 4.5V-2.3W-55°C ~ 150°C (TJ)Surface Mount6-XFBGA6-PicoStar
CSD75207W15-Cut
CSD75207W15
1+0.686274
10+0.6
100+0.459902
500+0.363529
1000+0.290824
Increments of 1
Leadtime
2-3 weeks
Texas InstrumentsMOSFET 2P-CH 3.9A 9DSBGACut Tape (CT)NexFET™Active2 P-Channel (Dual)Logic Level Gate-3.9A162 mOhm @ 1A, 1.8V1.1V @ 250µA3.7nC @ 4.5V595pF @ 10V700mW-55°C ~ 150°C (TJ)Surface Mount9-UFBGA, DSBGA9-DSBGA
DMN61D8LVTQ-13
DMN61D8LVTQ-13
10000+0.141618
Increments of 10000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 60V 0.63A TSOT26Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate60V630mA1.8 Ohm @ 150mA, 5V2V @ 1mA0.74nC @ 5V12.9pF @ 12V820mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6TSOT-26
DMN61D8LVTQ-7-Cut
DMN61D8LVTQ-7
1+0.5
10+0.42549
100+0.317647
500+0.249588
1000+0.192863
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 60V 0.63A TSOT26Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate60V630mA1.8 Ohm @ 150mA, 5V2V @ 1mA0.74nC @ 5V12.9pF @ 12V820mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6TSOT-26
DMN61D8LVTQ-7
DMN61D8LVTQ-7
3000+0.170725
6000+0.159716
15000+0.148696
30000+0.14099
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 60V 0.63A TSOT26Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate60V630mA1.8 Ohm @ 150mA, 5V2V @ 1mA0.74nC @ 5V12.9pF @ 12V820mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6TSOT-26
DMG6602SVTQ-7-Cut
DMG6602SVTQ-7
1+0.372549
10+0.29902
100+0.203529
500+0.152686
1000+0.11451
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 30V TSOT26Cut Tape (CT)-ActiveN and P-ChannelLogic Level Gate30V3.4A, 2.8A60 mOhm @ 3.1A, 10V2.3V @ 250µA13nC @ 10V400pF @ 15V840mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6TSOT-26
DMG6602SVTQ-7
DMG6602SVTQ-7
3000+0.101912
6000+0.0957353
15000+0.0895588
30000+0.0821471
Increments of 3000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 30V TSOT26Tape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate30V3.4A, 2.8A60 mOhm @ 3.1A, 10V2.3V @ 250µA13nC @ 10V400pF @ 15V840mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6TSOT-26
STL40C30H3LL
STL40C30H3LL
3000+0.547647
6000+0.520265
Increments of 3000
Leadtime
2-3 weeks
STMicroelectronicsMOSFET N/P-CH 30V POWERFLATTape & Reel (TR)STripFET™ VIActiveN and P-ChannelLogic Level Gate30V40A, 30A21 mOhm @ 4A, 10V1V @ 250µA (Min)4.6nC @ 4.5V475pF @ 24V60W-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFNPowerFlat™ (5x6)
STL40C30H3LL-Cut
STL40C30H3LL
1+1.33333
10+1.18824
100+0.926667
500+0.765529
1000+0.604373
Increments of 1
Leadtime
2-3 weeks
STMicroelectronicsMOSFET N/P-CH 30V POWERFLATCut Tape (CT)STripFET™ VIActiveN and P-ChannelLogic Level Gate30V40A, 30A21 mOhm @ 4A, 10V1V @ 250µA (Min)4.6nC @ 4.5V475pF @ 24V60W-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFNPowerFlat™ (5x6)
AON6994
AON6994
3000+0.370382
