ManufacturerPackagingSeriesPart StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
FET Feature
Drain to Source Voltage ...
Current - Continuous ...
Rds On (Max) @ Id, ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Power - Max
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
EFC6612R-TF
EFC6612R-TF
5000+0.342284
Increments of 5000
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2N-CH 20V 23A EFCPTape & Reel (TR)-Not For New Designs2 N-Channel (Dual) Common DrainLogic Level Gate, 2.5V Drive----27nC @ 4.5V-2.5W150°C (TJ)Surface Mount6-SMD, No Lead6-CSP (1.77x3.54)
EFC6611R-A-TF
EFC6611R-A-TF
5000+0.479196
Increments of 5000
Leadtime
2-3 weeks
ON SemiconductorMOSFET 2N-CH 12V 27A EFCPTape & Reel (TR)*Active----------Surface Mount6-SMD, No Lead6-CSP (1.77x3.54)
FW389-TL-2W
FW389-TL-2W
2500+0.391176
Increments of 2500
Leadtime
2-3 weeks
ON SemiconductorMOSFET N/P-CH 100V 2A 8SOICTape & Reel (TR)-ActiveN and P-ChannelLogic Level Gate, 4V Drive100V2A225 mOhm @ 2A, 10V-10nC @ 10V490pF @ 10V1.8W150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
STS5DNF60L-Cut
STS5DNF60L
1+1.53922
10+1.37941
100+1.07549
500+0.888412
1000+0.701382
Increments of 1
Leadtime
2-3 weeks
STMicroelectronicsMOSFET 2N-CH 60V 5A 8-SOICCut Tape (CT)STripFET™ IIActive2 N-Channel (Dual)Logic Level Gate60V5A45 mOhm @ 2A, 10V2.5V @ 250µA15nC @ 4.5V1030pF @ 25V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
EPC2108ENGRT-Cut
EPC2108ENGRT
1+1.94118
10+1.75196
25+1.56392
100+1.40755
250+1.25114
Increments of 1
Leadtime
2-3 weeks
EPCTRANS GAN 3N-CH BUMPED DIECut Tape (CT)eGaN®Active3 N-Channel (Half Bridge + Synchronous Bootstrap)GaNFET (Gallium Nitride)60V, 100V1.7A, 500mA190 mOhm @ 2.5A, 5V2.5V @ 200µA0.22nC @ 5V22pF @ 30V--40°C ~ 150°C (TJ)Surface MountDieDie
EPC2107ENGRT-Cut
EPC2107ENGRT
1+2.03922
10+1.8402
25+1.64353
100+1.47912
250+1.31478
Increments of 1
Leadtime
2-3 weeks
EPCTRANS GAN 3N-CH 100V BUMPED DIECut Tape (CT)eGaN®Active3 N-Channel (Half Bridge + Synchronous Bootstrap)GaNFET (Gallium Nitride)100V1.7A, 500mA320 mOhm @ 2A, 5V2.5V @ 100µA0.16nC @ 5V16pF @ 50V--40°C ~ 150°C (TJ)Surface MountDieDie
EPC2106ENGRT-Cut
EPC2106ENGRT
1+1.84314
10+1.66275
25+1.48431
100+1.33598
250+1.18753
Increments of 1
Leadtime
2-3 weeks
EPCTRANS GAN 2N-CH 100V BUMPED DIECut Tape (CT)eGaN®Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)100V1.7A70 mOhm @ 2A, 5V2.5V @ 600µA0.73nC @ 5V75pF @ 50V--40°C ~ 150°C (TJ)Surface MountDieDie
EPC2108ENGRT
EPC2108ENGRT
2500+0.819922
5000+0.789559
Increments of 2500
Leadtime
2-3 weeks
EPCTRANS GAN 3N-CH BUMPED DIETape & Reel (TR)eGaN®Active3 N-Channel (Half Bridge + Synchronous Bootstrap)GaNFET (Gallium Nitride)60V, 100V1.7A, 500mA190 mOhm @ 2.5A, 5V2.5V @ 200µA0.22nC @ 5V22pF @ 30V--40°C ~ 150°C (TJ)Surface MountDieDie
