ManufacturerPackagingSeriesPart StatusDiode TypeTechnologyVoltage - Peak Reverse (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfCurrent - Reverse Leakage @ VrOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
Diode Type
Technology
Voltage - Peak Reverse ...
Current - Average ...
Voltage - Forward ...
Current - Reverse ...
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
G2SBA80-E3/51
G2SBA80-E3/51
1600+0.416765
Increments of 1600
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE GPP 1.5A 800V GBLBulk-ActiveSingle PhaseStandard800V1.5A1V @ 750mA5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLGBL
G2SBA60L-E3/51
G2SBA60L-E3/51
1600+0.416765
Increments of 1600
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE GPP 1.5A 600V GBLBulk-ActiveSingle PhaseStandard600V1.5A1V @ 750mA5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLGBL
G2SBA60-E3/51
G2SBA60-E3/51
1600+0.416765
Increments of 1600
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE GPP 1.5A 600V GBLBulk-ActiveSingle PhaseStandard600V1.5A1V @ 750mA5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLGBL
G2SBA20-E3/51
G2SBA20-E3/51
1600+0.416765
Increments of 1600
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE GPP 1.5A 200V GBLBulk-ActiveSingle PhaseStandard200V1.5A1V @ 750mA5µA @ 200V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLGBL
G2SB80-E3/51
G2SB80-E3/51
1200+0.444265
Increments of 1200
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE GPP 1.5A 800V GBLBulk-ActiveSingle PhaseStandard800V1.5A1V @ 750mA50µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLGBL
G2SB60-E3/51
G2SB60-E3/51
1200+0.444265
Increments of 1200
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE GPP 1.5A 600V GBLBulk-ActiveSingle PhaseStandard600V1.5A1V @ 750mA5µA @ 200V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLGBL
G2SB20-E3/51
G2SB20-E3/51
1200+0.6375
Increments of 1200
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE GPP 1.5A 200V GBLBulk-ActiveSingle PhaseStandard200V1.5A1V @ 750mA5µA @ 200V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBLGBL
B80C800G-E4/51
B80C800G-E4/51
3000+0.167157
Increments of 3000
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 0.9A 125V WOGBulk-ActiveSingle PhaseStandard125V900mA1V @ 900mA10µA @ 125V-40°C ~ 125°C (TJ)Through Hole4-Circular, WOGWOG
B80C1500G-E4/51
B80C1500G-E4/51
1+0.637255
10+0.559804
25+0.52549
100+0.428824
250+0.398353
Increments of 1
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 1.5A 125V WOGBulk-ActiveSingle PhaseStandard125V1.5A1V @ 1A10µA @ 125V-40°C ~ 125°C (TJ)Through Hole4-Circular, WOGWOG
B80C1000G-E4/51
B80C1000G-E4/51
1+0.470588
10+0.404902
25+0.377647
100+0.301961
250+0.280392
Increments of 1
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 1A 125V WOGBulk-ActiveSingle PhaseStandard125V1A1V @ 1A10µA @ 125V-40°C ~ 125°C (TJ)Through Hole4-Circular, WOGWOG
B40C800G-E4/51
B40C800G-E4/51
1+0.470588
10+0.404902
25+0.377647
100+0.301961
250+0.280392
Increments of 1
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 0.9A 65V WOGBulk-ActiveSingle PhaseStandard65V900mA1V @ 900mA10µA @ 65V-40°C ~ 125°C (TJ)Through Hole4-Circular, WOGWOG
B40C1500G-E4/51
B40C1500G-E4/51
3000+0.245794
Increments of 3000
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 1.5A 65V WOGBulk-ActiveSingle PhaseStandard65V1.5A1V @ 1.5A10µA @ 65V-40°C ~ 125°C (TJ)Through Hole4-Circular, WOGWOG