6000+0.351863
Increments of 3000
Leadtime
2-3 weeks
Alpha & Omega Semiconductor Inc.MOSFET 2N-CH 30V 19A/26ATape & Reel (TR)-Active2 N-Channel (Dual) AsymmetricalLogic Level Gate30V19A, 26A5.2 mOhm @ 20A, 10V2.2V @ 250µA13nC @ 10V820pF @ 15V3.1W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-DFN-EP (5x6)
AON6992
AON6992
3000+0.409294
6000+0.388833
Increments of 3000
Leadtime
2-3 weeks
Alpha & Omega Semiconductor Inc.MOSFET 2N-CH 30V 19A/31ATape & Reel (TR)-Active2 N-Channel (Dual) AsymmetricalLogic Level Gate30V19A, 31A5.2 mOhm @ 20A, 10V2.2V @ 250µA13nC @ 10V820pF @ 15V3.1W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-DFN-EP (5x6)
AON3818
AON3818
3000+0.147402
Increments of 3000
Leadtime
2-3 weeks
Alpha & Omega Semiconductor Inc.MOSFET 2N-CH 24V 8ATape & Reel (TR)AlphaMOSActive2 N-Channel (Dual) Common DrainLogic Level Gate24V8A13.5 mOhm @ 8A, 4.5V1.2V @ 250µA15nC @ 4.5V840pF @ 12V2.7W-55°C ~ 150°C (TJ)Surface Mount8-SMD, Flat Lead8-DFN (2.9x2.3)
AON2812
AON2812
6000+0.112451
Increments of 6000
Leadtime
2-3 weeks
Alpha & Omega Semiconductor Inc.MOSFET 2N-CH 30V 4.5ATape & Reel (TR)AlphaMOSActive2 N-Channel (Dual)Logic Level Gate30V4.5A37 mOhm @ 2A, 10V1.4V @ 250µA10nC @ 10V235pF @ 15V2.5W-55°C ~ 150°C (TJ)Surface Mount6-UDFN Exposed Pad6-DFN-EP (2x2)
AOC2806
AOC2806
3000+0.215402
6000+0.20151
15000+0.187608
Increments of 3000
Leadtime
2-3 weeks
Alpha & Omega Semiconductor Inc.MOSFET 2N-CHTape & Reel (TR)AlphaMOSActive2 N-Channel (Dual) Common DrainStandard----12.5nC @ 4.5V-700mW-55°C ~ 150°C (TJ)Surface Mount4-XDFN4-AlphaDFN (1.7x1.7)
AOC2804
AOC2804
3000+0.194667
6000+0.182108
15000+0.169549
30000+0.160755
Increments of 3000
Leadtime
2-3 weeks
Alpha & Omega Semiconductor Inc.MOSFET 2N-CHTape & Reel (TR)AlphaMOSActive2 N-Channel (Dual) Common DrainStandard----9.5nC @ 4.5V-700mW-55°C ~ 150°C (TJ)Surface Mount4-XFDFN4-AlphaDFN (1.57x1.57)
AO4862
AO4862
6000+0.107892
Increments of 6000
Leadtime
2-3 weeks
Alpha & Omega Semiconductor Inc.MOSFET 2N-CH 30V 4.5ATape & Reel (TR)AlphaMOSActive2 N-Channel (Dual)Logic Level Gate30V4.5A50 mOhm @ 4.5A, 10V2.5V @ 250µA10nC @ 10V200pF @ 15V1.7W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
FDMD86100-Cut
FDMD86100
1+2.96078
10+2.65784
100+2.17775
500+1.8539
1000+1.56353
Increments of 1
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 100VCut Tape (CT)PowerTrench®Active2 N-Channel (Dual) Common SourceStandard100V10A10.5 mOhm @ 10A, 10V4V @ 250µA30nC @ 10V2060pF @ 50V2.2W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-Power 5x6
FDMD86100
FDMD86100
3000+1.44209
Increments of 3000
Leadtime
2-3 weeks
Fairchild/ON SemiconductorMOSFET 2N-CH 100VTape & Reel (TR)PowerTrench®Active2 N-Channel (Dual) Common SourceStandard100V10A10.5 mOhm @ 10A, 10V4V @ 250µA30nC @ 10V2060pF @ 50V2.2W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-Power 5x6