ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
DMN2050LFDB-7-Cut
DMN2050LFDB-7
1+0.401961
10+0.348039
100+0.259804
500+0.204118
1000+0.157725
Increments of 1
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET 2N-CH 20V 3.3A 6UDFNCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate20V3.3A45 mOhm @ 5A, 4.5V1V @ 250µA12nC @ 10V389pF @ 10V730mW-55°C ~ 150°C (TJ)Surface Mount6-UDFN Exposed PadU-DFN2020-6 (Type B)
DMC31D5UDJ-7B-Cut
DMC31D5UDJ-7B
1+0.421569
10+0.357843
100+0.267157
500+0.209941
1000+0.162225
Increments of 1
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET N/P-CH 30V SOT963Cut Tape (CT)-ActiveN and P-ChannelLogic Level Gate30V220mA, 200mA1.5 Ohm @ 100mA, 4.5V1V @ 250µA0.38nC @ 4.5V22.6pF @ 15V350mW-55°C ~ 150°C (TJ)Surface MountSOT-963SOT-963
2N7002VC-7-Cut
2N7002VC-7
1+0.401961
10+0.323529
100+0.220588
500+0.165412
1000+0.124059
Increments of 1
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET 2N-CH 60V 0.28A SOT-563Cut Tape (CT)-Active2 N-Channel (Dual)Standard60V280mA7.5 Ohm @ 50mA, 5V2.5V @ 250µA-50pF @ 25V150mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
DMP3098LSD-13-Cut
DMP3098LSD-13
1+0.686274
10+0.603922
100+0.462745
500+0.365804
1000+0.292647
Increments of 1
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET 2P-CH 30V 4.4A 8-SOICCut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate30V4.4A65 mOhm @ 5A, 10V2.1V @ 250µA7.8nC @ 10V336pF @ 25V1.8W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
DMN2050LFDB-13-Cut
DMN2050LFDB-13
1+0.401961
10+0.348039
100+0.259804
500+0.204118
1000+0.157725
Increments of 1
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET 2N-CH 20V 3.3A 6UDFNCut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate20V3.3A45 mOhm @ 5A, 4.5V1V @ 250µA12nC @ 10V389pF @ 10V730mW-55°C ~ 150°C (TJ)Surface Mount6-UDFN Exposed PadU-DFN2020-6 (Type B)
DMG9933USD-13-Cut
DMG9933USD-13
1+0.421569
10+0.357843
100+0.267157
500+0.209941
1000+0.162225
Increments of 1
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET 2P-CH 20V 4.6A 8SOCut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate20V4.6A75 mOhm @ 4.8A, 4.5V1.1V @ 250µA6.5nC @ 4.5V608.4pF @ 6V1.15W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMC3032LSD-13-Cut
DMC3032LSD-13
1+0.460784
10+0.398039
100+0.296863
500+0.233275
1000+0.180255
Increments of 1
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET N/P-CH 30V 8.1A/7A 8SOPCut Tape (CT)-ActiveN and P-ChannelLogic Level Gate30V8.1A, 7A32 mOhm @ 7A, 10V2.1V @ 250µA9.2nC @ 10V404.5pF @ 15V2.5W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
ZXMC4559DN8TC-Cut
ZXMC4559DN8TC
1+1.56863
10+1.4049
100+1.12922
500+0.927765
1000+0.768716
Increments of 1
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET N/P-CH 60V 3.6A/2.6A 8SOCut Tape (CT)-ActiveN and P-ChannelLogic Level Gate60V3.6A, 2.6A55 mOhm @ 4.5A, 10V1V @ 250µA (Min)20.4nC @ 10V1063pF @ 30V2.1W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
ZXMC3F31DN8TA-Cut
ZXMC3F31DN8TA