EPC2107ENGRT
EPC2107ENGRT
2500+0.861618
5000+0.829706
Increments of 2500
Leadtime
2-3 weeks
EPCTRANS GAN 3N-CH 100V BUMPED DIETape & Reel (TR)eGaN®Active3 N-Channel (Half Bridge + Synchronous Bootstrap)GaNFET (Gallium Nitride)100V1.7A, 500mA320 mOhm @ 2A, 5V2.5V @ 100µA0.16nC @ 5V16pF @ 50V--40°C ~ 150°C (TJ)Surface MountDieDie
EPC2106ENGRT
EPC2106ENGRT
2500+0.778235
5000+0.749412
Increments of 2500
Leadtime
2-3 weeks
EPCTRANS GAN 2N-CH 100V BUMPED DIETape & Reel (TR)eGaN®Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)100V1.7A70 mOhm @ 2A, 5V2.5V @ 600µA0.73nC @ 5V75pF @ 50V--40°C ~ 150°C (TJ)Surface MountDieDie
UPA2379T1P-E1-A-Cut
UPA2379T1P-E1-A
1+0.970588
10+0.853922
25+0.756078
100+0.658431
250+0.573098
Increments of 1
Leadtime
2-3 weeks
Renesas Electronics AmericaMOSFET 2N-CH 12VCut Tape (CT)-Active2 N-Channel (Dual) Common DrainLogic Level Gate, 2.5V Drive----20nC @ 4V-1.8W150°C (TJ)Surface Mount6-XFLGA6-EFLIP-LGA (2.17x1.47)
UPA2379T1P-E1-A
UPA2379T1P-E1-A
5000+0.319637
10000+0.307794
Increments of 5000
Leadtime
2-3 weeks
Renesas Electronics AmericaMOSFET 2N-CH 12VTape & Reel (TR)-Active2 N-Channel (Dual) Common DrainLogic Level Gate, 2.5V Drive----20nC @ 4V-1.8W150°C (TJ)Surface Mount6-XFLGA6-EFLIP-LGA (2.17x1.47)
DMP4050SSDQ-13-Cut
DMP4050SSDQ-13
1+1.40196
10+1.25098
100+0.97549
500+0.805824
1000+0.636176
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2P-CH 40V 4A 8SOCut Tape (CT)-Active2 P-Channel (Dual)Standard40V4A50 mOhm @ 6A, 10V3V @ 250µA13.9nC @ 10V674pF @ 20V1.25W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMP4050SSDQ-13
DMP4050SSDQ-13
2500+0.576471
5000+0.547647
Increments of 2500
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2P-CH 40V 4A 8SOTape & Reel (TR)-Active2 P-Channel (Dual)Standard40V4A50 mOhm @ 6A, 10V3V @ 250µA13.9nC @ 10V674pF @ 20V1.25W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
DMP2200UDW-13
DMP2200UDW-13
10000+0.0564706
Increments of 10000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2P-CH 20V 0.9A SOT363Tape & Reel (TR)-Active2 P-Channel (Dual)Standard20V900mA260 mOhm @ 880mA, 4.5V1.2V @ 250µA2.1nC @ 4.5V184pF @ 10V450mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
DMP2060UFDB-13
DMP2060UFDB-13
10000+0.267647
Increments of 10000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2P-CH 20V 3.2A 6UDFNTape & Reel (TR)-Active2 P-Channel (Dual)Standard20V3.2A90 mOhm @ 2.9A, 4.5V1.4V @ 250µA18nC @ 8V881pF @ 10V1.4W-55°C ~ 150°C (TJ)Surface Mount6-UDFN Exposed PadU-DFN2020-6 (Type B)
DMP1046UFDB-13
DMP1046UFDB-13
10000+0.106618