B40C1000G-E4/51
B40C1000G-E4/51
3000+0.167157
Increments of 3000
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 1A 65V WOGBulk-ActiveSingle PhaseStandard65V1A1V @ 1A10µA @ 65V-40°C ~ 125°C (TJ)Through Hole4-Circular, WOGWOG
B380C800G-E4/51
B380C800G-E4/51
3000+0.167157
Increments of 3000
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 0.9A 600V WOGBulk-ActiveSingle PhaseStandard600V900mA1V @ 900mA10µA @ 600V-40°C ~ 125°C (TJ)Through Hole4-Circular, WOGWOG
B380C1500G-E4/51
B380C1500G-E4/51
1+0.637255
10+0.559804
25+0.52549
100+0.428824
250+0.398353
Increments of 1
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 1.5A 600V WOGBulk-ActiveSingle PhaseStandard600V1.5A1V @ 1.5A10µA @ 600V-40°C ~ 125°C (TJ)Through Hole4-Circular, WOGWOG
B380C1000G-E4/51
B380C1000G-E4/51
3000+0.167157
Increments of 3000
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 1A 600V WOGBulk-ActiveSingle PhaseStandard600V1A1V @ 1A10µA @ 600V-40°C ~ 125°C (TJ)Through Hole4-Circular, WOGWOG
B250C800G-E4/51
B250C800G-E4/51
1+0.470588
10+0.404902
25+0.377647
100+0.301961
250+0.280392
Increments of 1
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 0.9A 400V WOGBulk-ActiveSingle PhaseStandard400V900mA1V @ 900mA10µA @ 400V-40°C ~ 125°C (TJ)Through Hole4-Circular, WOGWOG
B250C1500G-E4/51
B250C1500G-E4/51
1+0.637255
10+0.559804
25+0.52549
100+0.428824
250+0.398353
Increments of 1
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 1.5A 400V WOGBulk-ActiveSingle PhaseStandard400V1.5A1V @ 1.5A10µA @ 400V-40°C ~ 125°C (TJ)Through Hole4-Circular, WOGWOG
B250C1000G-E4/51
B250C1000G-E4/51
1+0.470588
10+0.404902
25+0.377647
100+0.301961
250+0.280392
Increments of 1
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 1A 400V WOGBulk-ActiveSingle PhaseStandard400V1A1V @ 1A10µA @ 400V-40°C ~ 125°C (TJ)Through Hole4-Circular, WOGWOG
B125C800G-E4/51
B125C800G-E4/51
3000+0.245794
Increments of 3000
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 0.9A 200V WOGBulk-ActiveSingle PhaseStandard200V900mA1V @ 900mA10µA @ 200V-40°C ~ 125°C (TJ)Through Hole4-Circular, WOGWOG
B125C1500G-E4/51
B125C1500G-E4/51
1+0.637255
10+0.559804
25+0.52549
100+0.428824
250+0.398353
Increments of 1
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 1.5A 200V WOGBulk-ActiveSingle PhaseStandard200V1.5A1V @ 1.5A10µA @ 125V-40°C ~ 125°C (TJ)Through Hole4-Circular, WOGWOG
B125C1000G-E4/51
B125C1000G-E4/51
3000+0.245794
Increments of 3000
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 1A 200V WOGBulk-ActiveSingle PhaseStandard200V1A1V @ 1A10µA @ 200V-40°C ~ 125°C (TJ)Through Hole4-Circular, WOGWOG
3KBP08M-E4/51
3KBP08M-E4/51
1800+0.351216
Increments of 1800
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 3A 800V KBPMTray-ActiveSingle PhaseStandard800V3A1.05V @ 3A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, KBPMKBPM
3KBP06M-E4/51
3KBP06M-E4/51
1+0.823529
10+0.72451
25+0.680392
100+0.555392
250+0.515843
Increments of 1
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 3A 600V KBPMTray-ActiveSingle PhaseStandard600V3A1.05V @ 3A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-SIP, KBPMKBPM
3KBP04M-E4/51
3KBP04M-E4/51
1+0.823529
10+0.72451
25+0.680392
100+0.555392
250+0.515843
Increments of 1
Leadtime
2-3 weeks		Vishay Semiconductor Diodes DivisionDIODE BRIDGE 3A 400V KBPMTray-ActiveSingle PhaseStandard400V3A1.05V @ 3A5µA @ 400V-55°C ~ 150°C (TJ)Through Hole4-SIP, KBPMKBPM