1+0.715686
10+0.629412
100+0.482843
Increments of 1
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET N/P-CH 30V 6.8A/4.9A 8SOCut Tape (CT)-ActiveN and P-ChannelLogic Level Gate, 4.5V Drive30V6.8A, 4.9A24 mOhm @ 7A, 10V3V @ 250µA12.9nC @ 10V608pF @ 15V1.8W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMN3190LDW-13-Cut
DMN3190LDW-13
1+0.460784
10+0.339216
100+0.192157
500+0.127235
1000+0.097549
Increments of 1
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET 2N-CH 30V 1A SOT363Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate30V1A190 mOhm @ 1.3A, 10V2.8V @ 250µA2nC @ 10V87pF @ 20V320mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
NTZD3154NT5G-Cut
NTZD3154NT5G
1+0.45098
10+0.333333
100+0.188725
500+0.12502
1000+0.0958431
Increments of 1
Leadtime
2-3 weeks		ON SemiconductorMOSFET 2N-CH 20V 0.54A SOT563Cut Tape (CT)-Active2 N-Channel (Dual)Standard20V540mA550 mOhm @ 540mA, 4.5V1V @ 250µA2.5nC @ 4.5V150pF @ 16V250mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563-6
NTMFD4901NFT1G-Cut
NTMFD4901NFT1G
1+1.22549
10+1.09314
100+0.852549
500+0.704294
Increments of 1
Leadtime
2-3 weeks		ON SemiconductorMOSFET 2N-CH 30V 8DFNCut Tape (CT)-Active2 N-Channel (Dual), SchottkyLogic Level Gate30V10.3A, 17.9A6.5 mOhm @ 10A, 10V2.2V @ 250µA9.7nC @ 4.5V1150pF @ 15V1.1W, 1.2W-55°C ~ 150°C (TJ)Surface Mount8-PowerTDFN8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
CMXDM7002A TR
CMXDM7002A TR
3000+0.140804
6000+0.132275
15000+0.123745
30000+0.1135
Increments of 3000
Leadtime
2-3 weeks		Central Semiconductor CorpMOSFET 2N-CH 60V 0.28A SOT26Tape & Reel (TR)-Active2 N-Channel (Dual)Standard60V280mA2 Ohm @ 500mA, 10V2.5V @ 250µA0.59nC @ 4.5V50pF @ 25V350mW-65°C ~ 150°C (TJ)Surface MountSOT-23-6SOT-26
CMRDM3575 TR
CMRDM3575 TR
8000+0.136775
16000+0.127951
24000+0.117363
Increments of 8000
Leadtime
2-3 weeks		Central Semiconductor CorpMOSFET N/P-CH 20V SOT963Tape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate20V160mA, 140mA3 Ohm @ 100mA, 4.5V1V @ 250µA0.46nC @ 4.5V9pF @ 15V125mW-65°C ~ 150°C (TJ)Surface MountSOT-963SOT-963
CMKDM8005 TR
CMKDM8005 TR
3000+0.223382
6000+0.208971
15000+0.194559
Increments of 3000
Leadtime
2-3 weeks		Central Semiconductor CorpMOSFET 2P-CH 20V 0.65A SOT363Tape & Reel (TR)-Active2 P-Channel (Dual)Logic Level Gate20V650mA360 mOhm @ 350mA, 4.5V1V @ 250µA1.2nC @ 4.5V100pF @ 16V350mW-65°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
CMXDM7002A TR-Cut
CMXDM7002A TR
1+0.539216
10+0.448039
25+0.378039
100+0.307647
250+0.254902
Increments of 1
Leadtime
2-3 weeks		Central Semiconductor CorpMOSFET 2N-CH 60V 0.28A SOT26Cut Tape (CT)-Active2 N-Channel (Dual)Standard60V280mA2 Ohm @ 500mA, 10V2.5V @ 250µA0.59nC @ 4.5V50pF @ 25V350mW-65°C ~ 150°C (TJ)Surface MountSOT-23-6SOT-26
CMRDM3575 TR-Cut
CMRDM3575 TR
1+0.558824
10+0.463725
25+0.39098
100+0.318137
250+0.263569
Increments of 1
Leadtime