Increments of 10000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2P-CH 12V 3.8A 6UDFNTape & Reel (TR)-Active2 P-Channel (Dual)Standard12V3.8A61 mOhm @ 3.6A, 4.5V1V @ 250µA17.9nC @ 8V915pF @ 6V1.4W-55°C ~ 150°C (TJ)Surface Mount6-UDFN Exposed PadU-DFN2020-6 (Type B)
DMN32D4SDW-13
DMN32D4SDW-13
10000+0.0627451
Increments of 10000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 30V 0.65A SOT363Tape & Reel (TR)-Active2 N-Channel (Dual)Standard30V650mA400 mOhm @ 250mA, 10V1.6V @ 250µA1.3nC @ 10V50pF @ 15V290mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
DMN2041UFDB-13
DMN2041UFDB-13
10000+0.267647
Increments of 10000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 20V 4.7A 6UDFNTape & Reel (TR)-Active2 N-Channel (Dual)Standard20V4.7A40 mOhm @ 4.2A, 4.5V1.4V @ 250µA15nC @ 8V713pF @ 10V1.4W-55°C ~ 150°C (TJ)Surface Mount6-UDFN Exposed PadU-DFN2020-6
DMN1029UFDB-13
DMN1029UFDB-13
10000+0.106618
Increments of 10000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 12V 5.6A 6UDFNTape & Reel (TR)-Active2 N-Channel (Dual)Standard12V5.6A29 mOhm @ 5A, 4.5V1V @ 250µA19.6nC @ 8V914pF @ 6V1.4W-55°C ~ 150°C (TJ)Surface Mount6-UDFN Exposed PadU-DFN2020-6 (Type B)
DMC3400SDW-13
DMC3400SDW-13
10000+0.0564706
Increments of 10000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 30V SOT363Tape & Reel (TR)-ActiveN and P-ChannelStandard30V650mA, 450mA400 mOhm @ 590mA, 10V1.6V @ 250µA1.4nC @ 10V55pF @ 15V310mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SOT-363
DMC2041UFDB-13
DMC2041UFDB-13
10000+0.267647
Increments of 10000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 20V 6UDFNTape & Reel (TR)-ActiveN and P-ChannelStandard20V4.7A, 3.2A40 mOhm @ 4.2A, 4.5V1.4V @ 250µA15nC @ 8V713pF @ 10V1.4W-55°C ~ 150°C (TJ)Surface Mount6-UDFN Exposed PadU-DFN2020-6 (Type B)
DMC1029UFDB-13
DMC1029UFDB-13
10000+0.254902
Increments of 10000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 12V 6UDFNTape & Reel (TR)-ActiveN and P-ChannelStandard12V5.6A, 3.8A29 mOhm @ 5A, 4.5V1V @ 250µA19.6nC @ 8V914pF @ 6V1.4W-55°C ~ 150°C (TJ)Surface Mount6-UDFN Exposed PadU-DFN2020-6 (Type B)
DMC1028UFDB-13
DMC1028UFDB-13
10000+0.254902
Increments of 10000
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET N/P-CH 12V/20V 6UDFNTape & Reel (TR)-ActiveN and P-ChannelStandard12V, 20V6A, 3.4A25 mOhm @ 5.2A, 4.5V1V @ 250µA18.5nC @ 8V787pF @ 6V1.36W-55°C ~ 150°C (TJ)Surface Mount6-UDFN Exposed PadU-DFN2020-6 (Type B)
DMN61D8LVT-13-Cut
DMN61D8LVT-13
1+0.490196
10+0.423529
100+0.316471
500+0.248667
1000+0.192147
Increments of 1
Leadtime
2-3 weeks
Diodes IncorporatedMOSFET 2N-CH 60V 0.63A TSOT26Cut Tape (CT)-Active2 N-Channel (Dual)Logic Level Gate60V630mA1.8 Ohm @ 150mA, 5V2V @ 1mA0.74nC @ 5V12.9pF @ 12V820mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6 Thin, TSOT-23-6TSOT-26