2-3 weeks		Central Semiconductor CorpMOSFET N/P-CH 20V SOT963Cut Tape (CT)-ActiveN and P-ChannelLogic Level Gate20V160mA, 140mA3 Ohm @ 100mA, 4.5V1V @ 250µA0.46nC @ 4.5V9pF @ 15V125mW-65°C ~ 150°C (TJ)Surface MountSOT-963SOT-963
CMKDM8005 TR-Cut
CMKDM8005 TR
1+0.666667
10+0.594118
25+0.519608
100+0.445294
250+0.385961
Increments of 1
Leadtime
2-3 weeks		Central Semiconductor CorpMOSFET 2P-CH 20V 0.65A SOT363Cut Tape (CT)-Active2 P-Channel (Dual)Logic Level Gate20V650mA360 mOhm @ 350mA, 4.5V1V @ 250µA1.2nC @ 4.5V100pF @ 16V350mW-65°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
FDMD85100-Cut
FDMD85100
1+2.9902
10+2.68922
100+2.20343
500+1.87573
1000+1.58193
Increments of 1
Leadtime
2-3 weeks		Fairchild/ON SemiconductorMOSFET 2N-CH 100VCut Tape (CT)PowerTrench®Active2 N-Channel (Half Bridge)Standard100V10.4A9.9 mOhm @ 10.4A, 10V4V @ 250µA31nC @ 10V2230pF @ 50V2.2W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-Power 5x6
FDMD85100
FDMD85100
3000+1.45907
Increments of 3000
Leadtime
2-3 weeks		Fairchild/ON SemiconductorMOSFET 2N-CH 100VTape & Reel (TR)PowerTrench®Active2 N-Channel (Half Bridge)Standard100V10.4A9.9 mOhm @ 10.4A, 10V4V @ 250µA31nC @ 10V2230pF @ 50V2.2W-55°C ~ 150°C (TJ)Surface Mount8-PowerWDFN8-Power 5x6
SSM6N43FU,LF-Cut
SSM6N43FU,LF
1+0.529412
10+0.381373
25+0.296863
100+0.224804
250+0.159059
Increments of 1
Leadtime
2-3 weeks		Toshiba Semiconductor and StorageMOSFET 2N-CH 20V 0.5A US6Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate, 1.5V Drive20V500mA630 mOhm @ 200mA, 5V1V @ 1mA1.23nC @ 4V46pF @ 10V200mW150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363US6
SSM6N43FU,LF
SSM6N43FU,LF
3000+0.0823529
6000+0.0741176
15000+0.0658823
30000+0.0617647
75000+0.0547647
Increments of 3000
Leadtime
2-3 weeks		Toshiba Semiconductor and StorageMOSFET 2N-CH 20V 0.5A US6Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate, 1.5V Drive20V500mA630 mOhm @ 200mA, 5V1V @ 1mA1.23nC @ 4V46pF @ 10V200mW150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363US6
SQJ912AEP-T1_GE3
SQJ912AEP-T1_GE3
3000+0.484235
6000+0.46002
Increments of 3000
Leadtime
2-3 weeks		Vishay SiliconixMOSFET 2N-CH 40V 30A PPAK SO-8Tape & Reel (TR)Automotive, AEC-Q101, TrenchFET®Active2 N-Channel (Dual)Standard40V30A9.3 mOhm @ 9.7A, 10V2.5V @ 250µA38nC @ 10V1835pF @ 20V48W-55°C ~ 175°C (TJ)Surface MountPowerPAK® SO-8 DualPowerPAK® SO-8 Dual
DMN61D8LVT-7-Cut
DMN61D8LVT-7
1+0.490196
10+0.423529
100+0.316471
500+0.248667
1000+0.192147
Increments of 1
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET 2N-CH 60V 0.63A TSOT26Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate60V630mA1.8 Ohm @ 150mA, 5V2V @ 1mA0.74nC @ 5V12.9pF @ 12V820mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6TSOT-26
DMN61D8LVT-7
DMN61D8LVT-7
3000+0.170088
6000+0.159118
15000+0.148147
30000+0.140461
Increments of 3000
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET 2N-CH 60V 0.63A TSOT26Tape & Reel (TR)-Active2 N-Channel (Dual)Logic Level Gate60V630mA1.8 Ohm @ 150mA, 5V2V @ 1mA0.74nC @ 5V12.9pF @ 12V820mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6TSOT-26